Samsung Electronics Co., Ltd.

Ki-Ho Yang

Sibo Cai

Seung-Hune Yang

Chang-Hwan Kim

Jun-Young Jang

Sung-Soo Suh

In a method of designing a mask, a first mask including an active region, a gate structure, and a gate tap partially overlapping the active region and the gate structure is designed. The first mask is changed so that a portion of the gate tap is extended. An OPC is performed on the changed first mask to design a second mask.

Method of designing a mask and method of manufacturing a semiconductor device using the same

In a method of calculating a shift value of a cell contact, a reference region and a correction region may be set on an image of an actual cell block. The cell block may include a plurality of actual cell contacts formed using a mask. Each of preliminary shift values of the actual cell contacts with respect to target cell contacts in a target cell block to be formed using the mask may be measured based on the image. The preliminary shift values of the actual cell contacts in the reference region may be minimized. Actual shift values of the actual cell contacts in the correction region with respect to the minimized preliminary shift values may be calculated. Thus, the mask may be corrected using the accurately measured shift values so that the cell contacts may have designed positions.

Method of calculating a shift value of a cell contact

Method of calculating a shift vale of a cell contact

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Hwaseong-si, South Korea

Ki-Ho Yang