Taiwan Semiconductor Manufacturing Comp. Ltd.

Ken Wu

Luke Hsu

Hsin-Chang Lee

Chia-Jen Chen

Hung-Chang Hsieh

Chang-Cheng Hung

Ren-Guey Hsieh

Yao-Ching Ku

Hung-Ting Pan

A mask substrate, photomask and method for forming the same are provided. The photomask includes a substantially light transparent substrate and a circuitry pattern disposed over the light transparent substrate. The circuitry pattern includes a phase shifting layer disposed over the substantially light transparent substrate. A substantially light shielding layer is disposed over the phase shifting layer. At least one barrier layer is disposed over the substantially light shielding layer. An uppermost portion of the substantially light shielding layer does not comprise anti-reflective properties and the at least one barrier layer comprises an uppermost hardmask layer and an underlying anti-reflective layer.

Photomask and photomask substrate with reduced light scattering properties

A mask and method for forming the same including carrying out a photolithographic patterning process the method including providing a substantially light transparent portion; forming a substantially light shielding layer disposed over the substantially light transparent portion; forming at least one barrier layer disposed over the substantially light shielding layer; forming a resist layer disposed over the at least one barrier layer; patterning the resist layer for producing a circuitry pattern; and, carrying out an etching process according to the circuitry pattern to expose a portion of the substantially light transparent portion to form a mask.

Method for forming a robust mask with reduced light scattering

System and method for providing a passivation layer for a phase shift mask ('PSM') are described. In one embodiment, a PSM comprises a transparent substrate; a phase shift pattern disposed on the transparent substrate; and a passivation layer disposed to substantially cover exposed surfaces of at least a portion of the phase shift pattern.

System and method for providing phase shift mask passivation layer

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Jhubei, Taiwan

Ken Wu