Kyocera Corporation

Kenji Kitazawa

Shinichi Koriyama

Hidehiro Minamiue

Hiroshi Aida

Naoyuki Shino

Takanori Ikuta

Hiroyuki Mori

Mikio Fujii

Kazuhiko Mikami

Shigeki Morioka

Hiroshi Uchimura

Yasunori Kawanabe

Kazuhiro Kuchimachi

Masanobu Ishida

Koichi Nagasaki

Satoru Tomie

Saburo Nagano

Koichi Nagata

Takanori Kubo

Akira Nakayama

Yoshinobu Sawa

Hiroshi Kuroki

Yoshihiro Miyawaki

A high-frequency module is constituted by mounting a surface-acoustic-wave device on an insulating substrate constituting a surface-acoustic-wave-device mount substrate in which insulating substrate a plurality of insulating layers are laminated. A ring-shaped ground electrode of the insulating substrate is electrically connected to a predetermined conductor pattern formed on a back surface of the insulating substrate through a plurality of via-conductors including a via-conductor directly connected to the electrode. Among the plurality of via-conductors, via-conductors other than the via-conductor directly connected to the ring-shaped ground electrode are disposed outside a ring-shaped electrode region, as seen in plan view, where the ring-shaped ground electrode is formed.

Surface-acoustic-wave-device mount substrate, high-frequency module using the same, and communication apparatus

A high-frequency module has a structure wherein transmitting filters, receiving filters and high-frequency power amplifiers are mounted on a multilayered substrate and wherein matching circuits are inserted between input terminals of the receiving filters and output terminals of the transmitting filters. Transmission lines as components of the matching circuits, and the like are formed internally of the multilayered substrate. Thus, the whole body of the high-frequency module can be downsized.

High-frequency module and communication apparatus

There is presented a high frequency module, in which a recessfor mounting power amplifier device is formed on a lower surface of a dielectric substrate, and a recessfor mounting surface acoustic wave filter is formed on an upper surface of the dielectric substrate, and a power amplifier deviceand a surface acoustic wave filterare mounted through conductive bumpsandon the recessesand, respectively. In addition, a through-hole conductorwhose one end is exposed at the lower surface of the dielectric substrateis provided between the recessesand. The exposed end of the through-hole conductoris attached to a thermal dissipation conductoron an upper surface of an external electric circuit boardthrough a brazing material

High frequency module

A cutoff waveguide path is provided in a part of a dielectric waveguide comprising a pair of main conductive layers formed on an upper and a lower surfaces of a dielectric and groups of conductive vias arranged in the direction of signal transmission with a space of a distance less than &#xbd; of a signal wavelength between the conductive vias, and provided in the cutoff waveguide path is a resonator having dielectric vias formed of a dielectric having a higher dielectric constant than that of a dielectric forming the dielectric waveguide. With this construction, a dielectric waveguide type filter easily designed and manufactured can be obtained.

Dielectric waveguide type filter and branching filter

A wiring board includes a dielectric substrate, a signal transmission line formed on one surface of the dielectric substrate, a grounded layer formed on the other surface of the dielectric substrate, and a connection portion for connecting portion for connecting the signal transmission line to a waveguide, the connection portion being formed on the grounded layer. The grounded layer has a slot at a position opposed to an end of the signal transmission line. The connection portion includes a first dielectric portion disposed to cover the slot of the ground layer, a second dielectric portion laminated on the first dielectric portion, and a patch conductor provided at a position opposed to said slot on an interface between the first dielectric portion and the second dielectric portion. The wiring board enables the signals to be efficiently transmitted from the signal transmission line to the waveguide with a small loss and a small reflection.

Multi-layered wiring board for slot coupling a transmission line to a waveguide

A high frequency package is arranged such that it comprises a dielectric substrate provided with an input terminal and an output terminal, a high frequency element mounted on the surface of the dielectric substrate, and a high frequency line formed on the dielectric substrate for connecting the high frequency element with the input terminal and with the output terminal, wherein a transmission characteristic from the input terminal to the output terminal has the property of cyclically varying in relation to frequency. The length of the high frequency line is regulated such that the frequency of signals transmitted along the high frequency line is located at a part of the cyclic variation curve of the transmission characteristic where transmittance is large. By arranging the structure in such a manner, loss of high frequency signals having frequencies of 10 GHz or more can be reduced.

High frequency package, wiring board, and high frequency module having a cyclically varying transmission characteristic

A high frequency wiring board having a high frequency transmission line having a signal conductor line formed on the surface of a dielectric board and a grounding layer formed inside or on the reverse surface of the dielectric board parallel to the signal conductor line, and a connecting terminal portion provided at a terminal end of the high frequency transmission line and including connecting grounding conductors formed with spacing on both sides of the signal conductor line and through conductors for connecting the connecting grounding and the grounding layer. The distance between the through conductors and an end side surface of the dielectric board is not more than 0.3 times the signal wavelength, in the dielectric board, of a high frequency signal.

High frequency wiring board and its connecting structure

A high-frequency module comprising a high-frequency device-mounting package and an external circuit board, wherein said high-frequency device-mounting package includes a dielectric substrate having a first grounding layer contained therein, said dielectric substrate mounting a high-frequency device on one surface thereof and having, formed on one surface thereof, first high-frequency signal transmission lines connected to said high-frequency device, and having, formed on the other surface thereof, second high-frequency signal transmission lines coupled to said first high-frequency signal transmission lines; said external circuit board is constituted by a dielectric board having third high-frequency signal transmission lines and a second grounding layer, said third high-frequency signal transmission lines being formed on one surface of said dielectric board, and said second grounding layer being formed on the other surface of said dielectric board or inside thereof; and said high-frequency device-mounting package and said external circuit board are arranged side by side, and the second high-frequency signal transmission lines of the high-frequency package are electrically connected to the third high-frequency signal transmission lines of the external circuit board through linear electrically conducting members. The patterns of the second high-frequency signal transmission lines on the side of the high-frequency device-mounting package can be easily aligned with the patterns of the third high-frequency signal transmission lines on the side of the external circuit board, effectively reducing the transmission loss at the junction portions of the lines.

High-frequency module using slot coupling

A high-frequency module in which a plurality of cavities are formed on the surface of a dielectric board, internal high-frequency signal transmission lines are connected to high-frequency devices in the cavities and are located in the cavities, the internal high-frequency signal transmission lines being electromagnetically coupled to the external high-frequency signal transmission line, and the high-frequency devices in the cavities are connected to each other relying on the electromagnetic coupling through the external line. The high-frequency module enables high-frequency signals to be transmitted among the high-frequency devices with a small loss. The module has a very simple structure, and is cheaply produced, and offers an advantage that it can be easily obtained in a small size.

High-frequency module coupled via aperture in a ground plane

A high-frequency package comprising a dielectric substrate, a high-frequency element that operates in a high-frequency region and is mounted in a cavity formed on said dielectric substrate, and a microstrip line formed on the surface or in an inner portion of said dielectric substrate and electrically connected to said high-frequency element, wherein a signal transmission passage of a waveguide is connected to a linear conducting passage or to a ground layer constituting the microstrip line. In the junction portion of the waveguide, for example, an end of the linear conducting passage is electromagnetically opened, so that the end portion works as a monopole antenna inside the waveguide that is connected. The high-frequency package makes it possible to connect the waveguide without adversely affecting the sealing of the high-frequency element and to transmit high-frequency signals with a low loss.

High frequency package

A structure for mounting a high-frequency device on an insulating board having a circuit on a top surface and transmitting signals to the high-frequency device. The high-frequency device is sealed within a cavity on a top surface of a dielectric board. The dielectric board has a first signal transmission line on its top surface and a second signal transmission line on its bottom surface, the first and second signal transmission lines overlapping each other over a portion where the signal is transmitted through coupling of the first and second signal transmission lines. A recess is formed at the top surface of the insulating board below the overlapping portion of the first and second signal transmission lines to suppress transmission loss of the high-frequency signal between the first and second signal transmission lines. The recess may be filled with air or a material having a dielectric constant low than that of the insulating board.

Structure for mounting a high-frequency package

A high-frequency semiconductor device contains a semiconductor element in a cavity formed by a dielectric board and a cap. A first high-frequency transmission line connected to the semiconductor element is formed on the surface of said dielectric board in said cavity and a second high-frequency transmission line is formed on the bottom surface of said dielectric board, so that said first high-frequency transmission line and said second high-frequency transmission line are electromagnetically coupled together. In this semiconductor devise in which the first transmission line and the second transmission line are electromagnetically coupled together, the transmission lines need not be passed over the side wall of the cap, and neigther reflection loss or radiation loss takes place on the side wall. Besides, transmission loss of high-frequency signals is caused by neigther through-holes or via-holes, and is effectively suppressed.

High-frequency semiconductor device and mounted structure thereof

A wafer support member comprises a base made of ceramics with thickness of 3 mm or more, a metallic electrode plate with thickness of 0.5 mm or more bonded onto the base, and an attraction surface composed of an aluminum nitride film with thickness of 0.01 to 0.5 mm coated on the surface of the electrode plate. The electrode plate functions as a plasma generating electrode when high frequency voltage is applied to the electrode plate and as an electrostatic attraction electrode when direct-current high voltage is applied to the electrode plate. Also, a wafer holding device for holding a wafer such as semiconductor wafer and glass substrate for liquid crystal is disclosed. The wafer holding device comprises a base body of aluminum nitride sintered body containing resistance heating elements therein. Lead terminals for feeding power to the resistance heating elements are formed in the lower surface of the base body. In one feature, at least the lead terminals and junction thereof are coated with a ceramic film composed of any one of silicon carbide, silicon nitride, sialon, and aluminum nitride. In another feature, the base body has a flat surface for forming an attraction surface, an outer circumference and penetration holes. Each of the penetration holes opens in the flat surface, and has an inner wall. An aluminum nitride film covers the flat surface, the outer circumference, and the inner wall of each of the penetration holes.

Wafer support member

A ceramic resistor comprising chiefly an aluminum nitride, and an electrostatic chuck using the ceramic resistor as a resistor layer. The ceramic resistor comprises chiefly an aluminum nitride crystal phase, and is doped with at least one kind of atoms selected from the group consisting of elements of the Groups 2b, 4b and 6b of periodic table, and exhibits a volume resistivity of not larger than 10.sup.14 .OMEGA.-cm at 25.degree. C.

Growing community of inventors

Kokubu, Japan

Kenji Kitazawa