Tokyo Electron Limited

Tanaka Kikinzoku Kogyo K.k.

Kenji Matsuda

Kippei Sugita

Junichi Taniuchi

Muneo Harada

Hiroyuki Hashimoto

Hitoshi Kubo

Yuichi Makita

Dai Shinozaki

Hidekazu Matsuda

Yusuke Ohshima

A semiconductor device includes a semiconductor chip which can be a heat-generating semiconductor chip or a semiconductor relay substrate in which an integrated circuit or wiring is built in. A sintered-silver-coated film is adhered on a surface layer part of the semiconductor substrate, interposed by a silicon oxide film. A heat-dissipating fin (heat sink), which may be copper or aluminum, is bonded on the sintered-silver-coated film, interposed by an adhesive layer.

Semiconductor device and heat-dissipating mechanism

The method includes forming a hole penetrating from one surface of a substrate to an electrode formed on the other surface of the substrate; forming an organic insulating film in the hole; removing at least a part of the organic insulating film formed in a bottom portion of the hole and not the organic insulating film formed on a side wall portion of the hole, to expose the electrode; cleaning an exposed surface of the electrode by using plasma of an inert gas; filling a conductive metal in the hole; removing at least a part of a surface of the organic insulating film by the reaction of oxygen plasma; and annealing the substrate in a dysoxidative atmosphere.

Method of manufacturing semiconductor device

Growing community of inventors

Nirasaki, Japan

Kenji Matsuda