Jsr Corporation

Tokyo Institute of Technology

Keisuke Kuriyama

Kenzou Ookita

Hitoshi Hamaguchi

Kenrou Tanaka

Shoei Tsuji

Yasuhiro Nakamura

Atsushi Kobayashi

Takahiro Okamoto

Mitsuru Ueda

Shinji Ando

Hideaki Takase

Hideki Nishimura

Yuichi Eriyama

Kazuto Watanabe

Rikimaru Kuwabara

Taichi Matsumoto

Takafumi Shimizu

Sugirou Shimoda

Shuichi Sugawara

Jin-gang Liu

Yuzi Shibasaki

Isao Aritome

Miwa Ariyuki

The present invention relates to: a method of producing a structure having a recessed pattern; a resin composition; a method of forming an electroconductive film; an electronic circuit; and an electronic device. The method of producing a structure having a recessed pattern includes the following steps (i) and (ii), and the recessed pattern has a film thickness that is thinner by 5% to less than 90% with respect to that of a coating film obtained in the step (i):

Method for manufacturing structure having recessed pattern, resin composition, method for forming electroconductive film, electronic circuit, and electronic device

The thin film transistor includes a first insulating layer provided on a substrate; a source electrode and a drain electrode that are provided on the first insulating layer; a semiconductor layer provided so as to cover the first insulating layer, the source electrode, and the drain electrode; a second insulating layer provided on the semiconductor layer; and a gate electrode provided on the second insulating layer, in which the first insulating layer is formed of a hydrophilic/hydrophobic material and has a recess portion, and the source electrode and the drain electrode are provided so as to fill the recess portion of the first insulating layer.

Thin film transistor and MOS field effect transistor that include hydrophilic/hydrophobic material, and methods for manufacturing the same

A process for producing a substrate having wiring includes steps (i) to (v) described as follows: (i) applying a radiation-sensitive composition on a substrate to form a coating film; (ii) irradiating a prescribed part of the coating film with radiation to allow the coating film to have a radiation-irradiated region and a radiation-unirradiated region; (iii) allowing the coating film obtained in the step (ii) to have a concave region and a convex region; (iv) forming wiring on the concave region; and (v) removing the convex region by an application of radiation or by heating.

Process for producing substrate having wiring, radiation-sensitive composition, electronic circuit and electronic device

Provided is a method for manufacturing a substrate having a concave pattern to be used for forming a high-definition pattern while suppressing wet-spreading and bleeding of a film-forming ink, provided is a composition to be used for manufacturing the substrate, and provided are a method for forming a conductive film, an electronic circuit, and an electronic device. The method for manufacturing a substrate having a concave pattern includes: (i) a step of applying, on a substrate, a composition containing a polymer having an acid-dissociable group and an acid generator to form a coating filmand (ii) a step of irradiating a predetermined portion of the coating filmwith radiation. The method for forming a conductive film includes applying a conductive film-forming ink on the concave pattern formed in the exposed portion of the coating filmand heating the ink to form a pattern. The electronic circuit and the electronic device are provided by using the method for forming a conductive film.

Method for manufacturing substrate having concave pattern, composition, method for forming conductive film, electronic circuit and electronic device

In a method for forming a three-dimensional interconnection, a contact plug is formed within a through hole provided in a substrate and an upper wire formed on an upper side of the substrate and a lower wire formed on a lower side are electrically connected to one another by the contact plug. A coating film is formed on an upper surface of the substrate and inner surface of the through hole by applying a metal film-forming composition containing at least one salt of and a particle of a metal to the substrate provided with the through hole. A metal film is formed by heating the coating film, and plated by filling up the through hole by depositing a conductor on the metal film by a plating process using the metal film as a seed layer. An excess conductor deposited in the plating is removed by a chemical mechanical polishing process.

Method for forming three-dimensional interconnection, circuit arrangement comprising three-dimensional interconnection, and metal film-forming composition for three-dimensional interconnection

The present invention relates to polishing pads, including at least 60 to 99 parts by weight of a polymer matrix (A) having 1,2-polybutadiene; and 1 to 40 parts by weight of component (B) having a copolymer having a polyether block, where the total amount of the polishing pad is 100 parts by mass, polymer matrix (A) includes 1,2-polybutadiene in an amount of at least 60 parts by weight, relative to 100 parts by mass of the polishing pad, component (B) includes the copolymer having a polyether block in an amount of at most 40 parts by weight relative to 100 parts by mass of the polishing pad, and the polishing pads have a surface resistivity of 2.6&#xd7;10to 9.9&#xd7;10&#x3a9;.

Chemical mechanical polishing pad

It is provided for a resin composition including (A) at least one polyamic acid having the structure represented by the following formula (1): wherein Ris independently an alkyl group having 1 to 3 carbon atoms or a cyano group; a is independently an integer of 0 to 4; R is a tetravalent organic group; n is an integer of 1 to 4; and m is an integer of 1 to 100,000, and (E) an organic solvent.

Resin composition, cured product and optical parts

A chemical mechanical polishing pad of the present invention has the following two groups of grooves on the polishing surface: (i) a group of first grooves intersect a single virtual straight line extending from the center toward the periphery of the polishing surface and have a land ratio represented by the following equation of 6 to 30: Land ratio=(P&#x2212;W)&#xf7;W (where P is the distance between adjacent intersections between the virtual straight line and the first grooves, and W is the width of the first grooves); and (ii) a group of second grooves extend from the center portion toward the peripheral portion of the polishing surface and consist of second grooves which are in contact with one another in the area of the center portion and second grooves which are not in contact with any other second grooves in the areas of the center portion. The chemical mechanical polishing pad of the present invention has a high polishing rate and excellent in-plane uniformity in the amount of polishing of the surface to be polished even when the amount of an aqueous dispersion for chemical mechanical polishing is made small.

Chemical mechanical polishing pad and chemical mechanical polishing method

Growing community of inventors

Tokyo, Japan

Keisuke Kuriyama