Tokyo Electron Limited

Tokyo Electron Limi Ted

Kensaku Narushima

Takanobu Hotta

Atsushi Matsumoto

Satoshi Wakabayashi

Katsumasa Yamaguchi

Hironori Yagi

Nagayasu Hiramatsu

Kouichi Sekido

Kunihiro Tada

Hideaki Yamasaki

Seishi Murakami

Hiroyuki Takahashi

Eiichi Komori

Daisuke Toriya

Satoshi Toda

Yasushi Aiba

Kohichi Satoh

Kentaro Asakura

Takamitsu Takayama

Masato Araki

Tomohisa Kimoto

Takuya Kawaguchi

Motoko Nakagomi

Fumitaka Amano

Taiki Katou

Tomohisa Maruyama

Kennan Mo

Atsunari Matsuyama

Noriyuki Watanabe

A method of forming a ruthenium silicide film on a surface of a substrate includes: forming a ruthenium film to cover a diffusion layer by supplying a gas containing a ruthenium compound to the surface of the substrate where the diffusion layer is exposed; and forming the ruthenium silicide film including RuSiby siliciding the ruthenium film by supplying a gas containing a silicon compound to the substrate while heating the substrate to a temperature within a range of 420 degrees C. or higher and lower than 500 degrees C.

Method and apparatus for forming ruthenium silicide film on surface of substrate

There is provided a method of processing a substrate, the method including: providing the substrate on which a natural oxide film is formed; performing a pre-processing on the substrate such that the natural oxide film formed on the substrate is removed; and directly forming a tungsten film on the substrate by heating a stage on which the substrate is mounted to a predetermined temperature and supplying a tungsten chloride gas and a reduction gas to the substrate which has been subjected to the pre-processing.

Substrate processing method and film forming system

A raw material supply apparatus includes: a raw material supply path through which a raw material gas is supplied into a processing container; a valve provided in the raw material supply path; a pressure sensor configured to detect an internal pressure of the raw material supply path; a raw material exhaust path connected to the raw material supply path and through which the raw material gas in the raw material supply path is exhausted; an opening degree adjustment mechanism provided in the raw material exhaust path and configured to control the internal pressure of the raw material supply path based on an adjustment of an opening degree of the opening degree adjustment mechanism; and a controller configured to perform the adjustment of the opening degree of the opening degree adjustment mechanism based on a value detected by the pressure sensor.

Raw material supply apparatus and film forming apparatus

A method of controlling flow rate in a gas supply device for supplying a mixed gas containing a raw material gas, which is generated by vaporizing a raw material in a raw material container, and a carrier gas, includes: supplying the mixed gas at a predetermined target flow rate; acquiring a flow rate of the mixed gas when supplying the mixed gas; specifying a stable range of the flow rate of the mixed gas acquired when acquiring the flow rate; calculating a representative value of flow rates of the mixed gas in the stable range specified when specifying the stable range; and correcting the target flow rate based on the representative value calculated when calculating the representative value and the target flow rate.

Flow rate control method, flow rate control device, and film forming apparatus

A method of forming a tungsten film in a penetration portion provided in a film formed on a surface of a base so as to expose the surface of the base includes: forming a barrier metal film made of a nitride of a transition metal in the penetration portion such that the barrier metal film formed on the exposed surface of the base is thicker than the barrier metal film formed on a side wall of the penetration portion; and selectively forming the tungsten film on the exposed surface of the base by supplying a tungsten chloride gas and a reducing gas for reducing the tungsten chloride gas to the penetration portion.

Method of forming tungsten film and controller

There is provided a gas supply device for vaporizing a raw material inside a raw material container and supplying a raw material gas into a processing vessel together with a carrier gas, including: a mass flow controller connected to an upstream side of the raw material container and configured to control a flow rate of the carrier gas; a flow meter connected to a downstream side of the raw material container; and a control part configured to perform a control so as not to supply the raw material gas into the processing vessel until a detection value of the flow meter with respect to the carrier gas controlled to have a constant flow rate by the mass flow controller is stabilized after replacing the raw material container.

Gas supply device, gas supply method and film forming method

There is provided a method of forming a tungsten nitride film on a substrate to be processed, including: forming a tungsten film by repeating a cycle of alternately supplying a tungsten chloride gas and a hydrogen-containing gas with a supply of a purge gas interposed between the supply of the tungsten chloride gas and the supply of the hydrogen-containing gas; and nitriding the tungsten film by supplying a nitrogen-containing gas.

Film forming method

There is provided a film forming method including: an etching step of etching a portion of a base film to reduce a film thickness of the base film by intermittently supplying a tungsten chloride gas into a processing container while performing a purging step in the course of the intermittent supply of the tungsten chloride gas, wherein the processing container accommodates a substrate, and the base film is formed on a surface of the substrate; and a film forming step of forming a tungsten film on the base film by alternately supplying the tungsten chloride gas and a reducing gas for reducing the tungsten chloride gas into the processing container while performing the purging step in the course of the alternate supply of the tungsten chloride gas and the reducing gas, wherein the film forming step occurs after the etching step.

Film forming method and film forming apparatus

There is provided a gas supply method for temporarily storing a raw material gas generated by vaporizing a raw material accommodated in a raw material container inside a buffer tank together with a carrier gas and subsequently supplying the raw material gas into a processing container. The gas supply method includes: controlling a flow rate of a gas exhausted from the buffer tank and a flow rate of the raw material gas and the carrier gas filled in the buffer tank, so that a second internal pressure of the buffer tank becomes equal to a first internal pressure of the buffer tank when a process is performed by supplying the raw material gas into the processing container, before supplying the raw material gas into the processing container.

Gas supply method and film forming method

There is provided a film forming method of forming a metal film, which includes: alternately supplying a metal chloride gas and a reducing gas for reducing the metal chloride gas to a substrate arranged inside a processing vessel a plurality of times, wherein the alternately supplying the metal chloride gas and the reducing gas includes a period of time during which a flow rate of the metal chloride gas gradually increases.

A method of filling recesses in a substrate with tungsten includes preparing the substrate within a chamber of a film forming apparatus, performing a first cycle at least once, the first cycle comprising introducing a tungsten-containing precursor gas into the chamber, purging the chamber, introducing a hydrogen-containing gas into the chamber, and purging the chamber, and performing a second cycle at least once after the first cycle is performed at least once, the second cycle comprising introducing the tungsten-containing precursor gas into the chamber, purging the chamber, introducing the hydrogen-containing gas into the chamber, and purging the chamber. A pressure in the chamber when the second cycle is performed is set to a pressure lower than a pressure in the chamber when the first cycle is performed.

Method of filling recesses in substrate with tungsten

In a raw material gas supply apparatus, a control unit obtains an offset value of (m&#x2212;(m+m)), m, mand mbeing respective measurement values of first and second mass controllers, and a mass flow meter, by supplying a carrier gas and a dilution gas in a state where the carrier gas flows through a bypass channel. Further, the control unit obtains an actual measurement value of a flow rate of the raw material by subtracting the offset value from (m&#x2212;(m+m)) obtained by supplying the carrier gas and dilution gas in a state where the carrier gas flows through the inside of a raw material container and calculating a difference between a target value of the flow rate of the raw material and the actual measurement value, and adjusts a set value of the first mass flow controller such that the flow rate of the raw material becomes.

Raw material gas supply apparatus, raw material gas supply method and storage medium

A film formation device includes: a processing vessel; a mounting stand installed within the processing vessel and configured to mount a substrate thereon; an elevating shaft installed so as to extend in an up-down direction while supporting the mounting stand and connected to an external elevator mechanism through a through-hole formed in the processing vessel; a bellows installed between the processing vessel and the elevator mechanism and configured to cover a periphery of the elevating shaft at a lateral side of the elevating shaft; a lid member disposed so as to surround the elevating shaft with a gap left between a lateral circumferential surface of the elevating shaft and the lid member; and a purge gas supply part configured to supply a purge gas into the bellows so that a gas flow from the bellows toward the processing vessel through the gap is formed.

Film formation device

A method for etching a silicon oxide film on a target substrate where an etching area is partitioned by pattern layers and stopping the etching before a base layer of the silicon oxide layer is etched is disclosed. The method includes heating the target substrate in a vacuum atmosphere and intermittently supplying, as an etching gas, at least one of a processing gas containing a hydrogen fluoride gas and an ammonia gas in a pre-mixed state and a processing gas containing a compound of nitrogen, hydrogen and fluorine to the target substrate from a gas supply unit multiple times.

Etching method, etching apparatus and storage medium

A tungsten film forming method for forming a tungsten film on a surface of a target substrate by an ALD (atomic layer deposition) method comprises adding a reduction gas to allow an ALD reaction to mainly occur when a tungsten chloride gas is supplied. In the ALD method, the tungsten chloride gas as a tungsten source gas and the reduction gas for reducing the tungsten chloride gas are alternately supplied into a chamber which accommodates the target substrate and is maintained under a depressurized atmosphere, with a purge process for purging an inside of the chamber performed between the supply of the tungsten chloride gas and the supply of the reduction gas.

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Nirasaki, Japan

Kensaku Narushima