Fujitsu Corporation

Kenyu Uema

Hiroshi Yasuda

Kenichi Kawashima

A method for detecting a position of a micro-mark on a substrate by detecting reflected electrons or secondary electrons radiated from said substrate which is scanned by an electron beam. A pilot mark which has a predetermined relative position with respect to the micro-mark and which is larger than the micro-mark is provided in a range where the electron beam is scanned. First, the pilot mark is scanned by the electron beam and the position of the pilot mark is read out, then, the position of the micro-mark is determined by the read out position of the pilot mark which has a predetermined relative position with respect to the micro-mark.

Method for detecting a position of a micro-mark on a substrate by using

Electron beam exposure system provides a basic pattern data memory for storing data corresponding to the dimensions and the positions of patterns of a basic unit pattern which frequently appears as a unit in a pattern to be exposed on a wafer, and a central processing unit provided with an additional memory system which stores data corresponding to the position at which the basic unit pattern is to be exposed. This system determines the position of the basic unit pattern by adding data from the basic pattern data memory and data from the additional memory system through the central processing unit in accordance with a command of the central processing unit. Thereafter, data corresponding to the dimensions of the patterns in the basic unit patterns from the basic pattern data memory are sent as an input to a deflection system. As a result, the system according to the present invention applies electron beam deflection signals, which are produced by using the obtained data corresponding to the positions and the dimensions of the basic unit patterns, to the deflecting means of the electron beam exposure apparatus.

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Tokyo, Japan

Kenyu Uema