Sumitomo Electric Industries, Limited

Kenji Shinma

Masuhiro Natsuhara

Hirohiko Nakata

Akira Kuibira

Akira Mikumo

Koichi Kimura

Katsuhiro Itakura

Shigenobu Sakita

Daisuke Shimao

Nobuyoshi Tatoh

Koji Nishi

A wafer holding unit includes a disk-shaped ceramic substrate having a wafer mounting surface on an upper surface of the substrate, an RF electrode, for example, embedded within the substrate, a metal terminal inserted from a lower surface of the substrate, and a connecting terminal which electrically connects the RF electrode and the metal terminal with each other. The connecting terminal is constituted by a ceramic member and a metal layer. The ceramic member is made of the same material as the substrate and preferably has a truncated conical shape. The metal layer covers a surface of the ceramic member. An upper end of the metal layer is connected to the RF electrode, while a lower end of the metal layer is connected to the metal terminal with a metal member interposed therebetween.

Wafer holding body

Wafer holding unit

In the substrate processing apparatus, a ceramic module for mounting a substrate has a flat plate portion having an electric circuitry and a ceramic base body, and as at least a part of a surface of the flat plate portion other than the surface mounting the substrate is in contact with a chamber, it is supported by the chamber. Thus, a substrate processing apparatus can be provided which improves thermal uniformity, reduces cost, is suitable for size reduction of the apparatus and which can ease restrictions in mounting a power supply conductive member or the like.

Substrate processing apparatus

A low-radiation-rate film, made of a material whose radiation rate is lower than that of a heater substrate, is formed at least entirely over the surface of a heat-subject-placing surface of a heater substrate. By applying patterning to the low-radiation-rate film, the exposure rate of the heater substrate is varied such that the radiation rate becomes smaller from the center part of the heat-subject-placing surface toward the outer peripheral part thereof, thereby enabling a uniform temperature across the surface. In addition, the power supply is reduced, thermal stress is eliminated, the wiring design flexibility is increased, and the reliability is increased by preventing short-circuit accidents.

Heater and heating device

In an aluminum nitride sintered body, the bismuth and chlorine contents are restricted to be no more than fixed amounts. More specifically, in an aluminum nitride sintered body having aluminum nitride as its main component, the bismuth content in the aluminum nitride sintered body is no more than 30 ppm and the chlorine content is no more than 100 ppm. It would be preferable to form a resistance heating body on the aluminum nitride sintered body, and it would be preferable for the aluminum nitride sintered body to be used as a semiconductor heating part.

Aluminum nitride sintered body

To provide a semiconductor manufacturing device, which is provided with a wafer holder capable of improving the cooling rate of a heater and retaining the homogeneity of the temperature distribution of the heater at cooling time and which can markedly shorten the time period for treating a semiconductor wafer. The wafer holder includes the heaterfor carrying the semiconductor wafer thereon to heat the same, and the cooling blockfor cooling the heater. The cooling blockis arranged so as to come into and out of abutment against the backof the heater on the side opposed to the wafer carrying face, and its abutment faceto abut against the heaterhas a warpage of 1 mm or less. The cooling blockcan be provided therein with a passage for a cooling liquid. It is preferred that the passage has a sectional area of 1 mmor larger over 80% of its entire length, and that the area of the portion having the passage formed is 3% or larger of the entire area of the abutment face

Semiconductor manufacturing apparatus

A semiconductor heating apparatus, in which, when measuring the electrical properties of multiple chips formed on a large size wafer, only one or a several chips are heated uniformly, and the other chips are on standby at a low temperature. The semiconductor heating apparatus includes a heating part for mounting and heating the workpiece, a support part which supports the heating part, and a cooling module which contacts the support part. A plurality of heating parts and supporting parts are joined together. The workpiece mounting surfaces of the plurality of heating parts are preferably constructed in the same plane. In addition, there is preferably a thermal insulating material distributed underneath the support part. The heating part is preferably a ceramic heater.

Semiconductor heating apparatus

In the heater member for mounting an object of heating, at least a part of a surface other than a surface mounting a substrate such as a semiconductor wafer or a substrate for liquid crystal, is mirror-finished. Accordingly, power fed to the heater for heating to a prescribed temperature can be reduced, and thus, a heater member for mounting an object of heating and a substrate processing apparatus using the heater member, that can heat the object with higher efficiency, can be obtained.

Heater member for mounting heating object and substrate processing apparatus using the same

A sealed airtight container wherein the width of the exposed electrode part provided in a ceramic terminal part is enlarged, and the exposed electrode part is connected to a wiring part and the width of the wiring part is equal to the enlarged width of the electrode part. A sealed airtight container for an optical-semiconductor with a small heat generation in the metallized wiring layer, small power consumption and large current carrying capacity, and an optical-semiconductor module with a stable optical output can be obtained.

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Itami, Japan

Kenji Shinma