Samsung Electronics Co., Ltd.

Ki-Yeon Park

Bon-Young Koo

Yong-Suk Tak

Sung-Hyun Choi

Seung-Hwan Lee

Gi-Gwan Park

Tae-Jong Lee

Young-sun Kim

Han-Mei Choi

Kyoung-Ryul Yoon

Sung-Tae Kim

Jae-hyoung Choi

In-Sung Park

Jae-Hyun Yeo

Vladimir Urazaev

Jin-Ha Jeong

Dae-Sik Choi

Won-Oh Seo

Jong-Cheol Lee

Ki-Vin Im

Cha-young Yoo

Jin-bum Kim

Gyeom Kim

Youn-soo Kim

Cha-Young Yoo

Yun-Jung Lee

Se-hoon Oh

Hyun-Jun Sim

Sun-jung Kim

Eun-Seok Hong

Seo-Young Park

Gi-Vin Im

Hyun-seung Kim

Jeong-Hoo Kim

Mi-seon Park

Young-Sun Jo

Chun-hyung Chung

A method of fabricating a semiconductor device may include forming a fin structure on a substrate; forming an interface film having a first thickness on the fin structure using a first process; forming a gate dielectric film having a second thickness on the interface film using a second process different from the first process; and densifying the gate dielectric film using a third process different from the first and second processes. The second thickness may be greater than the first thickness, and the first thickness of the interface film may be unchanged after the densifying of the gate dielectric film.

Methods of fabricating semiconductor devices

A semiconductor device includes an active fin on a substrate, a gate structure on the active fin, a gate spacer structure on a sidewall of the gate structure, and a source/drain layer on at least a portion of the active fin adjacent the gate spacer structure. The gate spacer structure includes a wet etch stop pattern, an oxygen-containing silicon pattern, and an outgas sing prevention pattern sequentially stacked.

Semiconductor devices and methods of manufacturing the same

A material layer, a semiconductor device including the material layer, and methods of forming the material layer and the semiconductor device are provided herein. A method of forming a SiOCN material layer may include supplying a silicon source onto a substrate, supplying a carbon source onto the substrate, supplying an oxygen source onto the substrate, supplying a nitrogen source onto the substrate, and supplying hydrogen onto the substrate. When a material layer is formed according to a method of the present inventive concepts, a material layer having a high tolerance to wet etching and/or good electric characteristics may be formed, and may even be formed when the method is performed at a low temperature.

Material layers, semiconductor devices including the same, and methods of fabricating material layers and semiconductor devices

A method of forming a SiOCN material layer, a material layer stack, a semiconductor device, a method of fabricating a semiconductor device, and a deposition apparatus, the method of forming a SiOCN material layer including providing a substrate; providing a silicon precursor onto the substrate; providing an oxygen reactant onto the substrate; providing a first carbon precursor onto the substrate; providing a second carbon precursor onto the substrate; and providing a nitrogen reactant onto the substrate, wherein the first carbon precursor and the second carbon precursor are different materials.

Methods of fabricating a SiOCN layer using a first and second carbon precursor, the first carbon precursor being different from the second carbon precursor

An integrated circuit device includes a fin type active area protruding from a substrate and having an upper surface at a first level; a nanosheet extending in parallel to the upper surface of the fin type active area and comprising a channel area, the nanosheet being located at a second level spaced apart from the upper surface of the fin type active area; a gate disposed on the fin type active area and surrounding at least a part of the nanosheet, the gate extending in a direction crossing the fin type active area; a gate dielectric layer disposed between the nanosheet and the gate; a source and drain region formed on the fin type active area and connected to one end of the nanosheet; a first insulating spacer on the nanosheet, the first insulating spacer covering sidewalls of the gate; and a second insulating spacer disposed between the gate and the source and drain region in a space between the upper surface of the fin type active area and the nanosheet, the second insulating spacer having a multilayer structure.

Integrated circuit device and method of manufacturing the same

A semiconductor device includes an active fin on a substrate, a gate structure on the active fin, a gate spacer structure on a sidewall of the gate structure, and a source/drain layer on at least a portion of the active fin adjacent the gate spacer structure. The gate spacer structure includes a wet etch stop pattern, an oxygen-containing silicon pattern, and an outgassing prevention pattern sequentially stacked.

A device includes: a gate line on an active region of a substrate, a pair of source/drain regions in the active region on both sides of the gate line, a contact plug on at least one source/drain region out of the pair of source/drain regions; and a multilayer-structured insulating spacer between the gate line and the contact plug. The multilayer-structured insulating spacer may include an oxide layer, a first carbon-containing insulating layer covering a first surface of the oxide layer adjacent to the gate line, and a second carbon-containing insulating layer covering a second surface of the oxide layer, opposite to the first surface of the oxide layer, adjacent to the contact plug.

Integrated circuit device and method of fabricating the same

Provided are semiconductor devices and methods of fabricating the same. The methods may include forming a molding layer on a semiconductor substrate. A storage electrode passing through the molding layer is formed. A part of the storage electrode is exposed by partially etching the molding layer. A sacrificial oxide layer is formed by oxidizing the exposed part of the storage electrode. The partially-etched molding layer and the sacrificial oxide layer are removed. A capacitor dielectric layer is formed on the substrate of which the molding layer and the sacrificial oxide layer are removed. A plate electrode is formed on the capacitor dielectric layers.

Semiconductor devices and methods of fabricating the same

A semiconductor device includes a substrate including an active fin structure, a plurality of gate structures, a first spacer on sidewalls of each of the gate structures, and a second spacer on sidewalls of the first spacer. The active fin structure may extend in a first direction and including a plurality of active fins with adjacent active fins divided by a recess. Each of the plurality of gate structures may extend in a second direction crossing the first direction, and may cover the active fins. The first spacer may include silicon oxycarbonitride (SiOCN), and may have a first carbon concentration. The second spacer may include SiOCN and may have a second carbon concentration which is different from the first carbon concentration. The semiconductor device may have a low parasitic capacitance and good electrical characteristics.

A method and an apparatus perform Mobile High-definition Link (MHL) signal filtering. The method of performing the Mobile High-definition Link (MHL) signal filtering in a terminal includes determining whether a transmission device for MHL signal transmission is connected; determining whether a call continues when the transmission device is connected; and determining whether to perform the MHL signal filtering in the terminal based on whether the call continues. Accordingly, there is an advantage of improving picture quality of an image output from a multimedia device by effectively removing a common mode noise even when an RF weak electric field is formed due to call generation.

Method and apparatus for filtering a mobile high-definition link signal

An electronic device includes a lower layer, a complex dielectric layer on the lower layer, and an upper layer on the complex dielectric layer. The complex dielectric layer includes an amorphous metal silicate layer and a crystalline metal-based insulating layer thereon. Related fabrication methods are also discussed.

Integrated circuit devices including complex dielectric layers and related fabrication methods

Methods of forming a metal silicate layer and methods of fabricating a semiconductor device including the metal silicate layer are provided, the methods of forming the metal silicate layer include forming the metal silicate using a plurality of silicon precursors. The silicon precursors are homoleptic silicon precursors in which ligands bound to silicon have the same molecular structure.

Methods of forming a metal silicate layer and methods of fabricating a semiconductor device including the metal silicate layer

Growing community of inventors

Hwaseong-si, South Korea

Ki-Yeon Park