Hitachi-kokusai Electric Inc.

Kokusai Electric Corporation

Sony Corporation

Japan Aviation Electronics Industry, Limited

Sanyo Electric Co., Ltd.

Renesas Electronics Corporation

National Institute of Advanced Industrial Science and Technology

Central Glass Company, Limited

Ulvac, Inc.

Mitsubishi Denki Kabushiki Kaisha

Panasonic Corporation

Tokyo Electron Limited

Showa Denko K.k.

Fujitsu Semiconductor Limited

L'air Liquide, Soci&#xe9;t&#xe9; Anonyme Pour L'etude Et L'exploitation Des Proc&#xe9;d&#xe9;s Georges Claude

Kenji Kameda

Atsushi Sano

Kimihiko Nakatani

Masaya Nagato

Yuji Urano

Jun Sonobe

Yudai Tadaki

Kenji Yamazaki

Yushin Takasawa

Tsukasa Kamakura

Katsuo Sakai

Hitoshi Murata

Kazuomi Sato

Tatsuru Matsuoka

Akiou Kikuchi

Kaoru Abe

Koei Kuribayashi

Natsuo Koda

Akira Sekiya

Etsuo Wani

Seiji Okura

Hisanori Nagata

Masaji Sakamura

Hayato Nakamura

Yoshiro Hirose

Mitsuharu Ohki

Ryuji Yamamoto

Shuhei Saido

Hiroshi Ashihara

Satoshi Shimamoto

Naonori Akae

Kiyohiko Maeda

Takafumi Sasaki

Kazuhiro Harada

Takatomo Yamaguchi

Takeo Hanashima

Yutaka Ohira

Motomu Degai

Hiroaki Hiramatsu

Shintaro Kogura

Yasutoshi Tsubota

Masayuki Shiratori

Yuki Mitsui

Shinya Ebata

Shin Hiyama

Ryota Horiike

Yuichi Ueda

Jie Wang

Sadao Nakashima

Kunihiro Yamauchi

Yasunori Ohto

Junpei Ito

Kotaro Murakami

Osamu Morita

Taisuke Yonemura

Noriyuki Isobe

Akihito Yoshino

Takaichi Teramoto

Shogo Otani

Koichi Honda

Naosuke Asari

Sadao Hisakado

Shin Sone

Kotaro Konno

Yuta Takeda

Naoko Kitagawa

Shinichiro Mori

Mamoru Umemoto

Takahiro Maeda

Hiroto Yamagishi

Masanori Watari

Koichi Oikawa

Kazuhiro Shimoda

There is provided a technique that cleans a member in a process container by performing a cycle a predetermined number of times, the cycle including: (a) separately supplying a cleaning gas and an additive gas that reacts with the cleaning gas, respectively, from any two supply parts among at least three supply parts into the process container after processing a substrate; and (b) separately supplying the cleaning gas and the additive gas, respectively, from any two supply parts among the at least three supply parts into the process container, wherein at least one selected from the group of the cleaning gas and the additive gas is supplied from different supply parts in (a) and (b).

Method of cleaning member in process container, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a technique which includes: forming a first film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a first cycle a predetermined number of times, the first cycle including non-simultaneously performing: forming a first layer containing silicon, oxygen, carbon and nitrogen by simultaneously supplying first aminosilane and an oxidant to the substrate; and performing a first modifying process to the first layer under a first temperature; and performing a second modifying process to the first film under a second temperature that is higher than the first temperature.

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a technique that includes filling a concave portion formed on a surface of a substrate with a first film and a second film by performing: (a) forming the first film having a hollow portion using a first precursor so as to fill the concave portion formed on the surface of the substrate; (b) etching a portion of the first film which makes contact with the hollow portion, using an etching agent; and (c) forming the second film on the first film of which the portion is etched, using a second precursor, wherein (b) includes performing, a predetermined number of times: (b-1) modifying a portion of the first film using a modifying agent; and (b-2) selectively etching the modified portion of the first film using the etching agent.

A busbar is placed on an anvil, and a core wire of a cable is placed on the busbar. While the core wire is pressed onto the busbar using a horn chip, ultrasonic vibration is given to the core wire to join the core wire to the busbar. The horn chip has two flat portions and a recessed portion located between the flat portions. When the core wire is pressed onto the busbar using the horn chip, each of the flat portions and the busbar sandwich a part of the core wire therebetween while the recessed portion and the busbar put a remaining part of the core wire therebetween. Each of the sandwiched parts of the core wire does not reach an outer end of the corresponding flat portion to leave a space between the corresponding flat portion and the busbar.

Method of manufacturing cable assembly, horn chip used in the method and cable assembly manufactured by the method

There is provided a technique that includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a precursor gas to the substrate in a process container of a substrate processing apparatus via a first pipe made of metal; (b) supplying an oxygen-containing gas to the substrate in the process container via a second pipe made of metal, wherein a fluorine-containing layer is continuously formed on an inner surface of the second pipe; and (c) supplying a nitrogen-and-hydrogen-containing gas to the substrate in the process container via the second pipe.

Method of manufacturing semiconductor device, substrate processing apparatus, and method of processing substrate

A wire includes a core wire and an insulation coating that covers an outer periphery of the core wire. The core wire includes a distal end region containing a distal end surface of the core wire, and a body region being a part other than the distal end region. The distal end region includes a first distal end region containing the distal end surface, and a second distal end region located between the first distal end region and the body region. The insulation coating includes a distal end coating part that covers an outer periphery of the first distal end region in a tube shape, an insulation coating body that covers an outer periphery of the body region in a tube shape, a coating joint part that joins the distal end coating part and the insulation coating body together.

Wire, wire with terminal, harness, manufacturing method for wire, and manufacturing method for wire with terminal

There is provided a technique that includes forming a film containing silicon, oxygen, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times, the cycle including: forming a first layer containing silicon, carbon, and nitrogen by performing a set a predetermined number of times, the set including: supplying a first precursor, which contains at least two Si&#x2014;N bonds and at least one Si&#x2014;C bond in one molecule, to the substrate; and supplying a second precursor, which contains nitrogen and hydrogen, to the substrate; and forming a second layer by supplying an oxidant to the substrate, to thereby oxidize the first layer.

A method of manufacturing a semiconductor device includes (a) under a first process condition, supplying a purge gas containing hydrogen and oxygen to a process chamber from which an oxide film adhering to an internal member is removed by a cleaning gas containing a halogen element and exhausting the purge gas from the process chamber; and (b) under a second process condition differing from the first process condition, supplying the purge gas to the process chamber and exhausting the purge gas from the process chamber after performing (a), wherein the first process condition is a process condition under which reactivity of the halogen element, which remains within the process chamber when the cleaning gas is supplied to the process chamber, with the purge gas is higher than reactivity of the halogen element with the purge gas under the second process condition.

Method of manufacturing semiconductor device and recording medium

A wire includes a core wire, an insulating coating that covers an outer periphery of a non-distal end region as a part of the core wire other than the distal end region, and a distal end seal part that is disposed separately from the insulating coating and seals the distal end part of the distal end region of the core wire. The core wire is exposed between the distal end seal part and the insulating coating. The distal end seal part includes a tubular distal end cover part that covers an outer periphery of the distal end part and a welded part that is crushed in an orthogonal direction orthogonal to a wire direction and is closed by welding.

Harness with a wire terminal

There is provided a cleaning technique that includes supplying a hydrogen fluoride gas into a process vessel, in which a process of forming an oxide film containing at least one of carbon and nitrogen on a substrate has been performed, to remove a deposit containing at least one of carbon and nitrogen adhered to an interior of the process vessel, wherein the act of supplying the hydrogen fluoride gas is performed under a condition in which an etching rate of the deposit adhered to the interior of the process vessel is higher than an etching rate of a quartz member in the process vessel.

Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a method of forming a film with improved step coverage on a substrate by performing, a predetermined number of times, forming a first layer by supplying a halogen-free precursor having a first chemical bond cut by thermal energy at a first temperature and a second chemical bond cut by thermal energy at a second temperature lower than the first temperature and having a ratio of the number of first chemical bonds to the number of second chemical bonds in one molecule thereof, the ratio being equal to or more than 3, to the substrate at a temperature equal to or higher than the second temperature and lower than the first temperature.

According to one aspect of the present disclosure, there is provided a cleaning method including: cleaning a component in which a deposit adhering to the component constituting an apparatus is removed by supplying and discharging a cleaning gas, wherein the act of cleaning includes controlling the apparatus so that a signal, which indicates a concentration of a predetermined gas generated by a reaction of the deposit and the cleaning gas, reaches a predetermined upper limit value or less and then stays within a range between the predetermined upper limit value and a predetermined lower limit value for a predetermined time period.

Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus, recording medium, and cleaning completion determining method

A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: supplying a precursor to the substrate in a process chamber and exhausting the precursor from a first exhaust system; and supplying a reactant to the substrate in the process chamber and exhausting the reactant from a second exhaust system. In the forming of the film, when the precursor does not flow through the first exhaust system, a deactivator that is a material different from the reactant is directly supplied from a supply port provided in the first exhaust system into the first exhaust system.

There is provided a cleaning method improving cleaning efficiency in a process container after an oxygen-containing film forming process is having performed, including: (a) supplying at least a hydrogen fluoride gas into the process container; and (b) supplying an alcohol into the process container in a state where supply of the hydrogen fluoride gas into the process container is stopped, wherein (a) and (b) are continuously performed without providing an intermittent period therebetween.

Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus, and a non-transitory computer-readable recording medium

An etching fault is suppressed by use of an etching gas containing iodine heptafluoride. Provided is an attached substance removing method of removing an attached substance containing an iodine oxide attached to a component included in a chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas. Also provided is a dry etching method, including the steps of supplying an etching gas containing an iodine-containing gas into a chamber to perform etching on a surface of a substrate; and after the etching is performed on the surface of the substrate, removing an attached substance containing an iodine oxide attached to a component included in the chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas.

Method for removing adhering matter and dry etching method

Growing community of inventors

Toyama, Japan

Kenji Kameda