International Business Machines Corporation

Kevin Michael Welsh

Wayne Martin Moreau

James Thomas Fahey

Robert Lavin Wood

Gary T Spinillo

Ratnam Sooriyakumaran

Christopher F Lyons

Robert R Dichiara

Willard E Conley

Leo L Linehan

Brian Wayne Herbst

Pamela E Jones

Ratnasabapathy Sooriyakumaran

Robert David Allen

William R Brunsvold

William D Hinsberg, Iii

Christopher John Knors

Melvin W Montgomery

Jr Conley

A co-polymer of benzophenone and bisphenol A has been shown to have DUV absorption properties. Therefore, the co-polymer has particular utility as an antireflective coating in microlithography applications. Incorporating anthracene into the co-polymer backbone enhances absorption at 248 nm. The endcapper used for the co-polymer can vary widely depending on the needs of the user and can be selected to promote adhesion, stability, and absorption of different wavelengths.

Antireflective coating for microlithography

Microlithographic methods for the use of improved underlayers for chemically amplified deep UV photoresist compositions and structures produced thereby are disclosed. The compositions comprise, in admixture, a polymeric binder, and an azide which is thermolyzed during microlithographic processing to form an amine. Films formed from the underlayer compositions of the present invention, when applied immediately under and proximate to a chemically amplified photoresist film reduce the resist structure sidewall foot or undercut caused by an adverse contact reaction.

Making of microlithographic structures with an underlayer film

Microlithographic structure with an underlayer film containing a

Method for patterning a photoresist material wherein an anti-reflective

Microlithographic structure with an underlayer film comprising a

An antireflective coating composition for use with chemically amplified photoresist compositions comprising a polymer composition which is highly absorbent to mid and deep UV radiation, which is substantially inert to contact reactions with a chemically amplified photoresist composition, and which is insoluble in the developer for the chemically amplified photoresist composition.

Mid and deep-UV antireflection coatings and methods for use thereof

An antireflective coating composition (ARC) for use with chemically amplified photoresist compositions comprising a polymer composition which is highly absorbent to mid and deep UV radiation, which is substantially inert to contact reactions with a chemically amplified photoresist composition, and which is insoluble in the developer for the chemically amplified photoresist composition.

Mid and deep-uv antireflection coatings and methods for use thereof

The present invention relates to a radiation-sensitive resist composition and the process for its use in the manufacture of integrated circuits. The composition comprises a radiation-sensitive acid generator, a binder soluble in aqueous base and an acrylate copolymer having acid labile pendant groups.

Radiation-sensitive resist composition and process for its use

Acid sensitized photoresists with enhanced photospeed are provided. The photoresist compositions include a polymer binder and/or a polymerizable compound and an acid sensitive group which enables patterning of the resist composition, and acid generating photoinitiator, and an hydroxy aromatic compound which enhances the speed of the resist composition under imaging radiation.

Speed enhancers for acid sensitized resists

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Hennepin County, MN, United States of America

Kevin Michael Welsh