Advanced Micro Devices Corporation

Globalfoundries Inc.

Kevin R Lensing

James Broc Stirton

Marilyn I Wright

Richard J Markle

Steven P Reeves

Homi E Nariman

J Broc Stirton

Christopher Allen Bode

Rohit Pal

Alok Vaid

Michael G McIntyre

Matthew S Ryskoski

Siddharth Chauhan

Elfido Coss, Jr

Matthew A Purdy

David E Brown

Richard P Good

Eric Omar Green

Michael Alan Retersdorf

Ernest Dean Adams, Iii

Hormuzdiar E Nariman

Rajesh Vijayaraghavan

Douglas C Kimbrough

A method for monitoring a photolithography system includes defining a model of the photolithography system for modeling top and bottom critical dimension data associated with features formed by the photolithography system as a function of dose and focus. A library of model inversions is generated for different combinations of top and bottom critical dimension values. Each entry in the library specifies a dose value and a focus value associated with a particular combination of top and bottom critical dimension values. A top critical dimension measurement and a bottom critical dimension measurement of a feature formed by the photolithography system using a commanded dose parameter and a commanded focus parameter are received. The library is accessed using the top and bottom critical dimension measurements to generate values for a received dose parameter and the received focus parameter. The received dose and focus parameters are compared to the commanded dose and focus parameters to characterize the photolithography system.

Method and apparatus for extracting dose and focus from critical dimension data

A method includes receiving a first set of parameters associated with a subset of a plurality of die on a wafer. A die health metric is determined for at least a portion of the plurality of die based on the first set of parameters. The die health metric includes at least one process component associated with the fabrication of the die and at least one performance component associated with an electrical performance characteristic of the die. At least one of the die is tested. A protocol of the testing is determined based on the associated die health metric.

Determining die test protocols based on process health

A method includes determining at least a first characteristic of a device during a first test insertion and storing the first characteristic. The device is identified during a second test insertion. The first characteristic is retrieved responsive to the identification of the device. A test program for the second insertion is configured based on the first characteristic. The configured test program is executed to test the device during the second test insertion.

Method and apparatus for employing previous test insertion results for testing a device

A method includes defining a reference model of a system having a plurality of terms for modeling data associated with the system. A reference fit error metric is generated for the reference model. A set of evaluation models each having one term different than the reference model is generated. An evaluation fit error metric for each of the evaluation models is generated. The reference model is replaced with a selected evaluation model responsive to the selected evaluation model having an evaluation fit error metric less than the reference fit error metric. The model evaluation is repeated until no evaluation model has an evaluation fit error metric less than the reference fit error metric. The reference model is trained using the data associated with the system, and the trained reference model is employed to determine at least one characteristic of the system.

Method and apparatus for optimizing models for extracting dose and focus from critical dimension

A method that includes forming a gate of a semiconductor device on a substrate and forming a recess for an embedded silicon-straining material in source and drain regions for the gate. In this method, a proximity value, which is defined as a distance between the gate and a closest edge of the recess, is controlled by controlling formation of an oxide layer provided beneath the gate. The method can also include feedforward control of process steps in the formation of the recess based upon values measured during the formation of the recess. The method can also apply feedback control to adjust a subsequent recess formation process performed on a subsequent semiconductor device based on the comparison between a measured proximity value and a target proximity value to decrease a difference between a proximity value of the subsequent semiconductor device and the target proximity value.

Method of controlling embedded material/gate proximity

A method includes defining a hierarchy of test routines in a test program for testing integrated circuit devices. A first device is tested at a first screening level in the hierarchy. The first device is tested at a second detailed level in the hierarchy responsive to the first device failing the testing at the first screening level.

Method and apparatus for implementing scaled device tests

A method includes acquiring metrology data associated with a process. Bias information associated with the process is determined. The metrology data is adjusted based on the bias information to generate bias-adjusted metrology data. The bias-adjusted metrology data is filtered to identify and reject outlier data. The process is controlled based on the metrology data remaining after the rejection of the outlier data.

Method and apparatus for compensating metrology data for site bias prior to filtering

A method includes collecting trace data associated with a plurality of device testers. Tester health metrics are generated for each of the device testers. The tester health metrics are analyzed to identify a selected tester health metric that diverges from the plurality of tester health metrics. A corrective action is initiated for the tester associated with the selected tester health metric. A method includes collecting trace data associated with a plurality of device testers. The trace data for each of the device testers is compared to a reference trace data set to generate tester health metrics for each of the device testers based on the difference therebetween. The tester health metrics are analyzed to identify a selected tester health metric that diverges from the plurality of tester health metrics. A corrective action is initiated for the tester associated with the selected tester health metric.

Method and apparatus for matching test equipment calibration

Methods are provided for calibrating a process for growing an epitaxial silicon-comprising film and for growing an epitaxial silicon-comprising film. One method comprises epitaxially growing a first silicon-comprising film on a first silicon substrate that has an adjacent non-crystalline-silicon structure that extends from said first silicon substrate. The step of epitaxially growing uses hydrochloric acid provided at a first hydrochloric acid flow rate for a first time period. A morphology of the first film relevant to the adjacent non-crystalline-silicon structure is analyzed and a thickness of the first film is measured. The first flow rate is adjusted to a second flow rate based on the morphology of the first film. The first time period is adjusted to a second time period based on the second flow rate and the thickness. A second silicon-comprising film on a second silicon substrate is epitaxially grown for the second time period using the second flow rate.

Methods for calibrating a process for growing an epitaxial silicon film and methods for growing an epitaxial silicon film

The present invention provides a method and apparatus for integrating multiple sample plans. The method includes receiving a first wafer state data set from an in situ wafer measurement device, the first wafer state data set being indicative of at least one characteristic of at least one wafer processed by a processing tool and receiving a second wafer state data set from an ex situ wafer measurement device, the second wafer state data set being indicative of the at least one characteristic of the at least one wafer processed by the processing tool. The method also includes forming a third wafer state data set using the first and second wafer state data sets and determining the at least one characteristic of the at least one wafer based upon the third wafer state data set.

Method and apparatus for integrating multiple sample plans

The present invention provides a method and apparatus for dynamic adjustment of sensor and/or metrology sensitivities. The method includes accessing measurement information provided by a first measurement device and modifying a sensitivity of a second measurement device based on the measurement information provided by the first measurement device.

Method and apparatus for dynamic adjustment of sensor and/or metrology sensitivities

The present invention provides a method and apparatus for determining a root cause of a fault. The method includes detecting at least one fault associated with at least one first wafer processed according to a first processing context and processing at least one second wafer according to at least one second processing context. The second processing context is different than the first processing context. The method also includes determining a root cause associated with the fault based on the first processed wafer and the second processed wafer.

Method and apparatus for determining a root cause of a statistical process control failure

The present invention provides a method and apparatus for comparing device and non-device structures. The method includes determining at least one characteristic parameter associated with at least one non-device structure on at least one workpiece and determining at least one characteristic parameter associated with at least one device structure on the at least one workpiece. The method also includes comparing the at least one characteristic parameter associated with the at least one non-device structure and the at least one characteristic parameter associated with at least one device structure.

Method and apparatus for comparing device and non-device structures

The present invention provides a method and apparatus for classifying faults. The method includes accessing wafer state data associated with at least one wafer processed by at least one processing tool and sensor tool trace data associated with the at least one processing tool and determining that at least one fault occurred based upon at least one of the wafer state data and the sensor tool trace data. The method also includes selecting, in response to determining that the at least one fault occurred, a subset of a plurality of faults based upon at least one of the wafer state data and the sensor tool trace data and selecting at least one fault from the subset of the plurality of faults based upon at least one of the wafer state data and the sensor tool trace data.

Method and apparatus for classifying faults based on wafer state data and sensor tool trace data

A test structure includes a first plurality of lines and a second plurality of lines intersecting the first plurality of lines. The first and second pluralities of lines defining a grid having openings. A method for determining grid dimensions includes providing a wafer having a test structure comprising a plurality of intersecting lines that define a grid having openings; illuminating at least a portion of the grid with a light source; measuring light reflected from the illuminated portion of the grid to generate a reflection profile; and determining a dimension of the grid based on the reflection profile. A metrology tool is adapted to receive a wafer having a test structure comprising a plurality of intersecting lines that define a grid having openings. The metrology tool includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the grid. The detector is adapted to measure light reflected from the illuminated portion of the grid to generate a reflection profile. The data processing unit is adapted to determine a dimension of the grid based on the reflection profile.

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Austin, TX, United States of America

Kevin R Lensing