Hangzhou Garen Semiconductor Co., Ltd.

Keke Ma

Ning Xia

Hui Zhang

Deren Yang

Yingying Liu

The disclosure provides a method for growing a gallium oxide single crystal by casting and a semiconductor device containing the gallium oxide single crystal. The method includes: 1) heating a solid gallium oxide to complete melting, cooling to a melting point of the gallium oxide, and maintaining a melt state for at least 30 min; and 2) conducting gradient cooling on a gallium oxide melt obtained in step 1) until a solid gallium oxide single crystal is obtained. The gradient cooling is to cool the gallium oxide melt obtained in step 1) to a first temperature according to a first gradient, and then continue cooling to a room temperature according to a second gradient to obtain the gallium oxide single crystal. In step 1), since the solid gallium oxide is heated to the first temperature, oxygen with a volume fraction of at least 2% is present in a growth atmosphere.

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Hangzhou, China

Keke Ma