Kokusai Electric Corporation

Hitachi-kokusai Electric Inc.

Kenichi Fujimoto

Kazuhide Asai

Hiroyuki Iwakura

Kazuyoshi Yamamoto

Kayoko Yashiki

Masanori Okuno

Hidemoto Hayashihara

Takayuki Kawagishi

Ryuichi Kaji

Yukio Miyata

Masaaki Ueno

Masashi Sugishita

Yoshihiko Nakagawa

Tsukasa Iida

Susumu Nishiura

Hiroyuki Mitsui

Masao Aoyama

A substrate processing apparatus includes a device management controller including a parts management control part configured to monitor the state of parts constituting the apparatus, a device state monitoring control part configured to monitor integrity of device data obtained from an operation state of the parts constituting the apparatus, and a data matching control part configured to monitor facility data provided from a factory facility to the apparatus. The device management controller is configured to derive information evaluating the operation state of the apparatus based on a plurality of monitoring result data selected from a group consisting of maintenance timing monitoring result data acquired by the parts management control part, device state monitoring result data acquired by the device state monitoring control part, and utility monitoring result data acquired by the data matching control part.

Substrate processing apparatus, device management controller, and recording medium

Provided are a substrate processing apparatus, a semiconductor device manufacturing method, and a temperature controlling method, which are adapted to improve equipment operational rate. A calculation parameter computing unit computes a calculation parameter using at least a first calculation parameter correction value determined by a first calculation parameter setting unit based on an accumulated film thickness on a reaction vessel, a second calculation parameter correction value determined by a second calculation parameter setting unit based on an accumulated film thickness on a filler wafer, and a third calculation parameter correction value determined by a third calculation parameter setting unit based on the number of filler wafers. Product and filler wafers are accommodated and heat-treated in the reaction vessel while controlling a heating unit using calculation results obtained using at least the calculation parameter and deviation between a set temperature and a temperature detected in the heating unit by a temperature detector.

Substrate processing apparatus, semiconductor device manufacturing method and temperature controlling method

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Toyama, Japan

Kenichi Fujimoto