Mitsubishi Heavy Industries Limited

Other

Keisuke Kawamura

Hiroshi Mashima

Yoshiaki Takeuchi

Tetsuro Shigemizu

Akemi Takano

Masayoshi Murata

Hirohisa Yoshida

Akira Yamada

Yasuki Tamura

Kazuo Koga

Kojiro Okada

Osamu Nakayama

Kiyoshi Kawamura

Eishiro Sasakawa

Tatsufumi Aoi

Kenji Tagashira

Yasuhiro Yamauti

Norihiro Hukuda

Masahiro Sakaki

Shigekazu Ueno

Hiromu Takatuka

A vacuum processing apparatus is provided, in which a deposition characteristic is easily adjusted, and occurrence of difference in deposition characteristic between deposition chambers can be suppressed, and reduction in equipment cost can be achieved, and a deposition method using the vacuum processing apparatus is provided. The vacuum processing apparatus is characterized by having a plurality of discharge electrodes (to) that are supplied with high-frequency power from a power supply unit () through both ends () thereof, and form plasma with respect to a substrate () respectively, and a plurality of matching boxes (to) which tune phases and amplitudes of the high-frequency power supplied to the plurality of discharge electrodes (to) at the ends () respectively; wherein impedance of the plurality of matching boxes (to) are set to approximately the same value, and the impedance value is a value at which reflected power is approximately minimized, the reflected power being returned to the power supply unit () from one discharge electrode among the plurality of discharge electrodes (to).

Vacuum processing apparatus

An operation method for cleaning a vacuum processing apparatus includes feeding a cleaning gas into a film deposition chamber of the vacuum processing apparatus when a predetermined number of batches of film deposition process is finished. The predetermined number of batch of film deposition processes is calculated based on a film deposition-related operating time (a film deposition time and a film deposition preparation time) and a cleaning-related operating time (a cleaning procedure time, a cleaning procedure preparation time, and a pre-deposition film deposition time).

Vacuum processing apparatus and operating method for vacuum processing apparatus

A method for making the characteristics of the distribution of film thickness uniform is provided, avoiding generation of phase differences among streams of high-frequency electric power by manipulating the electrical characteristics of cables through which the high-frequency electric power is transmitted. Coaxial cables (toandto) having a standard length and vacuum cables (toandto) are installed, then a film is formed on a substrate by actually supplying high-frequency electric power, and thereafter the condition of vapor deposition such as the thickness of the film is observed. Based on the observations, the full lengths of the coaxial cables which communicate with the feeding points and the electrodes which correspond with positions over the substrate which need to be adjusted are changed. The coaxial cables are installed again, and high-frequency electric power equivalent to that used in the previous operation is supplied to form a film. The distribution of the film formed on the substrate is made uniform by repeating the above operations.

Method for plasma-enhanced chemical vapor deposition and apparatus for plasma-enhanced chemical vapor deposition

A radio frequency power supply structure and a plasma CVD device comprising the same are provided in which reflection of radio frequency power at a connecting portion where an RF cable connects to an electrode is reduced so that incidence of the radio frequency power into the electrode increases. In the radio frequency power supply structure for use in a device generating plasma by charging a plate-like electrode with a radio frequency power, the radio frequency power supply structure supplying the electrode with the radio frequency power from an RF cable, the RF cable is positioned on an extended plane of a plane formed by the electrode to connect to the electrode at a connecting portion provided on an end peripheral portion of the electrode. The RF cable connects to the electrode substantially in the same plane as the plane formed by the electrode. Voltage acting after the connecting portion becomes symmetric relative to the plane formed by the electrode and the electric line of force also becomes symmetric. Thereby, change of impedance at the connecting portion is reduced, reflection of the radio frequency power at the connecting portion is reduced, incidence of the radio frequency power into the electrode increases and the efficiency of film forming and surface treatment is enhanced.

High-frequency power supply structure and plasma CVD device using the same

A plasma generation device for generating plasma uniformly over a large surface area by very high frequency (VHF), which is installed in a plasma chemical vapor deposition apparatus. A first and a second power supply section are installed on both ends of the discharge electrode installed in a plasma chemical vapor deposition apparatus, and are supplied with alternate cycles: the first cycle wherein the first and second power supply sections receive high frequency waves at the same frequency, and a second cycle wherein different high frequency waves are received. In this manner, the state of plasma generation may be varied in each cycle, and when averaged over time, it makes possible uniform plasma generation over a large surface area.

Method and device for generating uniform high-frequency plasma over large surface area used for plasma chemical vapor deposition apparatus

An object is to provide a high-frequency plasma generating apparatus and process which can further advance uniformity of the thickness of a film on a substrate with a large area in comparison with conventional apparatuses. In a reaction chamber (), a ground electrode () is disposed, and a discharge electrode () is disposed opposite to the ground electrode (). A substrate () as a processing object is placed in close contact with the ground electrode (). A high-frequency voltage is applied to the discharge electrode () so as to generate plasma between the ground electrode and the discharge electrode. An RF electric power supply () generates a first high-frequency voltage, and outputs the generated voltage on feeding points () disposed on a lateral portion of the discharge electrode (). An RF electric power supply () generates a second high-frequency voltage, and outputs the generated voltage on feeding points () disposed on another lateral portion of the discharge electrode (). Here, the second high-frequency voltage has the same frequency as that of the first high-frequency voltage and has a phase which varies with a low-frequency signal, which is modulated by a predetermined modulation signal.

High frequency plasma generator and high frequency plasma generating method

An exhaust emission purifier includes a catalyst unit disposed in an exhaust pipe of an engine. Electrodes (reaction adjustment unit) are provided on a honeycomb carrier of the catalyst unit in a layered form in order to apply an electric field to the vicinity of the catalyst surface to thereby adjust the catalytic reaction. An ECU serves as a status detection unit to detect factors which affect the exhaust gas purifying performance of the catalyst unit (i.e., operating conditions), and serves as a control unit which controls the electric field applied by the electrodes, on the basis of the detected operating conditions.

Exhaust emission purifier

The present plasma type exhaust gas cleaning apparatus comprises a dielectric ( ) arranged between a discharge electrode ( ) and a ground electrode ( ). The dielectric has a plurality of independent cavities ( ) formed therein. The exhaust gas from combustion equipment ( ) flows through the interiors of the plurality of independent cavities ( ). Thus, in the plasma type exhaust gas cleaning apparatus, the discharge electrode ( ) and the ground electrode ( ) are securely partitioned by the cavities ( ). When a voltage from a high voltage generator ( ) is applied to between the discharge electrode ( ) and the ground electrode ( ), plasma resulting from corona discharges occurs in each individual cavity ( ) without arising directly across the discharge electrode ( ) and the ground electrode ( ). The exhaust gas is thereby cleaned up.

Plasma type exhaust gas cleaning apparatus

An apparatus and method for treating exhaust gases. In this apparatus, a plurality of stages of reactor chambers (R , R , . . . R ) are connected in series in the direction of an exhaust gas flow. Further, high-voltage power supplies (V , V , . . . and V ) are connected to the reactor chambers (R , R , . . . and R ), respectively. Moreover, in each of these reactor chambers, a streamer discharger plasma is generated. Furthermore, the more downstream a reactor chamber of a stage is placed, the lower energy to be cast into the reactor chamber becomes. The density of electrons generated in a gas decomposition unit is high in a portion thereof on the upstream side of the exhaust gas flow and the electron density is low in a portion thereof on the downstream side. Additionally, the present invention further provides a pulse generator in which a high voltage, which is an output voltage of a D.C. charger (V ), is simultaneously applied to a plurality of distributed constant lines (or transmission lines) (1 , 1 , 2 , 2 , . . . , N and N ), which are connected in parallel with one another, by means of a signal shortcircuit switch (S ).

Pulse generator for treating exhaust gas

An apparatus and method for treating exhaust gases. A plurality of stages of reactor chambers are connected in series in the direction of an exhaust gas flow. High-voltage power supplies are connected to the reactor chambers In each of these reactor chambers, a streamer discharger plasma is generated. The more downstream a reactor chamber of a stage is placed, the lower energy to be cast into the reactor chamber becomes. The density of electrons generated in a gas decomposition unit is higher on the upstream side of the exhaust gas flow and the electron density is lower on the downstream side. A pulse generator is provided in which a high voltage, which is an output voltage of a D.C. charger (V,), is simultaneously applied to a plurality of distributed constant lines, which are connected in parallel with one another, by a signal shortcircuit switch (S,).

Apparatus and method for treating exhaust gas and pulse generator used therefor

An apparatus and method for treating exhaust gases. In this apparatus, a plurality of stages of reactor chambers (R.sub.1, R.sub.2, . . . . and R.sub.n) are connected in series in the direction of an exhaust gas flow. Further, high-voltage power supplies (V.sub.1, V.sub.21 . . . and V.sub.n) are connected to the reactor chambers (R.sub.1, R.sub.2, . . . . and R.sub.n), respectively. Moreover, in each of these reactor chambers, a streamer discharger plasma is generated. Furthermore, the more downstream a reactor chamber of a stage is placed, the lower energy to be cast into the reactor chamber becomes. The density of electrons generated in a gas decomposition unit is high in a portion thereof on the upstream side of the exhaust gas flow and the electron density is low in a portion thereof on the downstream side. Additionally, the present invention further provides a pulse generator in which a high voltage, which is an output voltage of a D.C. charger (V.sub.0), is simultaneously applied to a plurality of distributed constant lines (or transmission lines) (1.sub.-1, 1.sub.-2, 2.sub.-1, 2.sub.-2, . . . , N.sub.-1 and N.sub.-2), which are connected in parallel with one another, by means of a signal shortcircuit switch (S.sub.1).

Growing community of inventors

Nagasaki, Japan

Keisuke Kawamura