Riken Corporation

Hitachi, Ltd.

Mitsubishi Chemical Corporation

Hitachi-High-Technologies Corporation

Japan Science and Technology Agency

University Public Corporation Osaka

Ken Harada

Tsuyoshi Matsuda

Tetsuya Akashi

Yoshihiko Togawa

Noboru Moriya

Hiroto Kasai

Keiko Shimada

Atsushi Ito

Toshiaki Tanigaki

Akira Sugawara

Yoshio Takahashi

Yoshifumi Taniguchi

Yasuhiro Kawase

Tomohiro Kusano

Teruo Kohashi

Toshiyuki Suzuki

Yutaro Takeshita

Kodai Niitsu

Toshiaki Shibata

Shinji Aizawa

Takeshi Sato

Toshie Yaguchi

Hirokazu Tamaki

Junji Endo

Keiji Tamura

Hiroaki Matsumoto

Nobuyuki Osakabe

Takafumi Yotsuji

Yoshichika Otani

Isao Matsui

Takashi Kimura

Shigeo Mori

Atsuhiro Kotani

Tomohiro Iwane

Kan Takeshita

Yoh Iwasaki

Minoru Sakamaki

The present invention relates to a cleaning liquid containing a component (A): a compound represented by the following formula (1), component (B): alkylamine, component (C): polycarboxylic acid, and component (D): ascorbic acid, in which a mass ratio of the component (A) to a total mass of the component (B) and the component (C) is 1 to 15, and in the formula (1), R, R, and Reach have a definition same as the definition described in the description, 

Cleaning liquid, cleaning method, and method for producing semiconductor wafer

An observation apparatus and method that avoids drawbacks of a Lorentz method and observes a weak scatterer or a phase object with in-focus, high resolution, and no azimuth dependency, by a Foucault method observation using a hollow-cone illumination that orbits and illuminates an incident electron beam having a predetermined inclination angle, an electron wave is converged at a position (height) of an aperture plate downstream of a sample, and a bright field condition in which a direct transmitted electron wave of the sample passes through the aperture plate, a dark field condition in which the transmitted electron wave is shielded, and a Schlieren condition in which approximately half of the transmitted wave is shielded as a boundary condition of both of the above conditions are controlled, and a spatial resolution of the observation image is controlled by selecting multiple diameters and shapes of the opening of the aperture plate.

Electron microscope and sample observation method using the same

A cleaning liquid containing at least one surfactant (A) selected from the group consisting of a polyoxyalkylene alkyl ether phosphoric acid, a polyoxyalkylene alkyl ether acetic acid and a polyoxyalkylene alkyl ether sulfonic acid and a chelating agent (C), which has a pH of 8 or more, and a cleaning liquid containing an oxidizing agent (B) and a chelating agent (C), which has a pH of 8 or more.

According to the present invention, there is provided a cleaning agent composition for a semiconductor device substrate including at least one of wiring and an electrode in which the wiring and the electrode contain cobalt or a cobalt alloy, the cleaning agent composition including a component (A): at least one compound selected from the group consisting of specific compounds; and a component (B): water.

Cleaning agent composition for semiconductor device substrate, method of cleaning semiconductor device substrate, method of manufacturing semiconductor device substrate, and semiconductor device substrate

A lensless Fourier transform holography high accuracy reconstruction method using a charged particle beam apparatus which holds a sample on a diffraction surface of a diffraction grating provided on the downstream side of a traveling direction of the charged particle beam and which is formed of a material having permeability. The charged particle beam passed through the diffraction surface is image-formed, and the formed image is detected. An opening region of the diffraction grating is smaller than an irradiation region of the charged particle beam on the diffraction grating. Image data is obtained in a state where the irradiation region of the charged particle beam diffracted with the diffraction grating is within the irradiation region of the charged particle beam transmitted through the diffraction grating. Plural holograms obtained based on the image data are Fourier transformed and an intensity distribution image is displayed and stored.

Holography reconstruction method and program

An interferometric electron microscope with increased irradiating electric current density which causes electron waves to interfere with each other and includes: an electron source; an irradiating lens system a focusing lens system an observational plane an artificial grating disposed between the electron source and the irradiating lens system and diffracting the electron beam emitted from the electron source to produce a first electron wave and a second electron wave; an electron beam biprism deflecting the first electron wave and the second electron wave to pass the first electron wave through the specimen for use as an object wave and to use the second electron wave as a reference wave; and an electron beam biprism in a focusing system deflecting the objective wave and the reference wave to superimpose the objective wave and the reference wave on the observational plane to produce an image.

Interferometric electron microscope

The density difference of particle beam irradiation with two optical statuses is produced utilizing a diffraction effect, within the same field of vision, such that a diffraction grating manufactured with a material which passes through a particle beam is provided on the upper side of a specimen and on the lower side of the irradiation optical system. Further, a region wider than the opening region of the diffraction grating is irradiated with the particle beam to produce the density difference of the particle beam emitted to the specimen, by superposing the particle beam, Bragg-diffracted with the opening region, and the particle beam, transmitted through the outer peripheral part of the opening region without being diffracted, with each other, and emitting the beam to the specimen.

Particle beam device, observation method, and diffraction grating

An interference optical system unit includes at least one electromagnetic lens that forms an image of a charged particle beam, at least one charged particle beam biprism, and a support member for the electromagnetic lens and the charged particle beam biprism. The electromagnetic lens, the charged particle beam biprism, the support member, and a space to an image plane of the electromagnetic lens are integrally configured as one unit. The interference optical system unit is disposed to have an optical axis coaxialized with an optical axis of an imaging optical system of an upstream stage that is disposed on an upstream side of the unit in a flow direction of the charged particle beam. A focal length of the electromagnetic lens and a deflection angle of the charged particle beam given by the charged particle beam biprism are controlled to generate an interference fringe of the charged particle beam on the image plane of the electromagnetic lens.

Interference optical system unit, charged particle beam interference apparatus, and method for observing charged particle beam interference image

An electron microscope for observation by illuminating an electron beam on a specimen, includes: an edge element disposed in a diffraction plane where a direct beam not diffracted by but transmitted through the specimen converges or a plane equivalent to the diffraction plane; and a control unit for controlling the electron beam or the edge element. The edge element includes a blocking portion for blocking the electron beam, and an aperture for allowing the passage of the electron beam. The aperture is defined by an edge of the blocking portion in a manner that the edge surrounds a convergence point of the direct beam in the diffraction plane. The control unit varies contrast of an observation image by shifting, relative to the edge, the convergence point of the direct beam along the edge while maintaining a predetermined distance between the convergence point of the direct beam and the edge.

Electron microscope and imaging method

The outer shape and size of a diffraction grating including an edge dislocation is made smaller than the irradiation areas of light waves and electromagnetic waves, by using an opener different from in the diffraction grating, the shape and size of the opening is superposed on the shape of a spiral wave that is generated by an edge dislocation diffraction grating, and the shape and size of the opening are reflected in the shape and size of the spiral wave on the diffractive surface. In addition, not only a diffraction grating system including a pair of a single opener and a single diffraction grating, but also a diffraction grating system in which plural openers and plural edge dislocation diffraction gratings are combined are used, and plural spiral waves can be generated on the diffractive surface with a higher degree of freedom.

Charged particle beam device, optical device, irradiation method, diffraction grating system, and diffraction grating

An object of the present invention is to provide a good cleaning liquid for semiconductor device which is used after a CMP step, and the present invention relates to a cleaning liquid for semiconductor device containing the following components (1) to (5) or (1)' to (4)&#x2032;:

Cleaning liquid for semiconductor device and method for cleaning substrate for semiconductor device

Although, conventionally, there were two methods, (1) a wave was transmitted through a spiral phase plate and (2) a diffraction grating containing an edge dislocation was used, they incurred complication of a configuration and securement of a larger amount of space and were not efficient because each of the spiral wave generation methods needed an incident wave to be a plane wave and at least one time of imaging is necessary at the time of wave irradiation on an observation object. In order to efficiently generate the spiral wave having a sufficient intensity, a structure of edge dislocation is taken in into a pattern of the zone plate and a spiral pattern containing a discontinuous zone is formed. Moreover, a thickness and a quality of material that change the phase of the wave by an odd multiple of &#x3c0; are selected for a material of the wave-blocking section in the pattern.

Zone plate having annular or spiral shape and Y-shaped branching edge dislocation

The present invention relates to a lens-less Foucault method wherein a transmission electron microscope objective lens () is turned off, an electron beam crossover () is matched with a selected area aperture (), and the focal distance of a first imaging lens () can be changed to enable switching between a sample image observation mode and a sample diffraction pattern observation mode, characterized in that a deflector () is disposed in a stage following the first imaging lens (), and conditions for an irradiating optical system () can be fixed after conditions for the imaging optical system have been determined. This allows a lens-less Foucault method to be implemented in a common general-use transmission electron microscope with no magnetic shielding lens equipped, without burdening the operator.

Electron microscope

The invention relates to a cleaning liquid for semiconductor device substrates comprising the following components (A) to (D) and a method of cleaning semiconductor device substrates:

Cleaning liquid for semiconductor device substrates and method of cleaning substrate for semiconductor devices

There is a limit in range and distance in which an electron beam can interfere and electron interference is implemented within a range of a coherence length. Therefore, interference images are consecutively recorded for each interference region width from an interference image of a reference wave and an observation region adjacent to the reference wave by considering that a phase distribution regenerated and observed by an interference microscopy is a differential between phase distributions of two waves used for interference and a differential image between phase distributions of a predetermined observation region and a predetermined reference wave is acquired by acquiring integrating phase distributions acquired by individually regenerating the interference images. This work enables a wide range of interference image which is more than a coherence length by arranging phase distribution images performed and acquired in the respective phase distributions in a predetermined order.

Growing community of inventors

Wako, Japan

Ken Harada