Semiconductor Manufacturing International (shanghai) Corporation

Ultra Clean Holdings, Inc.

Kevin Shi

Phil Wu

Simon Wang

Silver Xi

Jason Chang

Gethin Mao

Victor Luo

Jaya Chandran

A method for sensing a leak in a unit under test includes scanning a SKU on a unit under test, sending the SKU information to a compute, connecting the unit under test to a testing apparatus, removing gas from an interior volume of the unit under test, monitoring the vacuum pressure within the interior volume of the unit under test until the vacuum pressure reaches a test pressure, initiating delivery of helium to the exterior of the unit under test through a helium gun by pulling a trigger on the helium gun to dispense helium therefrom, positioning the helium supply gun so that helium is released over a weld of the unit under test, detecting the movement speed of the helium supply gun during the dispensing of helium therefrom, and displaying the helium content internal to the unit under test on a graphical user interface.

Leak detection

A method of selectively etching a semiconductor device and manufacturing a BSI image sensor device includes etching a doped silicon substrate with an HNA solution for a predetermined time duration to obtain an etching solution having a concentration Cof nitrite ions, etching the semiconductor device using the obtained etching solution. Etching the semiconductor device requires an initial concentration Cof nitride ions that is lower than C. The HNA solution comprises a hydrofluoric acid (HF), a nitric acid (HNO), and a acetic acid (CHCOOH). The BSI image sensor device will have a uniform thickness when etched using the thus obtained etching solution.

Method for semiconductor selective etching and BSI image sensor

Growing community of inventors

Shanghai, China

Kevin Shi