Nissan Chemical Industries Limited

Nissan Chemical Corporation

Kenji Takase

Makoto Nakajima

Rikimaru Sakamoto

Satoshi Takeda

Wataru Shibayama

Hiroyuki Wakayama

Yuta Kanno

Takafumi Endo

Keisuke Hashimoto

Tetsuya Shinjo

Hirokazu Nishimaki

Yasushi Sakaida

Takahiro Kishioka

Taku Kato

Shuhei Shigaki

Keisuke Shuto

Takehiro Nagasawa

Masahisa Endo

Kentaro Ohmori

Hiroshi Kita

Yuto Hashimoto

Daisuke Sakuma

A resist underlayer film-forming composition includes a resin; and a crosslinkable compound of Formula (1) or Formula (2): wherein the crosslinkable compound of Formula (1) or Formula (2) is a compound obtained by reacting a compound of Formula (3) or Formula (4): with an ether compound comprising a hydroxy group or a Calcohol.

Resist underlayer film-forming composition containing substituted crosslinkable compound

A radiation sensitive composition including a siloxane polymer exhibiting phenoplast crosslinking reactivity as a base resin, which is excellent in resolution and can be used as a radiation sensitive composition capable of allowing a pattern having a desired-shape to be formed with sufficient precision. A radiation sensitive composition including as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof; and a photoacid generator, in which the hydrolyzable silane includes hydrolyzable silanes of Formula (1)RRSi(R)&#x2003;&#x2003;Formula (1)wherein Ris an organic group of Formula (1-2) and is bonded to a silicon atom through a Si&#x2014;C bond or a Si&#x2014;O bond, and Ris a hydrolyzable group; and Formula (2)RRSi(R)&#x2003;&#x2003;Formula (2)wherein Ris an organic group of Formula (2-1) and is bonded to a silicon atom through a Si&#x2014;C bond or a Si&#x2014;O bond, and Ris a hydrolyzable group.

Radiation sensitive composition

The present invention provides a resist underlayer film-forming composition for lithography for forming a resist underlayer film that can be used as a hard mask with use of hydrolysis-condensation product of a hydrolyzable silane which also absorbs KrF laser. A resist underlayer film-forming composition for lithography comprising, as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1):RRSi(R)&#x2003;&#x2003;Formula (1)[where Ris an organic group of Formula (2): and is bonded to a silicon atom through a Si&#x2014;C bond; Ris an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3], and a ratio of sulfur atoms to silicon atoms is 7% by mole or more in the whole of the silane. A resist underlayer film obtained by applying the resist underlayer film-forming composition onto a semiconductor substrate and baking it.

Silicon-containing resist underlayer film-forming composition having phenyl group-containing chromophore

A resist underlayer film allows an excellent resist pattern shape to be formed when an upper resist layer is exposed to light and developed using an alkaline developing solution or organic solvent; and composition for forming the resist underlayer film. A resist underlayer film-forming composition for lithography, the composition including, as a silane, hydrolyzable silane, hydrolysis product thereof, hydrolysis-condensation product thereof, or combination, wherein the hydrolyzable silane includes hydrolyzable silane of Formula (1):RRSi(R)&#x2003;&#x2003;Formula (1)[where Ris an organic group of Formula (2):&#x2014;R&#x2014;R&#x2014;R&#x2003;&#x2003;Formula (2)(where R4 is optionally substituted C1-10 alkylene group; R5 is a sulfonyl group or sulfonamide group; and R6 is a halogen-containing organic group)]. In Formula (2), R6 may be a fluorine-containing organic group like trifluoromethyl group. A resist underlayer film obtained by applying the resist underlayer film-forming composition onto a semiconductor substrate, followed by baking. The underlayer film-forming composition may include acid as a hydrolysis catalyst, or water.

Silicon-containing resist underlayer film-forming composition having halogenated sulfonylalkyl group

A film-forming composition having favorable effects such as curability and embeddability and resist underlayer film for use in lithography process for semiconductor devices. The film-forming composition including, as silane, hydrolyzable silane, hydrolysis product thereof, or hydrolysis-condensation product thereof, wherein hydrolyzable silane includes hydrolyzable silane of Formula (1):RRSi(R)&#x2003;&#x2003;Formula (1)in Formula (1), Ris organic group of Formula (2) and is bonded to silicon atom through Si&#x2014;C bond: The film-forming composition, wherein the hydrolyzable silane is combination of hydrolyzable silane of Formula (1) with another hydrolyzable silane, wherein other hydrolyzable silane is at least one selected from group made of hydrolyzable silane of Formula (3):RSi(R)&#x2003;&#x2003;Formula (3)and hydrolyzable silane of Formula (4):RSi(R)Y&#x2003;&#x2003;Formula (4)Resist underlayer film, obtained by applying the resist underlayer film-forming composition on semiconductor substrate and baking.

Film-forming composition containing silicone having crosslinking reactivity

A resist underlayer film for use in lithography process which generates less sublimate, has excellent embeddability at the time of applying onto a substrate having a hole pattern, and has high dry etching resistance, wiggling resistance and heat resistance, etc. A resist underlayer film-forming composition including a resin and a crosslinkable compound of Formula (1) or Formula (2): in which Qis a single bond or an m1-valent organic group, Rand Rare each a Calkyl group or a Calkyl group having a Calkoxy group, Rand Rare each a hydrogen atom or a methyl group, Rand Rare each a Calkyl group or a Caryl group.

A composition for forming a resist underlayer film has excellent storage stability at normal temperature. A composition for forming a resist underlayer film for lithography including a nitrogen-containing compound having 2 to 6 substituents of the following Formula (1) which bond to nitrogen atoms in one molecule, a polymer, a compound that promotes a crosslinking reaction, and an organic solvent. The nitrogen-containing compound having 2 to 6 substituents of Formula (1) in one molecule is for example a glycoluril derivative of the following Formula (1A). In the formula, each Ris a methyl group or an ethyl group, and Rand Rare independently a hydrogen atom, a Calkyl group, or phenyl group.

Composition for forming resist underlayer film

A polymerizable composition suitable for producing a molded article that can maintain a high refractive index and a low Abbe's number and can be restrained from dimensional changes due to a high-temperature thermal history has (a) 100 parts by mass of a specific reactive silsesquioxane compound, (b) 10 to 500 parts by mass of a specific fluorene compound and (c) 1 to 100 parts by mass of a specific aromatic vinyl compound. A cured product can be obtained by curing the polymerizable composition.

Polymerizable composition comprising reactive silsesquioxane compound and aromatic vinyl compound

A resist underlayer film forming composition for lithography that can be used as a hard mask. The composition can improve pattern resolution due to having a trihalogenoacetamide skeleton. A resist underlayer film forming composition for lithography comprising a hydrolyzable silane, a hydrolysis product thereof, a hydrolysis condensate thereof, or a combination thereof as a silane, wherein the hydrolyzable silane comprises a silane having a halogen-containing carboxylic acid amide group.

Resist underlayer film forming composition for lithography containing hydrolyzable silane having halogen-containing carboxylic acid amide group

The present invention provides a resist underlayer film-forming composition for lithography for forming a resist underlayer film that can be used as a hard mask with use of hydrolysis-condensation product of a hydrolyzable silane which also absorbs KrF laser. A resist underlayer film-forming composition for lithography comprising, as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1):RRSi(R)&#x2003;&#x2003;Formula (1)[where Ris an organic group of Formula (2): and is bonded to a silicon atom through a Si&#x2212;C bond; Ris an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3], and a ratio of sulfur atoms to silicon atoms is 7% by mole or more in the whole of the silane. A resist underlayer film obtained by applying the resist underlayer film-forming composition onto a semiconductor substrate and baking it.

Silicon-containing resists underlayer film-forming composition having phenyl group-containing chromophore

A resist underlayer film composition for lithography, including: a silane: at least one among a hydrolyzable organosilane, a hydrolysis product thereof, and a hydrolysis-condensation product thereof, wherein the silane includes a silane having a cyclic organic group containing as atoms making up the ring, a carbon atom, a nitrogen atom, and a hetero atom other than a carbon and nitrogen atoms. The hydrolyzable organosilane may be a hydrolyzable organosilane of Formula (1), wherein, at least one group among R1, R2, and R3 is a group wherein a &#x2014;Si(X)3 group bonds to C1-10 alkylene group, and other group(s) among R1, R2, and R3 is(are) a hydrogen atom, C1-10 alkyl group, or C6-40 aryl group; a cyclic organic group of 5-10 membered ring containing atoms making up the ring, a carbon atom, at least one of nitrogen, sulfur or oxygen atoms; and X is an alkoxy group, acyloxy group, or halogen atom. 

Resist underlayer film forming composition containing silicon containing cyclic organic group having hetero atom

An additive for a resist underlayer film-forming composition containing a copolymer having structural units of Formulae (1) to (4), and a resist underlayer film-forming composition containing the additive: (where each Ris independently a hydrogen atom or methyl group, Ar is arylene group, Pr is a protecting group or a hydrogen atom, X is a direct bond or a &#x2014;C(&#x2550;O)O&#x2014;R&#x2014; group, Rconstituting the &#x2014;C(&#x2550;O)O&#x2014;R&#x2014; group is a Calkylene group, the alkylene group is bonded to a sulfur atom, Ris a hydrogen atom, methyl group, methoxy group, or halogeno group, Ris a Calkyl group in which at least one hydrogen atom is substituted with a fluoro group, and Z is an organic group having 4 to 7-membered ring lactone skeleton, adamantane skeleton, or norbornane skeleton).

Additive and resist underlayer film-forming composition containing the same

A method of producing a silane compound having a Formula (1) sulfonyl bond includes reacting a Formula (I) chlorosulfonyl compound with sodium sulfite in water as a solvent in the presence of a base, to produce a Formula (II) sulfinic acid sodium salt: and adding an aromatic hydrocarbon solvent to carry out azeotropic dehydration, and adding an aprotic polar solvent and a Formula (III) chloroalkylsilane compound. (wherein R, R, R, R, and Rare each independently a substituent selected from a hydrogen atom, halogen atom, alkyl group, alkoxy group, haloalkyl group, haloalkoxy group, cyano group, and nitro group, Rand Ror Rmay form &#x2014;CH&#x2550;CH&#x2014;CH&#x2550;CH &#x2014;together, Rand Rare each independently a Calkyl group, L is a single bond or saturated or unsaturated divalent Chydrocarbon group having a linear, branched, cyclic structure, or a combination thereof, and q is an integer of 1 to 3).

Method for producing silane compound having sulfonyl bond

A resist underlayer film forming composition for lithography, including: as a silane, at least one among a hydrolyzable organosilane, a hydrolysis product thereof, and a hydrolysis-condensation product thereof, wherein the silane includes the silane compound of Formula (1-a) or Formula (1-b): A method for producing a semiconductor device, including: applying the resist underlayer film forming composition onto a semiconductor substrate and baking the composition to form a resist underlayer film; applying a composition for a resist onto the film to form a resist film; exposing the resist film to light; developing the resist film after exposure to obtain a patterned resist film; etching the resist underlayer film according to a pattern of the patterned resist film; and processing the semiconductor substrate according to a pattern of the resist film and the resist underlayer film.

Resist underlayer film forming composition containing silicon having sulfone structure and amine structure

A resist underlayer film that can be used as a hardmask. A resist underlayer film forming composition for lithography, includes: as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1) or a hydrolyzable silane containing a combination of a hydrolyzable silane of Formula (1) with a hydrolyzable silane of Formula (2) in a content of less than 50% by mole in all silanes; Formula (1): RRSi(R)wherein Ris an organic group containing Formula (1-1), Formula (1-2), or Formula (1-3): a is 1 and b is an integer of 0 to 2, where a+b is an integer of 1 to 3;Formula (2): RRSi(R)wherein, Ris an organic group containing Formula (2-1), Formula (2-2), or Formula (2-3): a is 1 and b is an integer of 0 to 2, where a+b is an integer of 1 to 3.

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Funabashi, Japan

Kenji Takase