Other

Tokyo Electron Limited

Therma-wave, Inc.

Kla Tencor Corporation

Sensys Instruments Corporation

Kenneth C Johnson

Fred E Stanke

Abdurrahman Sezginer

Adam Eales Norton

Holger Tuitje

Mehrdad Nikoonahad

Haiming Wang

Patrick M Maxton

Hsu-Ting Huang

Joseph R Carter

A DUV scanned-spot-array lithography system comprises an array of phase- Fresnel microlenses, which focus multiple radiation beams through intermediate foci at the object surface of a projection system. The intermediate foci are imaged by the projection system onto corresponding focused-radiation spots on an image plane, and the spots expose a photosensitive layer proximate the image plane as the layer is scanned in synchronization with modulation of the beams. The modulators may comprise micromechanical shutters proximate the intermediate foci for ON/OFF switching, in series with transmission grating modulators for gray-level control, and the microlenses may also be actuated to provide dynamic beam centering control. A nodal line printing technique may be used to provide ultra-high-resolution and high-throughput maskless printing capability in conjunction with multi-patterning or dual-wavelength recording processes.

Scanned-spot-array DUV lithography system

A plasma-generated EUV light source uses an EUV-diffracting collection mirror to channel spectrally pure in-band radiation through an intermediate-focus aperture and through EUV illumination optics. Out-of-band radiation is either undiffracted by the collection mirror or is diffractively scattered away from the aperture. The undiffracted portion, plus plasma-emitted radiation that does not intercept the collection mirror, can be efficiently recycled back to the plasma via retroreflecting mirrors, cat's-eye reflectors, or corner-cube reflectors, to enhance generation of in-band EUV radiation by the plasma.

EUV light source with spectral purity filter and power recycling

In a scanned-spot-array lithography system, a modulated array of radiant-energy source spots is imaged by a projection lens onto a printing surface, which is scanned in synchronization with the spot modulation to print a synthesized, high-resolution raster image. Similarly, in a scanned-spot-array microscopy system, an array of radiant-energy source spots is imaged by a projection lens onto an inspection surface, and radiation reflected from or transmitted through the image spots is collected and detected to acquire a synthesized, high-resolution raster image of the surface. In either case, the spot-generation optics can be configured to counterbalance and neutralize imperfect imaging characteristics of the projection lens, enabling perfectly flat-field, distortion-free, and aberration-free point imaging of the entire spot array. The spot-generation optics can also be further configured to achieve narrow-band achromatization of the optical system, and to optimally control the intensity and polarization characteristics of the image-plane radiation.

Spot-array imaging system for maskless lithography and parallel confocal microscopy

In an EUV scanned-spot-array lithography system, a modulated array of radiation beams diverging from object spots on an object surface and is projected onto a printing surface via a two-mirror projection system similar to a flat-image, Schwarzschild system. Each beam converges to a diffraction-limited image point on the surface, and the surface is scanned in synchronization with the beam modulation to print a synthesized, high-resolution raster image. The spot-generation optics can be configured to compensate for object field curvature, distortion, and geometric point-imaging aberrations in the projection system, enabling diffraction-limited printing without coherent proximity effects over the full image field. The spot-generation optics can use either micromirrors or transmitting microlenses, and can be diffractive (e.g., phase-Fresnel lenses) or non-diffractive. Chromatic dispersion in either refractive or diffractive elements can be substantially eliminated by configuring the micro-optics as Schupmann achromatic doublets.

Scanned-spot-array EUV lithography system

Optical radiation patterns at two wavelengths, an 'imaging' wavelength and a 'masking' wavelength, are superimposed on a photochromic layer, wherein the masking wavelength induces optical absorbance in the layer, allowing the imaging wavelength to transmit only through narrow transmittance zones where the masking-wavelength radiation has an optical null. The patterns are preferably formed as a focal-point array. At each focal point a focused-radiation spot at the imaging wavelength is superimposed with an annular-radiation spot at the masking wavelength. The spots may be generated by an array of microlenses with focal points proximate the layer. (Several novel types of dual-wavelength microlenses are disclosed.) Alternatively, the focused-radiation spots may be generated in separate optical paths for the two wavelengths, and optically combined at the photochromic layer by means of beam-combining and projection optics. The radiation patterns can also comprise full-field images, which are formed by separate photomasks for the two wavelengths.

Optical systems and methods for absorbance modulation

A 'Stacked-Grating Light Modulator' ('SGLM') comprises two diffraction grating elements, a reflection grating and a transmission grating, in close parallel proximity. An incident beam transmits through the transmission grating and is reflected by the reflection grating back through the transmission grating. The relative lateral position of the two gratings is varied to modulate the beam's zero-order reflectance.

Stacked-grating light modulator

A method of controlling the lithography process used to fabricate patterns on layers of a semiconductor wafer is disclosed. The method includes providing at least two scatterometry targets, each target having a first pattern formed in an upper layer substantially aligned with a second pattern formed in a lower layer. The targets are optically inspected. A theoretical model of each target is created, with each model including a plurality of unknown parameters defining the target and wherein at least one of the parameters is common to each of the targets. A regression analysis is performed wherein the measured optical response of the targets is compared to calculated optical responses generated by varying the values of the parameters applied to the model. During the regression analysis, a common value for the common parameter is maintained. The results are used to control the lithography process.

Overlay metrology method and apparatus using more than one grating per measurement direction

A scanning microlens-array printer comprises an optical focus/alignment subsystem in which the optical sensor elements are integrated within a microlens printhead unit. The unit also incorporates an integrated spatial light modulator; thus the printhead incorporates all the critical optomechanical components necessary for high-resolution, maskless, lithographic printing. Alignment is detected by an interferometric process in which a reference diffraction grating on a printing surface coherently combines two optical beams to generate an interference signal that is sensitive to the grating's lateral position. Focus sensing is effected by using the reference grating to divide a normally-incident convergent beam into two obliquely-directed reflected beams, and detecting the focus-induced translational shift in the reflected beams' focal points.

Focus and alignment sensors and methods for use with scanning microlens-array printer

A small-spot imaging, spectrometry instrument for measuring properties of a sample has a polarization-scrambling element, such as a birefringent plate depolarizer, incorporated between the polarization-introducing components of the system, such as the beamsplitter, and the microscope objective of the system. The plate depolarizer varies polarization with wavelength, and may be a Lyot depolarizer with two plates, or a depolarizer with more than two plates (such as a three-plate depolarizer). Sinusoidal perturbation in the resulting measured spectrum can be removed by data processing techniques or, if the depolarizer is thick or highly birefringent, the perturbation may be narrower than the wavelength resolution of the instrument.

Small-spot spectrometry instrument with reduced polarization and multiple-element depolarizer therefor

A method for measuring overlay in semiconductor wafers includes a calibration phase in which a series of calibration samples are analyzed. Each calibration sample has an overlay that is known to be less than a predetermined limit. A difference spectrum for a pair of reflectively symmetric overlay targets is obtained for each calibration sample. The difference spectra are then combined to define a gross overlay indicator. In subsequent measurements of actual wafers, difference spectra are compared to the overlay indicator to detect cases of gross overlay.

Diffracting, aperiodic targets for overlay metrology and method to detect gross overlay

A calibration method suitable for highly precise and highly accurate surface metrology measurements is described. In preferred embodiments, an optical inspection tool including a movable optics system is characterized in terms of position and wavelength dependent quantities over a range of motion. Once the position-dependant quantities are determined at various wavelengths and positions, they are stored and used to interpret data from test wafers having an unknown metrology. Free of position-dependent variations and other information pertaining to the measurement system, the accuracy of the resulting wafer measurement more closely matches the precision of the tool than existing techniques. In particular embodiments, a portion of the characterization of the optical system is accomplished by using tilted black glass to provide a non-reflective reference.

Method and apparatus for position-dependent optical metrology calibration

An overlay target includes two pairs of test patterns used to measure overlay in x and y directions, respectively. Each test pattern includes upper and lower grating layers. A single pitch (periodic spacing) is used for all gratings. Within each test pattern, the upper and lower grating layers are laterally offset from each other to define an offset bias. Each pair of test patterns has offset biases that differ by the grating pitch/4. This has the important result that the combined optical response of the test patterns is sensitive to overlay for all values of overlay. An algorithm obtains overlay and other physical properties of the two or more test patterns from their optical responses in one combined regression operation.

An EUV lithography system achieves high-resolution printing without the use of photomasks, projection optics, multilayer mirrors, or an extremely high-power EUV source. The system comprises a xenon laser-produced-plasma (LPP) illumination source (requiring 93 W hemispherical EUV emission in the wavelength range 10&#x2013;12 nm), all-ruthenium optics (grazing-incidence mirrors and microlenses) and spatial light modulators comprising MEMS-actuated microshutters. Two 300-mm wafers are simultaneously exposed with a single 10 kHz LPP source to achieve a throughput of 6 wafers per hour, per LPP source. The illumination is focused by the microlens arrays onto diffraction-limited (42-nm FWHM) spots on the wafer plane, and the spots are intensity-modulated by the microshutters as they are raster-scanned across the wafer surface to create a digitally synthesized exposure image. The optical path between the source and the microlenses traverses seven grazing-incidence mirrors (two collimator elements and five fold mirrors), which have high reflection efficiency and essentially unlimited wavelength bandpass.

Growing community of inventors

Santa Clara, CA, United States of America

Kenneth C Johnson