Globalfoundries Inc.

Kevin J Ryan

Ruilong Xie

Hui Zang

Laertis Economikos

Cornelius Brown Peethala

Frank Wilhelm Mont

Shariq Siddiqui

The disclosure relates to methods of forming integrated circuit (IC) structures with a metal cap on a cobalt layer for source and drain regions of a transistor. An integrated circuit (IC) structure according to the disclosure may include: a semiconductor fin on a substrate; a gate structure over the substrate, the gate structure having a first portion extending transversely across the semiconductor fin; an insulator cap positioned on the gate structure above the semiconductor fin; a cobalt (Co) layer on the semiconductor fin adjacent to the gate structure, wherein an upper surface of the Co layer is below an upper surface of the gate structure; and a metal cap on the Co layer.

IC structure with metal cap on cobalt layer and methods of forming same

Aspects of the present disclosure provide a method of cleaning a semiconductor device. The method includes providing a semiconductor wafer having an exposed cobalt surface and rinsing the exposed cobalt surface with cathode water having a pH greater than 9 and an oxidation reduction potential of less than 0.0.

Method of cleaning semiconductor device

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Albany, NY, United States of America

Kevin J Ryan