Tokyo Electron Limited

Nec Corporation

Kenji Sato

Masataka Goto

Taichi Hirano

A plasma processing apparatus includes a high frequency power supply turning a high frequency power ON/OFF and supplying the high frequency power to either one of upper and lower electrodes. A matching circuit and a power transmission line are provided between the high frequency power supply and the either one of the electrodes. A probe detector measures electrical characteristics on the power transmission line and generates measurement signals. A processing unit samples the measurement signals, generates sample values, The processing unit receives a pulse signal corresponding to ON/OFF switching of the high frequency power, generates sample values by sampling the measurement signals at a sampling interval for a period after the lapse of a mask period from an ascending timing thereof until a descending timing thereof, and selects sample values obtained through the last one or more sampling with respect to the descending timing, as detection values.

Plasma processing apparatus and probe apparatus

A feeder rod that transmits radio-frequency power via a matcher to a susceptor used in plasma generation that is disposed inside a processing chamber where a wafer undergoes a predetermined type of plasma processing, includes as an integrated part thereof electrical characteristics measurement probes. The integrated feeder rod unit can be detachably installed as a whole between the matcher and the processing chamber.

Plasma processing apparatus and feeder rod used therein

A plasma processing apparatus includes a radio frequency generator capable of adjusting a target output power level based on the set power level and the offset level to output radio frequency power; a chamber in which a plasma process is performed; and a power detection unit for measuring radio frequency power level fed to the matching unit. The plasma processing apparatus further includes a generator control unit for controlling the radio frequency power such that the radio frequency power level fed to the matching unit reaches the set power level by calculating the offset level based on the difference between the set power level and the power level measured by the power detection unit and transmitting the set power level and the offset level in digital form to the data input terminal of the radio frequency generator.

Plasma processing apparatus, radio frequency generator and correction method therefor

An RF supply system is to be connected to an RF electrode disposed outside or inside a process chamber to assist a plasma process performed in the process chamber. This system includes an RF power supply, a matching unit, and an impedance converter. The RF power supply is configured to supply an RF power for plasma generation to the electrode through a transmission path. The matching unit is disposed on the transmission path between the RF power supply and the electrode, and configured to match a load impedance viewing from the RF power supply with an impedance of the RF power supply side. The impedance converter is disposed on the transmission path between the matching unit and the electrode, and configured to convert a load impedance viewing from the matching unit to an impedance higher than an actual impedance on the electrode side.

RF supply system and plasma processing apparatus

In an optical transmitting or receiving apparatus, a plurality of replaceable electro-optic converters or a plurality of replaceable opto-electric converters are provided in correspondence with optical transmission lines.

Growing community of inventors

Nirasaki, Japan

Kenji Sato