Taiwan Semiconductor Manufacturing Comp. Ltd.

Basf Se Corporation

Kevin Huang

Jeng-Horng Chen

Shu-Hao Chang

Kuo-Chang Kau

Shang-Chieh Chien

Anthony Yen

Ming-Chin Chien

Norman Chen

Michael Lauter

Yongqing Lan

Robert Reichardt

Max Siebert

Bastian Marten Noller

Sheik Ansar Usman Ibrahim

Gerald Daniel

Alexandra Muench

Manuel Six

An apparatus includes a vacuum chamber, a reflective optical element arranged in the vacuum chamber and configured to reflect an extreme ultra-violet (EUV) light, and a cleaning module positioned in the vacuum chamber. the cleaning module is operable to provide a mitigation gas flowing towards the reflective optical element and provide a hydrogen-containing gas flowing towards the reflective optical element. The mitigation gas mitigates, by chemical reaction, contamination of the reflective optical element.

Mask cleaning

A lithography system includes a first load lock chamber configured to receive a mask, a cleaning module configured to clean the mask, a second load lock chamber configured to receive a wafer, an exposure module configured to expose the wafer to a light source through use of the cleaned mask. A direct path is provided between the first load lock chamber and the exposure module allowing the first load lock chamber to directly couple to the exposure module without through the cleaning module.

A lithography system includes a load lock chamber comprising an opening configured to receive a mask, an exposure module configured to expose a semiconductor wafer to a light source through use of the mask, and a cleaning module embedded inside the lithography tool, the cleaning module being configured to clean carbon particles from the mask.

Disclosed is an apparatus for lithography patterning. The apparatus includes a substrate stage configured to hold a substrate coated with a deposition enhancement layer (DEL), a radiation source for generating a patterned radiation towards a surface of the DEL, and a supply pipe for flowing an organic gas near the surface of the DEL, wherein elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the DEL.

Lithography patterning with a gas phase resist

Disclosed herein is a chemical mechanical polishing (CMP) composition (Q) containing (A) inorganic particles, (B) a compound of general formula (I) below, and (C) an aqueous medium, in which the composition (Q) has a pH of from 2 to 6. 

Chemical mechanical polishing (CMP) composition for high effective polishing of substrates comprising germanium

Disclosed is a method for lithography patterning. The method includes providing a substrate, forming a deposition enhancement layer (DEL) over the substrate, and flowing an organic gas near a surface of the DEL. During the flowing of the organic gas, the method further includes irradiating the DEL and the organic gas with a patterned radiation. Elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the DEL. The method further includes etching the DEL with the resist pattern as an etch mask, thereby forming a patterned DEL.

A method of fabricating a semiconductor device is disclosed. The method includes forming a radiation-removable-material (RRM) layer over a substrate and removing a first portion of the RRM layer in a first region of the substrate by exposing the first portion of the RRM layer to a radiation beam. A second portion of the RRM layer in a second region of the substrate remains after the removing of the first portion of the RRM layer in the first region. The method also includes forming a selective-forming-layer (SFL) over the second portion of the RRM layer in the second region of the substrate and forming a material layer over the first region of the substrate.

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Hsinchu, Taiwan

Kevin Huang