Cabot Microelectronics Corporation

Eastman-kodak Company

Cmc Materials, Inc.

Cmc Marerials LLC

Kevin P Dockery

Helin Huang

Allan Francis Sowinski

Roman A Ivanov

Renhe Jia

Na Zhang

Deepak Shukla

David T Southby

Steven Grumbine

Jared B Mooberry

Jeffrey Dysard

Lin Fu

David Hoke

Tina C Li

Pankaj K Singh

Kim Long

Sudeep Pallikkara Kuttiatoor

Hwei-Ling Yau

Charles E Romano, Jr

David M Teegarden

Barbara Boland Lussier

Kurt DeLance Sieber

Tiecheng A Qiao

Ji Cui

Jerome Robert Lenhard

Christopher T Brown

Steven M Bonser

James J Seifert

James Russell Matz

Glenn Whitener

Chang-Kyu Kim

Zheng Zhi Wu

Alexander W Hains

Benjamin Petro

Mihaela L Madaras

Hung-Tsung Huang

Hsin-Yen Wu

Matthew Carnes

Eric L Boyle

Brian J Antalek

Chih-Hsien Chien

Prativa Pandey

Kathleen M Yahn

Tyler Carter

Yang-Yao Lee

Chi-Rung Shie

Jessica VanKuiken

Zhao Liu

Charles Hamilton

Brian Sneed

Galyna Krylova

Susan Power

Amanda R Broska

David Bailey

Jessica Vankuiken

A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, abrasive particles dispersed in the liquid carrier, an iron containing accelerator, and a cationic polymer having an amino acid monomer. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above-described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

Composition for tungsten CMP

A chemical mechanical polishing composition comprises, consists of, or consists essentially of a liquid carrier, anionic particles dispersed in the liquid carrier, an anionic polymer or surfactant, and a cationic polymer.

CMP composition including an anionic abrasive

A chemical mechanical polishing composition includes a liquid carrier and colloidal silica particles dispersed in the liquid carrier. The colloidal silica particles have a positive charge of at least 10 mV in the liquid carrier and may be characterized as having: (i) a number average aspect ratio of greater than about 1.25 and (ii) a normalized particle size span by weight of greater than about 0.42. The polishing composition may further optionally include an iron-containing accelerator and a tungsten etch inhibitor, for example, when the polishing composition is a tungsten CMP composition.

CMP composition including a novel abrasive

A composition comprises, consists of, or consists essentially of a polymer including a derivatized amino acid monomer unit. A chemical mechanical polishing composition includes a water based liquid carrier, abrasive particles dispersed in the liquid carrier, and a cationic polymer having a derivatized amino acid monomer unit. A method of chemical mechanical polishing includes utilizing the chemical mechanical polishing composition to remove at least a portion of a metal or dielectric layer from a substrate and thereby polish the substrate.

Derivatized polyamino acids

The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive selected from the group consisting of alumina, ceria, titania, zirconia, and combinations thereof, wherein the abrasive is surface-coated with a copolymer comprising a combination of sulfonic acid monomeric units and carboxylic acid monomeric units a combination of sulfonic acid monomeric units and phosphonic acid monomeric units, (b) an oxidizing agent, and (c) water, wherein the polishing composition has a pH of about 2 to about 5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises tungsten or cobalt and silicon oxide.

Surface treated abrasive particles for tungsten buff applications

A chemical mechanical polishing composition includes a water based liquid carrier, cationic abrasive particles dispersed in the liquid carrier, a first amino acid compound having an isoelectric point of less than 7 and a second amino acid compound having an isoelectric point of greater than 7. The pH of the composition is in a range from about 1 to about 5. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

The invention provides a chemical-mechanical polishing composition comprising a) surface-modified colloidal silica particles, comprising a negatively-charged group on the surface of the particles, wherein the surface-modified colloidal silica particles have a negative charge, a particle size of about 90 nm to about 350 nm, and a zeta potential of about &#x2212;5 mV to about &#x2212;35 mV at a pH of about 3, b) an iron compound, c) a stabilizing agent, d) a corrosion inhibitor, and e) an aqueous carrier. The invention also provides a method suitable for polishing a substrate.

Tungsten buff polishing compositions with improved topography

The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, a polyhydroxy aromatic carboxylic acid, an ionic polymer of formula I: wherein Xand X, Zand Z, R, R, R, and R, and n are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.

CMP compositions selective for oxide and nitride with improved dishing and pattern selectivity

Described are compositions (e.g., slurries) useful in methods for chemical-mechanical processing (e.g. polishing or planarizing) a surface of a substrate that contains tungsten, the slurries containing abrasive particles, metal cation catalyst, phosphorus-containing zwitterionic compound, and optional ingredients such as oxidizer; also described are methods and substrates used or processed on combination with the compositions.

Tungsten processing slurry with catalyst

Described are chemical-mechanical polishing compositions (e.g., slurries) and methods of using the slurries for chemical-mechanical polishing (or planarizing) a surface of a substrate that contains tungsten, the compositions containing cationic surfactant and cyclodextrin.

Tungsten-processing slurry with cationic surfactant and cyclodextrin

Described are chemical mechanical polishing compositions and methods of using the compositions for planarizing a surface of a substrate that contains tungsten, the compositions containing silica abrasive particles and cationic surfactant.

Tungsten-processing slurry with cationic surfactant

The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, an ionic polymer of formula I: 

CMP compositions exhibiting reduced dishing in STI wafer polishing

The invention provides a chemical-mechanical polishing composition containing a ceria abrasive and a polymer of formula I: wherein Xand X, Yand Y, Zand Z, R, R, R, and R, and m are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.

CMP compositions selective for oxide over polysilicon and nitride with high removal rate and low defectivity

The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, an ionic polymer of formula I: wherein Xand X, Zand Z, R, R, and R, and n are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.

CMP compositions selective for oxide and nitride with high removal rate and low defectivity

An aqueous inkjet printing fluid composition for use in an inkjet printer including a silicon-based material which contacts the aqueous printing fluid composition, having in a concentration sufficient to inhibit corrosion of the silicon-based material when contacted by the aqueous printing fluid composition a soluble metal ligand complex of Formula (I): 

Aqueous inkjet printing fluid compositions

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Aurora, IL, United States of America

Kevin P Dockery