Tokyo Electron Limited

Kenichiro Nakamura

Takari Yamamoto

Hiroshi Koizumi

Hiroki Endo

Noriiki Masuda

Satoru Teruuchi

Kenichiro Yamada

A temperature control method of controlling a temperature of a semiconductor wafer mounted on a mounting table includes a supply process of supplying, in a state that a supply of a power to a heater configured to heat the mounting table is stopped or the power is maintained to be constant, a heat transfer gas into a gap between the semiconductor wafer and the mounting table; a measurement process of measuring a temperature variation of the mounting table due to heat exchange between the semiconductor wafer and the mounting table through the heat transfer gas; a calculation process of calculating a correction value based on the temperature variation of the mounting table; and a control process of starting the supply of the power and controlling the power such that the temperature of the mounting table reaches a target temperature corrected with the correction value.

Substrate processing apparatus and substrate processing method

A substrate processing system includes a stage on which a substrate is placed, a heater configured to heat the substrate by being supplied with power, a power supply part configured to supply power to the heater, a sensor configured to measure a resistance value of the heater, and a controller. The controller is configured to: store a conversion table in which a plurality of resistance values are associated with a plurality of temperatures; and acquire a reference resistance value measured by the sensor when a heater temperature is equal to a reference temperature. The controller is further configured to: acquire a temperature adjustment resistance value measured by the sensor after the substrate is heated by the heater; and control the power supply part based on the conversion table, the reference temperature, the reference resistance value, and the temperature adjustment resistance value.

Substrate processing system and substrate processing method

A substrate processing system includes a substrate processing apparatus and a control device. The substrate processing apparatus includes a chamber, and a placing table provided inside the chamber. The placing table places a substrate thereon, and includes a base and an electrostatic chuck provided on an upper surface of the base. The electrostatic chuck has a plurality of division regions each provided with a heater therein. The substrate processing system also includes a control device that includes a measuring unit that measures a resistance value of the heater for each of the division regions, an estimating unit that estimates a temperature of each of the division regions based on the resistance value of the heater measured by the measuring unit, and a power controller that controls a power supplied to the heater for each of the division regions based on the temperature estimated by the estimating unit.

Substrate processing system and temperature control method

Temperature control method

Growing community of inventors

Miyagi, Japan

Kenichiro Nakamura