Kyocera Corporation

Kentaro Murakawa

Katsuaki Masaki

A method of manufacturing a semiconductor element according to the present disclosure includes an element forming step (S) of forming, on an underlying substrate (), a semiconductor element () connected to the underlying substrate () via a connecting portion () and including an upper surface () inclined with respect to a growth surface of the underlying substrate (), a preparing step (S) of preparing a support substrate () including an opposing surface () facing the underlying substrate (), a bonding step (S) of pressing the upper surface () of the semiconductor element () against the opposing surface () of the support substrate () and heating the upper surface () to bond the upper surface () of the semiconductor element () to the support substrate (), and a peeling step (S) of peeling the semiconductor element () from the underlying substrate ().

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Kyotanabe, Japan

Kentaro Murakawa