Applied Materials, Inc.

Ultratech, Inc.

Khiem K Nguyen

Michael N Grimbergen

Richard Lewington

Ajay Kumar

Madhavi R Chandrachood

Sheeba J Panayil

Ibrahim M Ibrahim

Alfred W Mak

Peter Satitpunwaycha

Darin Bivens

Andrew M Hawryluk

Warren W Flack

Robert L Hsieh

Saravjeet Singh

Amitabh Sabharwal

Scott Alan Anderson

Corey Collard

Embodiments include wafer and photomask processing equipment. An etch processing system including an endpoint detection system having a light source and a photodetector is described. In an example, the light source emits light toward an alignment region over a substrate support member of an etch chamber, and the photodetector receives a reflection of the light from the alignment region. The reflection is monitored for endpoint and process control. A second light source emits light toward the alignment region, and a camera receives the light to image the alignment region. The image can be used to align the light emitted by the endpoint detection system to a spot location within the alignment region, e.g., within an alignment opening of a substrate mounted on the substrate support member.

Etch processing system having reflective endpoint detection

Exemplary lithography mask processing chambers may include a substrate support that includes a plurality of lift pins that are vertically translatable relative to a top surface of the substrate support. The lithography mask processing chambers may include a cover ring positioned atop the substrate support. The cover ring may define a rectilinear substrate seat. A top surface of the rectilinear substrate seat may be elevated above the top surface of the substrate support. An outer periphery of the rectilinear substrate seat may be positioned outward of the plurality of lift pins.

Direct lift cathode for lithography mask chamber

Embodiments of lift pin holders are disclosed herein. In some embodiments, a lift pin holder includes a housing member having an upper portion and a lower portion, wherein the upper portion includes an annular wall defining a central space; a support member disposed at least partially within the central space and having a base and an upwardly protruding portion configured to support a lift pin; a first gripper disposed atop the support member and having a first plurality of prongs protruding upward from a body of the first gripper and configured to grip the lift pin; and a second gripper disposed atop the base of the support member and having a second plurality of prongs protruding upward from a body of the second gripper and are configured to grip the lift pin, wherein the first gripper is disposed within the third central opening.

Lift pin holder

A plasma reactor has an array of plural gas injectors arranged around a circular side wall that are individually controlled.

Plasma reactor having an array of plural individually controlled gas injectors arranged along a circular side wall

The present disclosure provides a substrate support assembly includes a substrate pedestal having an upper surface for receiving and supporting a substrate, a cover plate disposed on the substrate support pedestal, and two or more lift pins movably disposed through the substrate support pedestal and the cover plate. The cover plate includes a disk body having a central opening. The two or more lift pins are self supportive. Each of the two or more lift pins comprises one or more contact pads, and the contact pads of the lift pins extend into to the central opening of the cover plate to receive and support a substrate at an edge region of the substrate.

Direct lift process apparatus

A plasma reactor has an array of passages extending through its workpiece support pedestal from a bottom thereof that forms a two-dimensional array of openings in the support surface. The reactor further includes a plurality of optical fibers, each fiber extending through a respective one of the passages. Optical sensing apparatus is coupled to the output ends of the optical fibers and is responsive in the range of wavelengths. The reactor further includes a tunable element capable of changing a two-dimensional etch rate distribution across the surface of a workpiece supported on the pedestal, and a process controller connected to receive information from the optical sensing apparatus and to transmit control commands to the tunable element.

Mask etch plasma reactor having an array of optical sensors viewing the workpiece backside and a tunable element controlled in response to the optical sensors

An alignment system for aligning a wafer when lithographically fabricating LEDs having an LED wavelength &#x3bb;is disclosed. The system includes the wafer. The wafer has a roughened alignment mark with a root-mean-square (RMS) surface roughness &#x3c3;. The system has a lens configured to superimpose an image of the reticle alignment mark with an image of the roughened alignment mark. The roughened alignment marked image is formed with alignment light having a wavelength &#x3bb;that is in the range from about 2&#x3c3;to about 8&#x3c3;. An image sensor detects the superimposed image. An image processing unit processes the detected superimposed image to measure an alignment offset between the wafer and the reticle.

Optical alignment systems for forming LEDs having a rough surface

A method of aligning a wafer when lithographically fabricating a light-emitting diode (LED). The method includes forming on the wafer at least one roughened alignment mark having a root-mean-square (RMS) surface roughness &#x3c3;. The roughened alignment mark is formed as a consequence of forming a plasma etch to roughen a LED surface on which the wafer alignment mark resides. The method also includes imaging the at least one roughened wafer alignment mark with alignment light having a wavelength &#x3bb;that is in the range from about 2&#x3c3;to about 8&#x3c3;. The method also includes comparing the detected image to an alignment reference to establish wafer alignment. Once wafer alignment is established, p-contacts and n-contacts can be formed on the LED upper surface in their proper locations.

Optical alignment methods for forming LEDs having a rough surface

A plasma etch method includes simultaneously illuminating an array of plural locations on front surface of the workpiece through the backside of the workpiece with light of a wavelength range for which the workpiece is transparent, while viewing light reflected from the array of plural locations to the backside of the workpiece. The method further includes determining plural etch depths at the array of locations from the light reflected from the array of locations on the front side of the workpiece, and deducing from the plural etch depths a spatial distribution of etch rate across the array of locations. The method also includes changing the etch rate distribution by adjusting a tunable element of the reactor.

Plasma mask etch method of controlling a reactor tunable element in accordance with the output of an array of optical sensors viewing the mask backside

A method is provided for defining a pattern on a workpiece such as a transparent substrate or mask or a workpiece that is at least transparent within a range of optical wavelengths. The method includes defining a photoresist pattern on the top surface of the mask, the pattern including a periodic structure having a periodic spacing between elements of the structure. The method further includes placing the mask on a support pedestal in a plasma reactor chamber and generating a plasma in the chamber to etch the top surface of the mask through openings in the photoresist pattern. The method also includes transmitting light through the pedestal and through the bottom surface of the mask, while viewing through the support pedestal light reflected from the periodic structure and detecting an interference pattern in the reflected light. The method further includes determining from the interference pattern a depth to which periodic structure has been etched in the top surface.

Process for etching a transparent workpiece including backside endpoint detection steps

A plasma reactor for etching a workpiece such as a rectangular or square mask, includes a vacuum chamber having a ceiling and a sidewall and a workpiece support pedestal within the chamber including a cathode having a surface for supporting a workpiece, the surface comprising plural respective zones, the respective zones of the surface being formed of respective materials of different electrical characteristics. The zones can be arranged concentrically relative to an axis of symmetry of the wafer support pedestal.

Mask etch plasma reactor with cathode providing a uniform distribution of etch rate

A plasma reactor for processing a workpiece such as a mask or wafer includes a vacuum chamber having a cylindrical side wall, a ceiling overlying the side wall and a ring supported on a top edge of the side wall and supporting the ceiling, the ring comprising an external surface and an interior surface. An RF plasma source power applicator and an RF source power generator coupled to the applicator furnish plasma source power. Plural passages extend in a radial direction through the ring from the external surface to the interior surface and are spaced apart along a circumference of the ring. A process gas supply furnishes process gas. An external gas flow conduit apparatus outside of the chamber extends around a circumference of the chamber and is coupled to the process gas supply. Plural external gas flow valves outside of the chamber are coupled to the external conduit at respective locations spaced apart along the conduit, each of the valves having: (a) a controlled gas output port coupled to a respective one of the plural passages at the external surface of the ring and (b) a valve control input. A gas valve configuration controller controls the valve control input of each of the valves.

Mask etch plasma reactor with variable process gas distribution

A plasma reactor is provided for processing a workpiece such as a transparent mask or a semiconductor wafer. The reactor includes a vacuum chamber having a ceiling and a sidewall. A workpiece support pedestal within the chamber includes a metal cathode having a support surface facing the ceiling and defining a support plane for supporting a workpiece. The cathode has a hollow space formed within its interior. The reactor further includes a movable metal element within the hollow space and a mechanism for controlling a distance between the metal element and the support plane.

Plasma reactor for processing a workpiece and having a tunable cathode

Method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system are provided. In one aspect, an apparatus is provided for supporting a substrate comprising a cover ring comprising a base having a bore disposed therethough, the base having an upper surface and one or more raised surfaces disposed adjacent the bore, wherein the raised surface comprise one or more first substrate support members disposed adjacent an edge of the bore and a capture ring disposed on the cover ring, the capture ring comprising a semi-circular annular ring having an inner perimeter corresponding to the bore of the cover ring and one or more second substrate support members disposed on the inner perimeter and adapted to receive a substrate, wherein the capture ring is adapted to mate with the cover ring and form one contiguous raised surface on the cover ring.

Growing community of inventors

San Jose, CA, United States of America

Khiem K Nguyen