Hitachi-high-technologies Corporation

Hitachi High-tech Corporation

Hitachi, Ltd.

Kenji Tanimoto

Yusuke Abe

Yuko Sasaki

Hiroshi Makino

Takuma Yamamoto

Hiroya Ohta

Makoto Suzuki

Hisaya Murakoshi

Yutaka Kaneko

Hiroyuki Shinada

Mari Nozoe

Takanori Ninomiya

Takashi Doi

Atsuko Takafuji

Taku Ninomiya

Takeyoshi Ohashi

Keigo Kasuya

Yuji Kasai

Kaori Bizen

Tomohiro Tamori

Shuhei Ishikawa

Hideo Todokoro

Yasunari Sohda

Hajime Kawano

Makoto Sakakibara

Zhaohui Cheng

Masaaki Nojiri

Soichiro Matsunaga

Hyejin Kim

Shinichi Kato

Yusuke Nakamura

Hiroshi Morita

Takashi Hiroi

Hiroyuki Ito

Kenji Miyata

Satoru Yamaguchi

Takuya Aoyagi

Tadashi Fujieda

Momoyo Enyama

Souichi Katagiri

Tatsuya Miyake

Kei Sakai

Takashi Naitou

Tomohiro Funakoshi

Yasunori Goto

Hikaru Koyama

Takashi Ichimura

Keiichiro Hitomi

Toshimasa Kameda

Daigo Komesu

Shunichi Watanabe

Shuuichirou Takahashi

Yusuke Sakai

Provided is a charged particle beam device that can precisely manage a temperature at which a cold field emitter is heated. A charged particle beam device includes: a cold field emitter including a tip having a sharpened distal end, a filament connected to the tip, and an auxiliary electrode covering the filament and having an opening from which the tip protrudes; an extraction electrode to which an extraction voltage for extracting electrons from the cold field emitter is applied; and an acceleration electrode to which an acceleration voltage for accelerating the electrons extracted from the cold field emitter is applied. When the tip and the filament are heated, thermionic electrons emitted from the tip and the filament are collected by the auxiliary electrode to measure a current by applying a positive voltage with respect to the tip to the auxiliary electrode.

Charged particle beam device

To provide a charged particle beam device including a booster electrode and an object lens that generates a magnetic field in a vicinity of a sample, and capable of preventing ion discharge, an insulator is disposed between a magnetic field lens and the booster electrode. A tip of the insulator protrudes to a tip side of an upper magnetic path from a tip of a lower magnetic path of the magnetic field lens. The tip on a lower side of the insulator is above the lower magnetic path, and a non-magnetic metal electrode is embedded between the upper magnetic path and the lower magnetic path.

In an electron source including a suppressor electrode having an opening at one end portion thereof in a direction along a central axis and an electron emission material having a distal end protruding from the opening, the suppressor electrode further includes a receding portion receding to a position farther from the distal end of the electron emission material than the opening in the direction along the central axis at a position in an outer peripheral direction than the opening, and at least a part of the receding portion is disposed within a diameter of 2810 μm from a center of the opening. Accordingly, an electron source, an electron gun, and a charged particle beam device such as an electron microscope using the same, in which a machine difference in a device performance due to an axial shift between the electron emission material and the suppressor electrode is reduced, are implemented.

Electron source, electron gun, and charged particle beam device

A computation device is provided for measuring the dimensions of patterns formed on a sample based on a signal obtained from a charged particle beam device. The computation device includes a positional deviation amount calculation unit for calculating the amount of positional deviation in a direction parallel to a wafer surface between two patterns having different heights based on an image acquired at a given beam tilt angle; a pattern inclination amount calculation unit for calculating an amount of pattern inclination from the amount of positional deviation using a predetermined relational expression for the amount of positional deviation and the amount of pattern inclination; and a beam tilt control amount calculation unit for controlling the beam tilt angle so as to match the amount of pattern inclination. The pattern measurement device sets the beam tilt angle to a calculated beam tilt angle, reacquires an image and measures the patterns.

Pattern measurement device and pattern measurement method

An object of the invention is to acquire a high-quality image while maintaining an improvement in throughput of image acquisition (measurement (length measurement)). The present disclosure provides a charged particle beam system including a charged particle beam device and a computer system configured to control the charged particle beam device. The charged particle beam device includes an objective lens, a sample stage, and a backscattered electron detector that is disposed between the objective lens and the sample stage and that adjusts a focus of a charged particle beam with which a sample is irradiated. The computer system adjusts a value of an electric field on the sample in accordance with a change in a voltage applied to the backscattered electron detector.

Charged particle beam system

When focus adjustment is performed according to the height of the surface of a sample at each inspection point in order to continuously inspect a plurality of inspection points on a wafer by using an electron microscope, even when the focus adjustment by an electrostatic lens in which a variation of heights of inspection points is greater than a predetermined range, and that can perform adjustment at a high speed and adjustment by an electromagnetic lens with a low speed are required to be used together, a flow of focus adjustment in which the number of times of the adjustment by the electromagnetic lens is reduced by using a relation of changes of heights at inspection points, an inspection order, and a range in which an electrostatic focus can be performed is realized, so that inspection with high throughput is made possible.

Electron microscope and method of adjusting focus of electron microscope

Provided is a charged particle beam device capable of focusing with high accuracy even when a charged particle beam has a large off-axis amount. The charged particle beam device generates an observation image of a sample by irradiating the sample with a charged particle beam, and includes: a deflection unit that inclines the charged particle beam; a focusing lens that focuses the charged particle beam; an adjustment unit that adjusts a lens strength of the focusing lens based on an evaluation value calculated from the observation image; a storage unit that stores a relationship between a visual field movement amount and the lens strength; and a filter setting unit that calculates the visual field movement amount based on an inclination angle of the charged particle beam and the relationship, and sets an image filter to be superimposed on the observation image based on the calculated visual field movement amount.

The present invention has a computation device for measuring the dimensions of patterns formed on a sample on the basis of a signal obtained from a charged particle beam device. The computation device has a positional deviation amount calculation unit for calculating the amount of positional deviation in a direction parallel to a wafer surface between two patterns having different heights on the basis of an image acquired at a given beam tilt angle; a pattern inclination amount calculation unit for calculating an amount of pattern inclination from the amount of positional deviation using a predetermined relational expression for the amount of positional deviation and the amount of pattern inclination; and a beam tilt control amount calculation unit for controlling the beam tilt angle so as to match the amount of pattern inclination. The pattern measurement device sets the beam tilt angle to a calculated beam tilt angle, reacquires an image and measures the patterns.

A scanning electron microscope includes an electron-optical system including an electron source and an objective lens, a stage on which a sample is placed, a secondary electron detector disposed adjacent to the electron source relative to the objective lens and configured to detect secondary electrons, a backscattered electron detector disposed between the objective lens and the stage and configured to detect backscattered electrons, a backscattered electron detection system controller configured to apply a voltage to the backscattered electron detector, and a device-control computer configured to detect a state of an electrical charge carried by the backscattered electron detector based on signal intensity at the secondary electron detector when the primary electrons are applied to the sample with a predetermined voltage applied to the backscattered electron detector.

Scanning electron microscope and method for measuring pattern

Provided is a scanning electron microscope which can perform high-speed focus correction even when an electron beam having high energy is used. The scanning electron microscope includes an electron optical system including an electron sourcethat emits an electron beam and an objective lens, a sample stagewhich is disposed on a stageand on which a sampleis placed, a backscattered electron detectorwhich is disposed between the objective lens and the sample stage and is configured to detect backscattered electronsemitted due to interaction between the electron beam and the sample, a backscattered electron detection system control unitwhich is provided corresponding to the backscattered electron detector and is configured to apply a voltage to the backscattered electron detector, and a device control calculation device. The objective lens has an opening in a stage direction, and the device control calculation device performs focus correction of the electron beam by controlling the voltage applied to the backscattered electron detector from the backscattered electron detection system control unit.

Scanning electron microscope

An object of the invention is to stably supply an electron beam from an electron gun, that is, to prevent variation in intensity of the electron beam. The invention provides a charged particle beam device that includes an electron gun having an electron source, an extraction electrode to which a voltage used for extracting electrons from the electron source is applied, and an acceleration electrode to which a voltage used for accelerating the electrons extracted from the electron source is applied, a first heating unit that heats the extraction electrode, and a second heating unit that heats the acceleration electrode.

The purpose of the present invention is to provide a pattern measurement device that is capable of highly accurately measuring a groove bottom, hole bottom, or the like, regardless of the accuracy of the formation of a deep groove or deep hole. To that end, the present invention proposes a pattern measurement device provided with a computation device for measuring the dimensions of a pattern formed on a sample on the basis of a signal obtained by a charged particle beam device, wherein the computation device determines the deviation between a first part of the pattern and a second part of the pattern at a different height than the first part and pattern dimension values on the basis of a detection signal obtained on the basis of the scanning of the sample by a charged particle beam and corrects the pattern dimension values using the deviation determined from the detection signal and relationship information indicating the relationship between the pattern dimensions and the deviation.

There is provided a charged particle beam apparatus including: a charged particle source; a condenser lens and an object lens for converging a charged particle beam from the charged particle source and irradiating the converged charged particle beam to a specimen; and plural image shift deflectors for deflecting the charged particle beam. In the charged particle beam apparatus, the deflection of the charged particle beam is controlled using first control parameters that set the optical axis of a charged particle beam to a first optical axis that passes through the center of the object lens and enters a predefined position of the specimen, and second control parameters that transform the first control parameters so that the first control parameters set the optical axis of the charged particle beam to a second optical axis having a predefined incident angle different from the incident angle of the first optical axis.

Charged particle beam apparatus

The purpose of the present invention is to provide a charged particle beam device for detecting, with highly precise angular discrimination, charged particles emitted from a specimen. To achieve this purpose, proposed is a charged particle beam device provided with a scanning deflector for scanning on a specimen a charged particle beam emitted from a charged particle source, the charged particle beam device being provided with: a first detector for detecting charged particles obtained by scanning of the charged particle beam on a specimen, and a second detector placed between the first detector and the specimen, and supported so as to be able to move in the charged particle beam light axis direction.

The purpose of the present invention is to provide a charged particle beam device that exhibits high performance due to the use of vanadium glass coatings, and to provide a method of manufacturing a component for a charged particle beam device. Specifically provided is a charged particle beam device using a vacuum component characterized by comprising a metal container, the interior space of which is evacuated to form a high vacuum, and coating layers formed on the surface on the interior space-side of the metal container, wherein the coating layers are vanadium-containing glass, which is to say an amorphous substance. Coating vanadium glass onto walls of a space where it is desirable to form a high vacuum, for example walls in the vicinity of an electron source, reduces gas discharge in the vicinity of the electron source, and the getter effect of the coating layer induces localized evacuation and enables the formation of an extremely high vacuum, even in spaces having a complex structure, without providing a large high-vacuum pump.

Charged particle beam device, and method of manufacturing component for charged particle beam device

Growing community of inventors

Tokyo, Japan

Kenji Tanimoto