Toa Nenryo Kogyo Kabushiki Kaisha

Tonen Corporation

Toa Nenryo Kogyo, K. K.

Keitaro Fukui

Osamu Nakamura

Mitsuo Matsumura

Hideo Yamamoto

Toshihiro Yoshida

Tatsuro Nagahara

Yoshinobu Okayasu

Yasushi Okayama

Hisashi Kakinoki

Atsushi Tsunoda

Kunio Asai

According to the present invention, a polycrystalline silicon thin film with a large crystal grain size is formed on a substrate, other than single crystalline silicon, e.g. on a glass substrate with a low strain point, by plasma CVD or photo CVD, and the polycrystalline silicon thin film thus obtained has a high (100) orientation percentage and a low (220) orientation percentage, a low hydrogen content, a low fluorine content in the film, and a large crystal grain size. It has excellent flatness and is suitable for microstructure fabrication and for the manufacture of a thin film transistor. Because a thin film transistor with a large area can be produced, it is also usable for many applications such as liquid crystal display. By introducing a high concentration of dopant into the interface region between the polycrystalline silicon film and the substrate, the growth of the polycrystalline grain is enhanced because the high concentration of dopant becomes the nucleus for crystal growth.

Polycrystalline silicon thin film and transistor using the same

A thin film of a superconductor comprising composite metal oxides is formed by atomizing and spraying a homogeneous solution or solutions containing as solutes one or more of metal compounds capable of forming the superconductor, with an ultrasonic wave sprayer, onto a hot substrate to form the thin film, and the ultrasonic wave sprayer for forming the thin film of the superconductor comprises an ultrasonic wave-generating vibrator, feedstock supplier, atomized solution-escaping inhibitor, substrate supporter and heater, the ultrasonic wave-generating vibrator being connected through an axis to a solution-atomizing nozzle.

Method for forming oxide superconducting films with an ultrasonic wave

This invention discloses a new semiconductor device having no step type p-i-n juctions but rather has a graded p-i-n juction. The semiconductor device shows a high photoelectric conversion efficiency, and since said device can be produced easily with good reproducibility by a plasma discharge method, it is especially suited for use as a solar battery. An apparatus for the production of said semiconductor device is also disclosed.

Method of making graded junction containing amorphous semiconductor

Growing community of inventors

Ohi, Japan

Keitaro Fukui