Shin-etsu Chemical Co., Ltd.

Kenji Yamada

Satoshi Watanabe

Masaki Ohashi

Koji Hasegawa

Keiichi Masunaga

Masaaki Kotake

Jun Hatakeyama

Takayuki Fujiwara

Kazuhiro Katayama

Daisuke Domon

Ryosuke Taniguchi

Teppei Adachi

Takeshi Sasami

Kentaro Kumaki

The present invention is a resist composition comprises a polymer compound having one or two repeating units selected from repeating units represented by the following general formulae (p-1), (p-2) and (p-3), a repeating unit represented by the following formula (a-1) and the formula (a-2) polarities of which are changed by an action of an acid, and a repeating unit represented by the following formula (b-1); a salt represented by the following general formula (B); and a solvent, wherein a difference of a C log P of the repeating unit (a-1) before and after changing the polarity is 3.0 to 4.5, and a difference of a C log P of the repeating unit (a-2) before and after changing the polarity is 2.5 to 3.2. This provides a resist composition which has high sensitivity, wide DOF and high resolution, reduces LER, LWR and CDU, and has good pattern shape after exposure and excellent etching resistance. 

Resist composition and patterning process

A novel carboxylic acid iodonium salt and a resist composition comprising the same as a quencher are provided. When resist composition is processed by photolithography using KrF or ArF excimer laser, EB or EUV, there is formed a resist pattern which is improved in rectangularity, MEF, LWR, and CDU.

Iodonium salt, resist composition, and pattern forming process

A negative resist composition comprising a sulfonium compound having formula (A) and a base polymer is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER. 

Chemically amplified negative resist composition and resist pattern forming process

A polymer comprising recurring units containing a specific lactone ring and having an alkyl group on &#x3b3;-butyrolactone skeleton of fused ring lactone and an alkyl ester substituent group intervening between the lactone structure and the polymer backbone is provided. A resist composition comprising the polymer as base resin is improved in such properties as DOF margin and MEF and quite effective for precise micropatterning.

Resist composition, pattern forming process, polymer, and monomer

A negative resist composition comprising (A) a sulfonium compound of betaine type and (B) a polymer is provided. The resist composition is effective for controlling acid diffusion during the exposure step, exhibits a very high resolution during pattern formation, and forms a pattern with minimal LER.

Negative resist composition and resist pattern forming process

A pattern is formed by coating a resist composition comprising (A) a PPD inhibitor, (B) a polymer adapted to change its solubility in an organic solvent under the action of acid, (C) a photoacid generator, and (D) an organic solvent onto a substrate, baking, exposing the resist film, PEB, and developing in an organic solvent developer. The resist composition ensures to form a pattern in a consistent manner while inhibiting any CD shrinkage and pattern profile change due to a delay from PEB to development.

A shrink material is provided comprising a specific polymer and a solvent containing an anti-vanishing solvent. A pattern is formed by applying a resist composition comprising a base resin and an acid generator onto a substrate to form a resist film, exposing, developing in an organic solvent developer to form a negative resist pattern, applying the shrink material onto the pattern, and removing the excessive shrink material with an organic solvent for thereby shrinking the size of holes and/or slits in the pattern.

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Joetsu, Japan

Kenji Yamada