Applied Materials, Inc.

Keven Kaisheng Yu

Ajay Kumar

Michael N Grimbergen

Madhavi R Chandrachood

Alan Hiroshi Ouye

Amitabh Sabharwal

Graeme Jamieson Scott

Embodiments of the invention generally provide a lid heater for a plasma processing chamber. In one embodiment, a lid heater assembly is provided that includes a thermally conductive base. The thermally conductive base has a planar ring shape defining an inner opening. The lid heater assembly further includes a heating element disposed on the thermally conductive base, and an insulated center core disposed across the inner opening of the thermally conductive base.

Chamber lid heater ring assembly

Methods of silicon etch for trench sidewall smoothing are described. In one embodiment, a method involves smoothing a sidewall of a trench formed in a semiconductor wafer via plasma etching. The method includes directionally etching the semiconductor wafer with plasma generated from a fluorine gas to smooth the sidewall of the trench, the trench having a protective layer formed by plasma generated by a second process gas such as oxygen or a polymerization gas. In another embodiment, a method involves etching a semiconductor wafer to generate a trench having a smooth sidewall. The method includes plasma etching the semiconductor wafer with one or more first process gases including a fluorine gas, simultaneously performing deposition and plasma etching the semiconductor wafer with one or more second process gases including a fluorine gas and a polymerization gas mix, and performing deposition with one or more third process gases including a polymerization gas.

Method of silicon etch for trench sidewall smoothing

A method and apparatus for etching photomasks are provided herein. In one embodiment, a method of etching an ARC layer or an absorber layer disposed on a photomask includes transferring a film stack into an etching chamber, the film stack having an ARC layer or an absorber layer partially exposed through a patterned layer, providing a gas mixture including at least one fluorine containing gas in to a processing chamber, applying a source RF power to form a plasma from the gas mixture, applying a first type of RF bias power to the substrate for a first period of time, applying a second type of RF bias power away from the substrate for a second period of time, and etching the ARC layer or the absorber layer through the patterned layer in the presence of the plasma.

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Union City, CA, United States of America

Keven Kaisheng Yu