Mitsubishi Materials Corporation

Solar Frontier K.k.

Keita Umemoto

Shoubin Zhang

Masahiro Shoji

Yuya Mutsuda

The present invention provides a sputtering target having a composition containing 45 at % to 90 at % of In, and the remainder including Cu and inevitable impurities. An In single phase and a CuIncompound phase exist, and an XRD peak ratio I(In)/I(CuIn) between the In single phase and the CuIncompound phase is in a range of 0.01 to 3. The average grain size of the CuIncompound phase is 150 &#x3bc;m or less, the amount of oxygen is 500 mass ppm or less, and the theoretical density ratio is 85% or more.

Sputtering target and method for producing sputtering target

A Cu&#x2014;Ga binary alloy sputtering target having excellent mechanical workability, high density, and high bending strength, and a method of producing the sputtering target are provided. The sputtering target has a composition including 28 to 35 atomic % of Ga and the balance made of Cu and inevitable impurities. In addition, the sputtering target has a coexistence microstructure in which a low-Ga-containing Cu&#x2014;Ga binary alloy phase is surrounded by a high-Ga-containing Cu&#x2014;Ga binary alloy phase. The low-Ga-containing Cu&#x2014;Ga binary alloy phase includes 26 atomic % or less of Ga and a balance made of Cu. The high-Ga-containing Cu&#x2014;Ga binary alloy phase includes 28 atomic % or more of Ga.

Cu&#x2014;Ga binary alloy sputtering target and method of producing the same

Provided are a sputtering target which has excellent machinability and is capable of forming a compound film that mainly contains Cu and Ga and a method for producing the sputtering target. The sputtering target of the present invention has a component composition that contains 15 to 40 at % of Ga, 0.1 to 5 at % of Bi, and the balance composed of Cu and unavoidable impurities with respect to all metal elements in the sputtering target. The method for producing the sputtering target includes a step of melting at least Cu, Ga and Bi as simple substances or an alloy that contains two or more of these elements at 1,050&#xb0; C. or higher to produce an ingot.

Sputtering target and method for producing same

A sputtering target consists of a sintered body having a component composition consisting of: Ga of 10 to 40 at. % and Na of 0.1 to 15 at. % as metal elements; and the balance being Cu and inevitable impurities. The sintered body contains the Na in a form of Na compounds consisting of at least one compound selected from the group consisting of sodium sulfate, sodium sulfite, sodium selenate, and sodium selenite, the sintered body has a composition in which a Na compound phase is dispersed, and an average grain size of the Na compound phase is 10 &#x3bc;m or less.

Sputtering target and production method of the same

Provided is a sputtering target which contains Na in high concentration and, despite this, is inhibited from discoloration, generating spots, and causing abnormal electrical discharge and which has high strength and rarely breaks. Also provided is a method for producing the sputtering target. The sputtering target has a component composition that contains 10 to 40 at % of Ga and 1.0 to 15 at % of Na as metal element components other than F, S, and Se, with the remainder composed of Cu and unavoidable impurities, wherein the Na is contained in the form of at least one Na compound selected from sodium fluoride, sodium sulfide, and sodium selenide. The sputtering target has a theoretical density ratio of 90% or higher, a flexural strength of 100 N/mmor higher, and a bulk resistivity of 1 m&#x3a9;&#xb7;cm or less. The number of 0.05 mmor larger aggregates of the at least one of sodium fluoride, sodium sulfide, and sodium selenide present per cmarea of the target surface is 1 or less on average.

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Sanda, Japan

Keita Umemoto