Cabot Microelectronics Corporation

Nalco Chemical Company

Dow Corning Corporation

Dow Silicones Corporation

Kevin J Moeggenborg

John E Hoots

Peter E Reed

Isaac K Cherian

Phillip W Carter

Vlasta A Brusic

Jeffrey P Chamberlain

Christopher P Howland

Jin-Shan Wang

Jiansheng Tang

John David Morris

David Schroeder

Kristy M Bailey

Mark Jon Loboda

William J Ward

Francesco De Rege Thesauro

David P Workman

Homer Z Chou

Christopher Parfeniuk

Darren Hansen

David W Boldridge

Victor Torres

Clinton Whiteley

Joseph D Hawkins

Stephan Mueller

Jeffrey Quast

Steven Grumbine

Michael L White

Vlasta Brusic Kaufman

Paul M Feeney

Martin R Godfrey

Renjie Zhou

Karen R Tubergen

Jeffrey Gilliland

Lamon Jones

James E Whitten

Narasimha M Rao

Stephen A Matchett

Ian Manning

Ming-Shih Tsai

Benjamin P Bayer

Fred Sun

John Clark

Michael James Fehr

Douglas G Kelley

Stanley Lesiak

Daniel Mateja

Nevin Naguib Sant

Joseph C Alfano

Francesco M De Rege

Jeffrey P Rasimas

Mukesh Desai

Dimitry Dinega

Susan Wilson

Dmitry Dinega

Michael White

David J Schroeder

Isaac Cherian

A method for producing silicon carbide substrates fit for epitaxial growth in a standard epitaxial chamber normally used for silicon wafers processing. Strict limitations are placed on any substrate that is to be processed in a chamber normally used for silicon substrates, so as to avoid contamination of the silicon wafers. To take full advantage of standard silicon processing equipment, the SiC substrates are of diameter of at least 150 mm. For proper growth of the SiC boule, the growth crucible is made to have interior volume that is six to twelve times the final growth volume of the boule. Also, the interior volume of the crucible is made to have height to width ratio of 0.8 to 4.0. Strict limits are placed on contamination, particles, and defects in each substrate.

Method for manufacturing SiC wafer fit for integration with power device manufacturing technology

The present invention provides a chemical mechanical polishing method for polishing a substrate comprising silicon dioxide, silicon nitride, and polysilicon. The method comprises abrading a surface of the substrate with a CMP composition to remove at least some silicon dioxide, silicon nitride and polysilicon therefrom. The CMP composition comprising a particulate ceria abrasive suspended in an aqueous carrier having a pH of about 3 to 9.5 and containing a cationic polymer; wherein the cationic polymer consists of a quaternary methacryloyloxyalkylammonium polymer.

Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials

The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a silicon nitride-containing substrate while suppressing polysilicon removal from the substrate. The composition comprises abrasive particles suspended in an acidic aqueous carrier containing a surfactant comprising an alkyne-diol, an alkyne diol ethoxylate, or a combination thereof. Methods of polishing a semiconductor substrate therewith are also disclosed.

CMP compositions and methods for suppressing polysilicon removal rates

The invention provides a composition for slicing a substrate using a wire saw wherein the composition comprises a liquid carrier and an abrasive. The invention further provides methods of slicing a substrate using a wire saw and a composition.

Composition for improving dryness during wire sawing

The invention is directed to a method of polishing a surface of an object that includes aluminum. The method includes the step of contacting the surface of the object with a soft polishing pad and a polishing composition. The polishing composition includes abrasive particles, an agent that oxidizes aluminum, and a liquid carrier to polish the surface of the object. The polishing composition includes the abrasive particles suspended in the liquid carrier, and is applied at a pH above about 7.

Polishing slurry for aluminum and aluminum alloys

The invention provides methods of polishing a noble metal-containing substrate with one of two chemical-mechanical polishing compositions. The first chemical-mechanical polishing composition comprises (a) an abrasive comprising &#x3b1;-alumina, (b) about 0.05 to about 50 mmol/kg of ions of calcium, strontium, barium, or mixtures thereof, and (c) a liquid carrier comprising water. The second chemical-mechanical polishing composition comprises (a) an abrasive selected from the group consisting of &#x3b1;-alumina, &#x3b3;-alumina, &#x3b4;-alumina, &#x3b8;-alumina, diamond, boron carbide, silicon carbide, tungsten carbide, titanium nitride, and mixtures thereof, (b) about 0.05 to about 3.5 mmol/kg of ions of calcium, strontium, barium, magnesium, zinc, or mixtures thereof, and (c) a liquid carrier comprising water.

Chemical-mechanical polishing composition and method for using the same

The inventive method comprises chemically-mechanically polishing a substrate comprising at least one layer of silicon carbide with a polishing composition comprising a liquid carrier, an abrasive, and an oxidizing agent.

Silicon carbide polishing method utilizing water-soluble oxidizers

The invention provides a chemical-mechanical polishing composition comprising: (a) silica particles, (b) about 5&#xd7;10to about 10 millimoles per kilogram of at least one alkaline earth metal selected from the group consisting of calcium, strontium, barium, and mixtures thereof, based on the total weight of the polishing composition, (c) about 0.1 to about 15 wt. % of an oxidizing agent, and (d) a liquid carrier comprising water. The invention also provides a polishing composition, which optionally comprises an oxidizing agent, comprising about 5&#xd7;10to about 10 millimoles per kilogram of at least one alkaline earth metal selected from the group consisting of calcium, strontium, and mixtures thereof. The invention further provides methods for polishing a substrate using the aforementioned polishing compositions.

The invention provides a chemical-mechanical polishing composition comprising: (a) fumed silica particles, (b) about 5&#xd7;10to about 10 millimoles per kilogram of at least one alkaline earth metal selected from the group consisting of calcium, strontium, barium, and mixtures thereof, based on the total weight of the polishing composition, (c) about 0.1 to about 15 wt. % of an oxidizing agent, and (d) a liquid carrier comprising water. The invention also provides a polishing composition, which optionally comprises an oxidizing agent, comprising about 5&#xd7;10to about 10 millimoles per kilogram of at least one alkaline earth metal selected from the group consisting of calcium, strontium, and mixtures thereof. The invention further provides methods for polishing a substrate using the aforementioned polishing compositions.

The invention provides chemical-mechanical polishing systems, and methods of polishing a substrate using the polishing systems, comprising (a) an abrasive, (b) a liquid carrier, and (c) a positively charged polyelectrolyte with a molecular weight of about 15,000 or more, wherein the abrasive comprises particles that are electrostatically associated with the positively charged polyelectrolyte.

Anionic abrasive particles treated with positively charged polyelectrolytes for CMP

The invention provides a polishing system and method of its use comprising (a) a liquid carrier, (b) a polymer having a degree of branching of about 50% or greater, and (c) a polishing pad, an abrasive, or a combination thereof.

Polishing system comprising a highly branched polymer

The invention provides a chemical-mechanical polishing system and method comprising a liquid carrier, a polishing pad and/or an abrasive, and at least one amine-containing polymer, wherein the amine-containing polymer has about 5 or more sequential atoms separating the nitrogen atoms of the amino functional groups or is a block copolymer with at least one polymer block comprising one or more amine functional groups and at least one polymer block not comprising any amine functional groups.

CMP systems and methods utilizing amine-containing polymers

The invention provides a method of polishing a substrate containing a low-k dielectric layer comprising (i) contacting the substrate with a chemical-mechanical polishing system comprising (a) an abrasive, a polishing pad, or a combination thereof, (b) an amphiphilic nonionic surfactant, and (c) a liquid carrier, and (ii) abrading at least a portion of the substrate to polish the substrate.

CMP compositions for low-k dielectric materials

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Naperville, IL, United States of America

Kevin J Moeggenborg