Ecolab USA Inc.

Cabot Microelectronics Corporation

Cmc Materials, Inc.

Kim Long

Michael A Kamrath

Steven Grumbine

William J Ward

Kevin P Dockery

Ji Cui

Sean McCue

Roman A Ivanov

David P Workman

Pankaj K Singh

Alexander W Hains

Brian T Holland

Benjamin Petro

Francois Batllo

Sascha Welz

Matthew Carnes

Michael Romba

John M Krasniewski

Galyna Krylova

Brian Sneed

A chemical mechanical polishing composition includes a liquid carrier and colloidal silica particles dispersed in the liquid carrier. The colloidal silica particles have a positive charge of at least 10 mV in the liquid carrier and may be characterized as having: (i) a number average aspect ratio of greater than about 1.25 and (ii) a normalized particle size span by weight of greater than about 0.42. The polishing composition may further optionally include an iron-containing accelerator and a tungsten etch inhibitor, for example, when the polishing composition is a tungsten CMP composition.

CMP composition including a novel abrasive

The invention provides a chemical-mechanical polishing composition comprising a) surface-modified colloidal silica particles, comprising a negatively-charged group on the surface of the particles, wherein the surface-modified colloidal silica particles have a negative charge, a particle size of about 90 nm to about 350 nm, and a zeta potential of about &#x2212;5 mV to about &#x2212;35 mV at a pH of about 3, b) an iron compound, c) a stabilizing agent, d) a corrosion inhibitor, and e) an aqueous carrier. The invention also provides a method suitable for polishing a substrate.

Tungsten buff polishing compositions with improved topography

A method of preparing a particulate material comprising the steps of adding silicic acid solution, optionally doped with aluminum, optionally added to a slurry of pre-existing nanoparticles at a neutral to slightly acidic pH of no more than seven, and at a temperature of about 20&#xb0; to 30&#xb0; C. This yields a polysilicate particulate dispersion. Then, the pH of the dispersion is raised to greater than seven, to stabilize/reinforce particles of the particulate dispersion. Optionally, the particles may be dried, and have increased porosity and surface area.

Production and use of polysilicate particulate materials

Described herein are compositions, kits and methods for polishing sapphire surfaces using compositions having colloidal aluminosilicate particles in an aqueous acidic solution. In some aspects, the methods for polishing a sapphire surface may include abrading a sapphire surface with a rotating polishing pad and a polishing composition. The polishing composition may include an amount of a colloidal aluminosilicate and may have a pH of about 2.0 to about 7.0.

Methods of polishing sapphire surfaces

Kits for polishing sapphire surfaces are disclosed. The kits have compositions including colloidal silica and the colloidal silica has a broad particle size distribution. The kits also include a polishing pad. The polishing pad may include polyurethane impregnated with polyester and it may have a compressibility of about 1% to about 40% and a Shore D hardness of about 50 to about 60.

Kit for polishing sapphire surfaces

Described herein are methods for polishing sapphire surfaces using compositions comprising colloidal silica, wherein the colloidal silica has a broad particle size distribution.

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Naperville, IL, United States of America

Kim Long