Applied Materials, Inc.

Keith A Miller

Martin Lee Riker

Ilya Lavitsky

Muhammad M Rasheed

Xianmin Tang

Tza-Jing Gung

John C Forster

Anantha K Subramani

Rongjun Wang

Alan A Ritchie

Goichi Yoshidome

Kirankumar Neelasandra Savandaiah

Fuhong Zhang

Adolph Miller Allen

Joung Joo Lee

Jianxin Lei

William R Johanson

Jothilingam Ramalingam

Donny Young

William Fruchterman

Shouyin Zhang

Tiefeng Shi

Gang Fu

Vijay D Parkhe

Peijun Ding

Prashanth Kothnur

Vincent E Burkhart

Hong Sheng Yang

Thanh X Nguyen

Xiaodong Wang

Daniel Clarence Lubben

Ryan Hanson

Maurice E Ewert

Uday Pai

Randy D Schmieding

Wei W Wang

Yong Cao

Xing Chen

Hari K Ponnekanti

Xiangjin Xie

John Joseph Mazzocco

Yu Liu

Marc O Schweitzer

Shane Lavan

David Gunther

Alexander Jansen

Kishor Kumar Kalathiparambil

Luke Vianney Varkey

Michael Allen Flanigan

Chao Du

Brij Datta

Emily Schooley

Isaac Porras

Srinivas Gandikota

Daniel John Hoffman

Praburam Gopalraja

Michael Santiago Cox

Karl M Brown

Vineet Haresh Mehta

Renu Whig

Steven C Shannon

Steven Victor Sansoni

Bencherki Mebarki

Hamid Tavassoli

John Pipitone

Shambhu Nath Roy

Lei Zhou

Manjunatha P Koppa

Kenny King-Tai Ngan

Srinivasa Rao Yedla

Rong Tao

Cheng-Hsiung Matthew Tsai

James S Van Gogh

Hien-Minh Huu Le

Hoa Thi Kieu

Shreekant Gayaka

Christopher L Boitnott

Steve Sansoni

Anthony Vesci

Irena H Wysok

Mukund Sundararajan

Halbert Chong

Winsor Lam

Sundarapandian Ramalinga Vijayalakshmi Reddy

Zhiyong Wang

Andrew S Gillard

Mengqi Ye

Paul Kiely

Carl R Johnson

Sree Rangasai Kesapragada

Sunil Kumar Garg

Jennifer Watia Tiller

Shengde Zhong

Sally Lou

Andrew Tomko

Alexander Erenstein

Genhua Xu

Mahendra Bhagwat Lokhande

Chandrashekar Kenchappa

Sudarsan Srinivasan

Embodiments provided herein generally include apparatus, plasma processing systems and methods for dynamic impedance matching across multiple frequency bands of a power source. An example method includes amplifying a broadband signal, splitting the amplified broadband signal across a plurality of channel paths coupled to an impedance matching network, and adjusting at least one first impedance associated with the impedance matching network to achieve a second impedance within a threshold value based at least in part on feedback associated with the broadband signal. The impedance matching network includes a plurality of impedance matching circuits coupled to plasma excitation circuitry, and each of the impedance matching circuits is coupled to a different path of the plurality of channel paths and an output node.

Broadband supply circuitry for a plasma processing system

Apparatus and methods for controlling plasma profiles during PVD deposition processes are disclosed. Some embodiments utilize EM coils placed above the target to control the plasma profile during deposition.

EM source for enhanced plasma control

Methods, apparatuses and systems for detecting and managing arc events during a plasma chamber process include receiving impedance data measured during a plasma chamber process, analyzing the impedance data to determine if an arc event is occurring during the plasma chamber process, and if it is determined that an arc event is occurring, an action is taken to suppress an arc of the arc event. In some instances, a machine learning model that has been trained to recognize when an arc event is occurring from received measurement data is used to determine if an arc event is occurring.

Arc management algorithm of RF generator and match box for CCP plasma chambers

Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.

Methods and apparatus for controlling ion fraction in physical vapor deposition processes

Self-retained low friction pad

A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.

Cleaning of SIN with CCP plasma or RPS clean

Power supplies, waveform function generators and methods for controlling a plasma process are described. The power supplies or waveform function generators include a component for executing the method in which a waveform shape change index is determined during a plasma process and evaluated for compliance with a predetermined tolerance.

Waveform shape factor for pulsed PVD power

Embodiments of substrate supports for use in substrate processing chambers are provided herein. In some embodiments, a substrate support includes: an upper assembly having a base plate assembly coupled to a lower surface of a cooling plate, wherein the base plate assembly includes a plurality of electrical feedthroughs, and wherein the cooling plate includes a plurality of openings aligned with the plurality of electrical feedthroughs; an electrostatic chuck disposed on the upper assembly and removably coupled to the cooling plate, wherein the electrostatic chuck has a chucking electrode disposed therein that is electrically coupled to a first pair of electrical feedthroughs of the plurality of electrical feedthroughs; and an inner tube coupled to the cooling plate and configured to provide an RF delivery path to the electrostatic chuck.

High temperature detachable very high frequency (VHF) electrostatic chuck (ESC) for PVD chamber

Collimator for a physical vapor deposition (PVD) chamber

Cleaning of sin with CCP plasma or RPS clean

Methods and apparatus for processing a substrate are provided herein. For example, a processing chamber for processing a substrate comprises a sputtering target, a chamber wall at least partially defining an inner volume within the processing chamber and connected to ground, a power source comprising an RF power source, a process kit surrounding the sputtering target and a substrate support, an auto capacitor tuner (ACT) connected to ground and the sputtering target, and a controller configured to energize the cleaning gas disposed in the inner volume of the processing chamber to create the plasma and tune the sputtering target using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit during the etch process to remove sputtering material from the process kit, wherein the predetermined potential difference is based on a resonant point of the ACT.

Methods and apparatus for processing a substrate

A system may be configured to monitor an amount of a gas species in a processing chamber using Optical Emission Spectrometry. The gas measurement may be provided as feedback to a control process that generates a target setpoint for a gas flow controller into the process chamber. This real-time process may increase/decrease the flow rate of the gas in order to maintain a process deposition mode within a transition region between primarily metallic deposition and primarily compound deposition.

Optical emission spectroscopy control of gas flow in processing chambers

Collimator for a physical vapor deposition chamber

Growing community of inventors

Mountain View, CA, United States of America

Keith A Miller