Fujitsu Semiconductor Limited

Fujitsu Corporation

Socionext Inc.

Fujitsu Microelectronics Limited

Chisso Corporation

Sumitomo Electric Device Innovations, Inc.

Tokyo Pet Kabushiki Kaisha

Ricoh Company, Ltd.

Fujutsu Semiconductor Limited

Kenichi Watanabe

Satoshi Otsuka

Michiari Kawano

Nobuhiro Misawa

Masanobu Ikeda

Toyoji Sawada

Kazuo Sukegawa

Takumi Hasegawa

Tomoji Nakamura

Yasunori Uchino

Hiroshi Namba

Kenya Ito

Mikio Yamahiro

Nobumasa Ootake

Takahiro Kimura

Kazuhiro Yoshida

Takashi Suzuki

Noriyoshi Shimizu

Hiroshi Kudo

Hisao Oikawa

Yoshiyuki Ohkura

Tetsuo Yoshimura

Daisuke Komada

Fumihiko Shimpuku

Masami Tanaka

Yoshinobu Tsujii

Takeshi Fukuda

Yoshitaka Morimoto

Yasuhiro Yamamoto

Yoshiki Takagi

Kohji Ohno

Keizou Iwatani

Hisaoi Oikawa

A semiconductor device is made by: forming an ohmic electrode including Al on a semiconductor substrate; forming a SiN film covering the ohmic electrode; forming a first photoresist on the SiN film, the first photoresist having an opening pattern overlapping the ohmic electrode; performing ultraviolet curing of the first photoresist; forming an opening in the SiN film exposed through the opening pattern and causing a surface of the ohmic electrode to be exposed inside the opening; forming a barrier metal layer on the first photoresist and on the ohmic electrode exposed through the opening; forming a second photoresist in the opening pattern; performing a heat treatment on the second photoresist and covering the barrier metal layer overlapping the opening with the second photoresist; and etching the barrier metal layer using the second photoresist.

Semiconductor device

A method for manufacturing a semiconductor device includes: forming an ohmic electrode including Al on a semiconductor substrate; forming a SiN film covering the ohmic electrode; forming a first photoresist on the SiN film, the first photoresist having an opening pattern overlapping the ohmic electrode; performing ultraviolet curing of the first photoresist; forming an opening in the SiN film exposed through the opening pattern and causing a surface of the ohmic electrode to be exposed inside the opening; forming a barrier metal layer on the first photoresist and on the ohmic electrode exposed through the opening; forming a second photoresist in the opening pattern; performing a heat treatment on the second photoresist and covering the barrier metal layer overlapping the opening with the second photoresist; and etching the barrier metal layer using the second photoresist.

Method for manufacturing semiconductor device

A multilayer wiring in a semiconductor device includes a first lower wiring formed in a first insulating layer, a via which is formed in a second insulating layer over the first insulating layer and which is connected to the first lower wiring, and an upper wiring connected to the via. The upper wiring has an outer edge at which a nick portion is formed beside a portion of the upper wiring to which the via is connected. The formation of the nick portion at the outer edge of the upper wiring prevents the via from enlarging.

Semiconductor device and semiconductor device fabrication method

The semiconductor device has insulating filmsformed over a substrate; an interconnectionburied in at least a surface side of the insulating films; insulating filmsformed on the insulating filmand including a hole-shaped via-holeand a groove-shaped via-holehaving a pattern bent at a right angle; and buried conductorsburied in the hole-shaped via-holeand the groove-shaped via-hole. A groove-shaped via-holeis formed to have a width which is smaller than a width of the hole-shaped via-hole. Defective filling of the buried conductor and the cracking of the inter-layer insulating film can be prevented. Steps on the conductor plug can be reduced. Accordingly, defective contact with the upper interconnection layer and the problems taking place in forming films can be prevented.

Semiconductor device having groove-shaped via-hole

Method of manufacturing a semiconductor device having groove-shaped via-hole

Growing community of inventors

Kawasaki, Japan

Kenichi Watanabe