Tokyo Electron Limited

Kenshiro Asahi

Reiko Sasahara

Satoshi Toda

Tsuhung Huang

Takuya Abe

Teppei Okumura

Toshinori Debari

Ken Nakagomi

Hiroyuki Abe

Yoshie Ozawa

Woonghyun Jeung

Seungmin Kim

Kenichi Nakahata

An etching method includes: providing, to an interior of a chamber, a substrate having a three-layered film formed by stacking a first silicon oxide-based film, a silicon nitride-based film, and a second silicon oxide-based film; and collectively etching the three-layered film using a HF—NH-based gas in the interior of the chamber while adjusting a gas ratio in each of the first silicon oxide-based film, the silicon nitride-based film, and the second silicon oxide-based film.

Etching method and etching apparatus

There is provided an etching method including: a step of disposing a substrate in a chamber, the substrate having a silicon nitride film, a silicon oxide film, a silicon, and a silicon germanium; a step of setting a pressure in the chamber to 1,333 Pa or more; and a step of selectively etching the silicon nitride film with respect to the silicon oxide film, the silicon, and the silicon germanium by supplying a hydrogen fluoride gas into the chamber.

Etching method

Growing community of inventors

Nirasaki, Japan

Kenshiro Asahi