Tokyo Electron Limited

Kabushiki Kaisha Toshiba

Iwatani Corporation

Kenta Yasuda

Akitaka Shimizu

Takashi Kondo

Kazuya Dobashi

Akinori Kitamura

Katsuhiro Ishida

Takehiko Senoo

Yu Yoshino

Kensuke Inai

Toshihiro Aida

Toru Kubota

Shunsuke Ishida

A plasma processing method according to an aspect includes: preparing a plasma processing apparatus including: a chamber; a lower electrode; an upper electrode; a focus ring surrounding a peripheral edge of the lower electrode; and an annular coil disposed on an upper portion of the upper electrode at a more outer position than the peripheral edge of the lower electrode; placing a substrate on the lower electrode, with a peripheral edge of the substrate surrounded by the focus ring; introducing process gas into the chamber; generating plasma of the process gas by applying high-frequency power across the upper electrode and the lower electrode; and leveling an interface of a plasma sheath on an upper portion of the substrate with that on an upper portion of the focus ring by generating a magnetic field by supplying a current to the annular coil.

Plasma processing method and plasma processing apparatus

A substrate cleaning apparatus includes a supporting unit, provided in a processing chamber having a gas exhaust port, for supporting a substrate; one or more nozzle units, each for ejecting gas clusters to a peripheral portion of the substrate supported by the supporting unit to remove unnecessary substances from the peripheral portion; and a moving mechanism for changing relative positions of the supporting unit and the nozzle unit during ejecting the gas clusters. Each nozzle unit discharges a cleaning gas having a pressure higher than that in the processing chamber so that the cleaning gas is adiabatically expanded to form aggregates of atoms and/or molecules.

Substrate cleaning apparatus and vacuum processing system

In a plasma etching method for etching a metal layer of a substrate to be processed through a hard mask by using a plasma etching apparatus, a first step in which a first etching gas comprising a mixed gas of O, CFand HBr is used as an etching gas, and a second step in which a second etching gas comprising a mixed gas of Oand CFis used as an etching gas, are continuously and alternately repeated a plurality of times. At this time, a first high-frequency power of a first frequency and a second high-frequency power of a second frequency, which is lower than the first frequency, are applied to a lower electrode, and the first high-frequency power is applied in a pulse form.

Plasma etching method and plasma etching apparatus

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Kurokawa-gun, Japan

Kenta Yasuda