Samsung Electronics Co., Ltd.

Yonsei University

Keonhee Cho

Seongook Jung

Taemin Choi

Hyunjun Kim

Seong-Ook Jung

Se Keon Kim

Sekeon Kim

Kyeongrim Baek

Heekyung Choi

Kyeong Rim Baek

A memory cell array of an SRAM including: a top memory cell array including top memory cells; and a bottom memory cell array including bottom memory cells, the top memory cells include: a first top memory cell between a power supply voltage and a middle node, and connected to a first top wordline, a first top bitline and a first top complementary bitline, the bottom memory cells include: a first bottom memory cell to operate with the first top memory cell, connected between the middle node and a ground voltage, and connected to a first bottom wordline, a first bottom bitline and a first bottom complementary bitline, and when write and read operations are not performed on the first top and bottom memory cells, the first top bitline, the first top complementary bitline, the first bottom bitline and the first bottom complementary bitline are connected to the middle node.

Memory cell array of a static random access memory and a static random access memory including the same

A flip-flop includes an input logic circuit, a first latch, a second latch, and an output multiplexer; where the input logic circuit outputs a clock bar signal based on an input data bit and a clock signal, where the first latch and the second latch operate based on the input data bit, the clock signal, and a clock bar signal, where the output multiplexer operates based on outputs from nodes of the first and second nodes and outputs an output data bit, and where the input logic circuit has a uniform value in a period where there is no change of a value of the output data bit.

Dual-edge-triggered flip-flop

An integrated circuit includes: a cell array including a plurality of memory cells in a plurality of first columns and including a plurality of word line assist cells in at least one second column; a plurality of word lines respectively extending on a plurality of first rows of the cell array and connected to the plurality of memory cells and the plurality of word line assist cells; and a row driver configured to drive the plurality of word lines.

Integrated circuit including cell array with word line assist cells

An integrated circuit includes: a cell array including a plurality of memory cells in a plurality of first rows and a plurality of write assistance cells in at least one second row; a plurality of word lines respectively extending on the plurality of first rows; at least one write assistance line respectively extending on the at least one second row; and a row driver connected to the plurality of word lines and the at least one write assistance line, the row driver being configured to, during a write operation, activate at least one of the plurality of write assistance cells through the at least one write assistance line, wherein each of the plurality of write assistance cells includes the same transistor configuration as each of the plurality of memory cells and has the same footprint as each of the plurality of memory cells.

Integrated circuit including cell array with write assist cell

An integrated circuit memory device includes a static random access memory (SRAM) cell, and a charge storing circuit electrically coupled to the SRAM cell. A switching controller is provided, which is electrically coupled to the charge storing circuit. The switching controller and the charge storing circuit are collectively configured to save power by recycling charge associated with a bit line electrically coupled to the SRAM cell by: (i) transferring charge from the bit line to a charge storage node electrically coupled to source terminals of a pair of NMOS pull-down transistors within the SRAM cell upon commencement of a SRAM cell write operation, and then (ii) returning at least a portion of the charge to the bit line upon completion of the SRAM cell write operation.

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Seoul, South Korea

Keonhee Cho