Ulvac, Inc.

Kenta Doi

Toshiyuki Nakamura

Taichi Suzuki

Yasuhiro Morikawa

Toshiyuki Sakuishi

The present disclosure provides an etching method that includes a resist pattern-forming step of forming a resist layer on a target object, the resist layer being formed of a resin, the resist layer having a resist pattern; an etching step of etching the target object via the resist layer having the resist pattern; and a resist protective film-forming step of forming a resist protective film on the resist layer. The etching step is repetitively carried out multiple times. A processing gas, used in the resist protective film-forming step, includes a gas capable of forming SiOα; wherein a is any one of F, Cl, H, and CH; and each of x, y, z, k, is a selected non-zero value. After the etching steps are repetitively carried out multiple times, the resist protective film-forming step is performed.

Etching method

A silicon dry etching method of the invention, includes: preparing a silicon substrate; forming a mask pattern having an opening on the silicon substrate; forming a deposition layer on the silicon substrate in accordance with the mask pattern while introducing a first gas; carrying out a dry etching process with respect to the silicon substrate in accordance with the mask pattern while introducing a second gas, and thereby forming a recess pattern on a surface of the silicon substrate; and carrying out an ashing process with respect to the silicon substrate while introducing a third gas.

Silicon dry etching method

A plasma processing device includes an inductively coupled plasma antenna including an input end and an output end, a series circuit including an additional inductor and a variable capacitor connected in series, and a controller that varies a capacitance of the variable capacitor. The input terminal is connected via an antenna matching device to an antenna power supply. The output terminal is connected to the additional inductor. The additional inductor is connected via the variable capacitor to ground.

Plasma processing device

An etching method of the invention includes: a resist pattern-forming step of forming a resist layer on a target object, the resist layer being formed of a resin, the resist layer having a resist pattern; an etching step of etching the target object via the resist layer having the resist pattern; and a resist protective film-forming step of forming a resist protective film on the resist layer. The etching step is repetitively carried out multiple times. After the etching steps are repetitively carried out multiple times, the resist protective film-forming step is carried out.

A high-frequency power circuit includes a first antenna circuit and a second antenna circuit that are connected in parallel to a matching box connected to a high-frequency power supply. The first antenna circuit include a first antenna, a first distribution capacitor, and a first variable capacitor. The second antenna circuit includes a second antenna, a second distribution capacitor, and a second variable capacitor. A controller sets a capacitance of the first variable capacitor based on a detection result of a phase difference between current and voltage in a series-connected portion of the first antenna and the first variable capacitor during plasma production to reduce this phase difference and sets a capacitance of the second variable capacitor based on a detection result of a phase difference between current and voltage in a series-connected portion of the second antenna and the second variable capacitor during plasma production to reduce this phase difference.

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Chigasaki, Japan

Kenta Doi