Permelec Electrode Ltd.

Almex Inc.

Kenichi Ueno

Kazuhiro Hirao

Setsuro Ogata

Genzo Yamane

Hitoshi Usuda

Ryoei Yamakawa

A process for copper-plating a wafer which comprises electroplating a semiconductor wafer with an electrode comprising a corrosion-resistant metal substrate and a coat mainly composed of iridium oxide provided on the substrate as an anode and the wafer as a cathode in a solution containing copper ion. The anode is preferably an insoluble electrode comprising a corrosion-resistant metal substrate and a coat mainly composed of iridium oxide and further containing a metal or metal oxide selected from platinum, tantalum, titanium, niobium and oxides of these metals provided on the substrate. A neutral membrane or ion exchange membrane may be interposed between the anode and the cathode as a separating membrane.

Process for copper-plating a wafer using an anode having an iridium oxide coating

A method of copper-plating a material whereby electrolysis is performed using an electrolytic plating cell including a diaphragm which separates an anode chamber having therein an insoluble metal electrode as an anode from a cathode chamber having therein the material to be plated as a cathode, and further using an electrolyte solution containing copper ions and an additive, wherein the electrolyte is fed to the cathode chamber in a manner such that the copper ion concentration in the electrolyte within the cathode chamber is kept constant and electrolyte is further fed to the anode chamber at a rate of from about 0.2 to 11 ml/KAh.

Method of copper plating

According to the present invention, an upper electrode and a lower electrode are integrally assembled with insoluble electrodes and diaphragmn in diaphragm electrode structure. Small holes are furnished on the upper electrode, and the diaphragm of the upper electrode is installed obliquely with degassing means. By simply carrying the objects to be plated in horizontal direction, uniform and high quality electroplating can be continuously performed with extensive increase in productivity, while enjoying all of the benefits such as shorter interpolar distance between two electrodes, compact design of the apparatus, saving of expensive additives, etc. Further, the inspection of the diaphragm and the like can be rapidly and easily accomplished, and perfect protection of the diaphragm is assured, thus providing a horizontal carrying type electroplating apparatus suitable for practical use.

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Kanagawa, Japan

Kenichi Ueno