Sumitomo Electric Industries, Limited

Sumitomo Electric Printed Circuits, Inc.

Kenji Ohki

Issei Okada

Motohiko Sugiura

Yoshio Oka

Takashi Iwasaki

Yasuhiro Iguchi

Manabu Shiozaki

Akira Yamaguchi

Takashi Kasuga

Atsushi Kimura

Shigeru Sawada

Hiroya Kimura

A base material for a printed circuit board includes: an insulating base film; and a sintered body layer of metal particles layered on one side surface of the base film; wherein an arithmetic mean roughness (Sa) of a surface of the sintered body layer that is opposite to the base film is greater than or equal to 0.005 &#x3bc;m and less than or equal to 0.10 &#x3bc;m.

Base material for printed circuit board and printed circuit board

According to the present invention, a base material for a printed circuit board includes: an insulating base film; and a metal layer that is layered on at least one surface of the base film and that includes copper as a main component, wherein in a content per unit area in a region of 100 nm or less from an interface of the metal layer with the base film, Cr&#x3c;0.1 mg/m, and Ni&#x3c;0.1 mg/m, wherein an arithmetic mean roughness (Sa) of the surface of the base film on which the metal layer is layered is less than 0.10 &#x3bc;m.

A coating liquid for forming a conductive layer according to the present invention is a coating liquid for forming a conductive layer, the coating liquid containing fine metal particles, a dispersant, and a dispersion medium. In the coating liquid for forming a conductive layer, the fine metal particles contain copper or a copper alloy as a main component, the dispersant is a polyethyleneimine-polyethylene oxide graft copolymer, a polyethyleneimine moiety in the graft copolymer has a weight-average molecular weight of 300 or more and 1,000 or less, a molar ratio of polyethylene oxide chains to nitrogen atoms in the polyethyleneimine moiety is 10 or more and 50 or less, and the graft copolymer has a weight-average molecular weight of 3,000 or more and 54,000 or less.

Coating liquid for forming conductive layer, method for producing conductive layer, and conductive layer

A powder for a conductive material according to an embodiment of the present invention includes a large number of particles that contain copper as a main component and having an average primary particle diameter of 1 nm or more and 200 nm or less. The particles contain titanium on surfaces or inside thereof, and a content of the titanium is 0.003 atomic percent or more and 0.5 atomic percent or less.

Powder for conductive material, ink for conductive material, conductive paste, and method for producing powder for conductive material

A compound semiconductor wafer providing an InGaAs light receiving layer having superior crystal characteristic suitable for a near-infrared sensor includes an InAsPgraded buffer layer consisting of a plurality of layers positioned on an InP substrate and an InAsPbuffer layer positioned on the graded buffer layer, sandwiched between said InP substrate and the InGaAs layer, wherein maximum value of PL light emission intensity at an interface of each of the layers of the graded buffer layer and the buffer layer is, at every interface, smaller than 3/10 of the maximum PL light emission intensity of the buffer layer.

Compound semiconductor wafer and manufacturing method thereof

A semiconductor light receiving element has a semiconductor portion. The semiconductor portion includes a substrate, a light detecting portion, and a filter portion. The substrate, the light detecting portion, and the filter portion are provided sequentially in a direction of a predetermined axis. The light detecting portion has a light absorbing layer including a III-V semiconductor layer, a window layer including a III-V semiconductor layer, and an anode semiconductor region. The light absorbing layer is an n or i conductivity type semiconductor layer. The light absorbing layer is provided between a III-V semiconductor layer and the window layer. The light detecting portion is provided on one face of the semiconductor substrate with the III-V semiconductor layer interposed therebetween. The filter portion includes InGaAsP semiconductor layers and III-V semiconductor layers.

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Koka, Japan

Kenji Ohki