Applied Materials, Inc.

Keith Harvey

Li-Qun Xia

Tian-Hoe Lim

Karthik Janakiraman

Quoc Truong

Kirby Hane Floyd

Irwin Silvestre

A processing chamber may be effectively cleaned by a remote plasma flowed through the chamber in a direction opposite to the direction of gas flowed during wafer processing. Specifically, the remotely generated plasma may be introduced directly into the chamber through a processing gas exhaust or other port, and then be exhausted from the chamber by traveling through the gas distribution shower head to the foreline. In one embodiment of the present invention, this reverse flow of remote cleaning plasma is maintained for the duration of the chamber cleaning step. In an alternative embodiment, the direction of flow of the remote cleaning plasma through the chamber is alternated between this reverse flow and a conventional forward flow.

Backflush chamber clean

A UV radiation source is tunable to optimize the process of densifying a carbon-doped silicon oxide film. The composition and relative concentration of stimulated gases stimulated within an airtight bulb is controlled to produce radiation optimized for absorption by undesirable chemical bonds of the carbon-doped silicon oxide film, leading to disruption of these bonds and their replacement by more desirable stable chemical bonds. The energy of radiation emitted by the source is determined by the identity of excited chemical species, and the intensity of the radiation emitted by the source is determined by the concentration of the excited chemical species. By exciting a specific mixture of gases, radiation is emitted at a combination of energies and intensities calculated to disrupt populations of unstable bonds in the carbon-doped silicon oxide film while leaving desirable bonds in the film unaffected.

UV radiation source for densification of CVD carbon-doped silicon oxide films

Carbon-doped silicon oxide films (SiC O ) produced by CVD of an organosilane gas containing at least one silicon carbon bond, are rapidly densified by exposure to ultraviolet radiation. UV radiation exposure disrupts undesirable chemical bonds (such as Si&mdash;OH) present in the carbon-doped silicon oxide following deposition, replacing these bonds with more desirable chemical bonds characteristic of an ordered silicon oxide lattice. As a result of radiation exposure and the chemical bond replacement, gases such as water vapor are evolved and removed, producing a densified and stable carbon-doped silicon oxide film. Densification utilizing ultraviolet radiation is particularly useful because softness and fragility of freshly-deposited (SiC O ) films may preclude insertion and removal of coated substrates from conventional batch loaded thermal annealing chambers.

Method for densification of CVD carbon-doped silicon oxide films through UV irradiation

A system for controlling pressure flow and concentration Of O.sub.3 /O.sub.2 positions a thermal MFC upstream from an ozone generator to avoid the adverse effects of ozone on the thermal MFC. A flow restrictor diverts a precise amount of flow to an ozone monitor so that the flow to a CVD chamber is precisely controlled. In other embodiments a full-flow ozone monitor and non-thermal MFC are utilized.

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Los Gatos, CA, United States of America

Keith Harvey