Adeka Corporation

Keisuke Takeda

Atsushi Yamashita

Tomoharu Yoshino

Masako Hatase

Masaki Enzu

Ryota Fukushima

Atsushi Sakurai

Yoshiki Ooe

Chiaki Mitsui

Provided is a cobalt compound represented by the following general formula (1): where Rto Reach independently represent a hydrogen atom, a halogen atom, an alkyl group having 1 to 5 carbon atoms, a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, a group represented by the following general formula (L-1), or a group represented by the following general formula (L-2); where Rto Reach independently represent an alkyl group having 1 to 5 carbon atoms, Aand Aeach independently represent an alkanediyl group having 1 to 5 carbon atoms, and * represents a bonding site.

Cobalt compound, thin-film forming raw material, thin-film, and method of producing thin-film

The present invention provides an amidinate compound represented by the following general formula (1) or a dimer compound thereof, and a method of producing a thin-film including using the compound as a raw material: where Rand Reach independently represent an alkyl group having 1 to 5 carbon atoms, Rrepresents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, M represents a metal atom or a silicon atom, and 'n' represents the valence of the atom represented by M, provided that at least one hydrogen atom of Rto Ris substituted with a fluorine atom.

Amidinate compound, dimer compound thereof, thin-film forming raw material, and method of producing thin film

The present invention provides a ruthenium compound represented by the following general formula (1) or (2), a thin-film forming raw material containing the ruthenium compound, and a method of producing a thin-film including using the thin-film forming raw material: where Rto Reach independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a fluorine atom-containing group, and 'n' represents an integer from 0 to 2, provided that at least one of Rto Rrepresents the fluorine atom-containing group; where Rto Reach independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and a total number of the carbon atoms of Rto Ris 3 or more.

Ruthenium compound, thin-film forming raw material, and method of producing thin film

Provided is a thin-film forming raw material containing a compound represented by the following formula (1): in the formula (1), Rto Reach independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a group containing a fluorine atom, M represents a metal atom, and 'n' represents a valence of the metal atom represented by M, provided that at least one of R, R, and Rrepresents the group containing a fluorine atom.

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Tokyo, Japan

Keisuke Takeda