Semiconductor Components Industries, LLC

Keunhyuk Lee

Tiburcio Maldo

Seungwon Im

Jie Chang

Jerome Teysseyre

JeongHyuk Park

HuiBin Chen

Jonghwan Baek

Oseob Jeon

Yong Liu

Sixin Ji

Leo Gu

Paolo Bilardo

Michael John Seddon

Inpil Yoo

Joon-seo Son

Joonseo Son

Huibin Chen

Jerome Tysseyre

A clip preform includes a die contact portion and an aligner structure. An intermediate portion connects the die contact portion to a lead contact portion in the aligner structure. The die contact portion is configured to contact a semiconductor die. The aligner structure is configured to attach the lead contact portion to a lead post. The die contact portion, the intermediate portion, and the aligner structure form a structure of a primary clip for connecting the semiconductor die to the lead post. The clip preform is severable by removing parts of the die contact portion and the intermediate portion of the clip preform to form a secondary clip for connecting the semiconductor die to the lead post. The aligner structure, a remaining part of the die contact portion, and a remaining part of the intermediate portion of the clip preform form a structure of the secondary clip.

Flexible clip with aligner structure

Power module package

In one general aspect, a method can include forming a recess and a mesa in a metal layer associated with a substrate, and disposing a first portion of a conductive-bonding component on the mesa and a second portion of the conductive-bonding component in the recess. The method can include disposing a semiconductor component on the conductive-bonding component such that the second portion of the conductive-bonding component is disposed between an edge of the semiconductor component and a bottom surface of the recess.

Module with substrate recess for conductive-bonding component

Described implementations provide wireless, surface mounting of at least two semiconductor die on die attach pads (DAPs) of the semiconductor package, where the at least two semiconductor die are electrically connected by a clip. A stress buffer layer may be provided on the clip, and a heatsink may be provided on the stress buffer layer. The heatsink may be secured with an external mold material.

Dual cool power module with stress buffer layer

Implementations of a semiconductor package may include one or more power semiconductor die included in a die module; a first heat sink directly coupled to one or more source pads of the die module; a second heat sink directly coupled to one or more drain pads of the die module; a gate contact coupled with one or more gate pads of the die module; and a coating coupled directly to the die module. The gate contact may be configured to extend through an immersion cooling enclosure.

Dual side direct cooling semiconductor package

Implementations of semiconductor packages may include a substrate, a first die coupled on the substrate, and a lead frame coupled over the substrate. The lead frame may include a die attach pad. Implementations of semiconductor packages may also include a second die coupled on the die attach pad. The second die may overlap the first die.

Power module and related methods

Implementations of semiconductor packages may include: one or more die electrically coupled to a lead frame. The lead frame may be included within a housing. The semiconductor package may also include a set of signal leads extending from the housing, a set of power leads extending from the housing, and a plurality of press fit pins each fixedly coupled to the set of signal leads and the set of power leads. The set of signal leads and the set of power leads may be configured to couple with a substrate.

Press-fit power module and related methods

Described implementations provide wireless, surface mounting of at least two semiconductor devices on opposed surfaces of a leadframe, to provide an isolated, three-dimensional (3D) configuration. The described implementations minimize electrical failures, even for very high voltage applications, while enabling low inductance and high current. Resulting semiconductor device packages have mounting surfaces that provide desired levels of isolation and insulation, while still enabling straightforward mounting techniques, such as soldering, as well as high levels of thermal reliability.

Isolated 3D semiconductor device package with transistors attached to opposing sides of leadframe sharing leads

In one general aspect, an apparatus can include a semiconductor component, a substrate including a recess, and a conductive-bonding component. The conductive-bonding component is disposed between the semiconductor component and the substrate. The conductive-bonding component has a first thickness between a bottom of the recess and a bottom surface of the semiconductor component greater than a second thickness between the top of the substrate and the bottom surface of the semiconductor component.

A method can include coupling a semiconductor chip and an electrode with a substrate. Bottom and top mold die can be use, where the top mold die define a first space and a second space that is separated from the first space. The method can include injecting encapsulation material to form an encapsulation member coupled to and covering at least a portion of the substrate. The encapsulation member can include a housing unit housing the electrode. The electrode can have a conductive sidewall exposed to, and not in contact with the encapsulation member, such that there is open space between the conductive sidewall of the electrode and the encapsulation member from an uppermost surface to a bottommost surface of the encapsulation member, the substrate can having a portion exposed within the open space, and the encapsulation member can have an open cross-section perpendicular to an upper surface of the substrate.

Power module package and method of manufacturing the same

In a general aspect, a method can include coupling a semiconductor component to a leadframe. The leadframe can include a socket member having a first end portion and a second end portion. The socket member can further include an opening disposed between the first end portion and the second end portion. The opening of the socket member can be configured to receive a solderless pin. The method can also include encapsulating, in a molding compound, at least a portion of the leadframe and at least a portion of the semiconductor component such that the opening of the socket member is exposed through the molding compound.

Growing community of inventors

Suzhou, China

Keunhyuk Lee