Fujitsu Corporation

Canon Kabushiki Kaisha

501 Fujitsu Limited

Kenji Nakagawa

Tamae Haruki

Masao Taguchi

Hiroyuki Tanaka

Satoru Asai

Isamu Hanyu

Kazuhiko Sumi

Yuichiro Yanagishita

Toshiaki Kawabata

Seiichiro Yamaguchi

Masao Kanazawa

Takao Yonehara

Kiyofumi Sakaguchi

Nobuo Kawase

Kenichi Kawashima

Yasuko Tabata

Ei Yano

Yuji Furumura

Hiroshi Kudo

Fumitake Mieno

Takashi Eshita

Kenji Sugishima

Masao Yamada

Akira Oikawa

Katsuyoshi Kobayashi

Masafumi Nakaishi

A method of manufacturing a semiconductor chip including an integrated circuit and a through-electrode penetrating a semiconductor layer includes the steps of preparing a first substrate including a release layer and a semiconductor layer formed on the release layer; forming an integrated circuit in the semiconductor layer; forming, in the semiconductor layer, a hole or groove having a depth that does not reach the release layer; filling the hole or the groove with an electrical conductor; bonding a second substrate to the semiconductor layer to form a bonded structure; separating the bonded structure at the release layer to prepare the second substrate to which the semiconductor layer is transferred; and removing at least a portion of the reverse surface side of the semiconductor layer exposed by the separation to expose the bottom of the electrical conductor.

Method of manufacturing semiconductor chip

A method of manufacturing a semiconductor device includes the steps of forming a plurality of first integrated circuits on the surface side of a first semiconductor substrate; forming a plurality of second integrated circuits in a semiconductor layer that is formed on a release layer provided on a second semiconductor substrate; bonding the two semiconductor substrates so that electrically bonding portions are bonded to each other to form a bonded structure; separating the second semiconductor substrate from the bonded structure at the release layer to transfer, to the first semiconductor substrate, the semiconductor layer in which the plurality of second integrated circuits are formed; and dicing the first semiconductor substrate to obtain stacked chips each including the first integrated circuit and the second integrated circuit.

Method of manufacturing semiconductor device

A semiconductor device includes a bonding pad formed on a substrate and a mark region formed on the substrate right underneath the bonding pad, such that the mark region is covered by the bonding pad.

IC bonding pad combined with mark or monitor

An optical exposure method in photolithography applied for precise processing when semiconductor devices are produced. A pattern on a photomask is projected and exposed on a register on a base plate with an exposure device including a deformation illumination system, a photomask and a projection lens. The deformation illumination system is composed of a light source, a diaphragm and a condenser lens, and the diaphragm is provided with a linear through-hole. The optical exposure method uses a ray of linear light for illumination or two rays of linear light for illumination that are parallel with the pattern. The two rays of linear light are symmetrical with respect to an optical axis. These rays are parallel with the pattern in a position separate from the optical axis of the exposure device when the photomask pattern is a line and space pattern.

Optical exposure method

A method of forming a resist pattern including the steps of: forming a resist film by coating resist on the surface of a member to be processed, the resist containing a composition A capable of increasing the volume by chemical reaction; exposing and developing the coated resist film to form a pattern having an opening; and chemically reacting fluid containing a composition B with the composition A by contacting the fluid with the composition A to change the size of the opening of the resist film, the composition B being capable of increasing the volume of the composition A by chemical reaction with the composition A. It is possible to form a fine resist pattern by a simple method.

Method of making resist patterns

The present invention relates to a method of manufacturing a semiconductor device including a step of exposing a resist by use of an exposure mask. An object of the present invention is to facilitate a level adjustment of the reticle and thus automatically determine an optimum focus. The present invention has steps of providing a reticle with a plurality of inspection patterns, which are positioned within a dicing line area around a semiconductor integrated circuit forming area on the reticle, and of which each has a size such that their transferred patterns are changed in shape according to an amount of deviation in focus, and exposing a resist by use of the reticle.

A pattern forming method includes the steps of preparing an underlie layer having a surface to be processed; coating a resist film on the underlie layer, the resist film including a substance capable ot absorbing light applied during exposure, thereby capable of attenuating light reflected from the surface of said underlie layer during the exposure, in comparison to a resist film not containing the substance; and transferring a pattern of a photomask onto the resist by using a modified illumination system, the photomask, and a projecting lens, the modified illumination system radiating principal light from the direction offset from an optical axis of a condenser lens. Exposure is performed by relieving the influence of light reflection from an underlie layer surface by using resists whose transmittance have been adjusted, and by using a stepper with a modified illumination system. A sufficient depth of focus is obtained and the resolution of the resist is substantially improved. A resist pattern of a good shape can be obtained by relieving the influence of light reflection from the underlie layer surface.

Deep UV photolithography with reduced halation

A mask includes a transparent layer which is transparent with respect to a light which is used for an exposure, and a mask pattern layer which is formed on the transparent layer. At least a portion of the mask pattern layer is made up solely of a phase shift layer for transmitting the light, so that a phase shift occurs between a phase of the light transmitted through the phase shift layer and a phase of the light transmitted through a portion of the mask having no phase shift layer.

Mask producing method

A mask for forming a desired pattern on the image plane is divided into a number of cell areas. Each cell is assigned a uniform characteristic. Each cell area is assigned a particular light transmission characteristic to form a starting pattern which may be the desired target pattern itself. The light transmission characteristic of each cell area is changed randomly. The light intensity distribution is simulated to select only the patterns having a good performance. Such characteristic change is continued until the inheritance operation is converged and a final pattern is obtained. This final pattern is used as the mask pattern. The above process may also be applied to determining the shape of an aperture stop and a light source.

Fine pattern lithography with positive use of interference

A mask includes a transparent layer which is transparent with respect to a light which is used for an exposure, and a mask pattern layer which is formed on the transparent layer. At least a portion of the mask patterns layer is made up solely of a phase shift layer for transmitting the light, so that a phase shift occurs between a phase of the light transmitted through the phase shift layer and a phase of the light transmitted through a portion of the mask having no phase shift layer.

Pattern forming method using mask

A reticle and a method of fabricating the same for projecting a fine pattern on an object surface comprises: a transparent substrate; a first type phase-shifter selectively patterned and deposited on the substrate producing a phase difference between the light passing therethrough and the light passing through the other areas without phase-shifter; and a second type phase-shifter selectively patterned and forming a groove in the substrate producing a phase difference between the light passing therethrough and the light passing through the other areas without phase-shifter. The reticle may include a patterned shield layer which interrupts transmission of light, and the phase difference of the first and second type phase-shifters is many times selected substantially equal to a half wavelength of light. Another type of a reticle comprises: a transparent substrate; a phase-shifter of a first groove; and another phase-shifter of a second deeper groove formed in the first groove.

Reticle with phase-shifters and a method of fabricating the same

A mask includes a first layer which is transparent with respect to an exposure light, and a phase shift mask pattern which is formed on the transparent layer. The pattern includes one or more phase shift regions adapted for transmitting the exposure light impinging thereon and shifting the phase of the transmitted light relative to the phase of light which passes through a portion of the mask having no phase shift layer.

Growing community of inventors

Isehara, Japan

Kenji Nakagawa