Hitachi High-tech Corporation

Keisuke Akinaga

Masaki Yamada

Takashi Hattori

Yutaka Kouzuma

Yasushi Sonoda

Kazuyuki Hirozane

Yoshifumi Ogawa

A method for etching a silicon oxide film at a high selection ratio with respect to a silicon nitride film while a high etching rate of the silicon oxide film is balanced with a low etching rate of the silicon nitride film. The etching processing method is a dry etching processing method for etching a film without using plasma by supplying gas into a process chamber, the film having a side wall of a groove or a hole constituted by respective end parts of laminated film layers formed on a wafer, the laminated film layers including silicon oxide films each sandwiched between silicon nitride films, and in which the silicon oxide films are etched laterally from the end parts with the wafer being set to a low temperature equal to or less than (0.040x−42.0° C.) when a partial pressure of hydrogen fluoride gas is taken as x (Pa).

Etching processing method

There is provided a gas supply apparatus that can effectively suppress a trouble caused by backflow of a process gas to the upstream side when processing is performed by using the process gas inside a chamber. The gas supply apparatus supplies gas to a processing chamber in which a sample is processed. The gas supply apparatus includes: ports respectively connected to gas sources of a plurality of types of gases containing a purging gas and a processing gas; and a collective pipe in which the plurality of types of gases supplied from the ports are joined and flowed. A gas flow path through which gas supplied from the port connected to the gas source for the purging gas flows is formed on an uppermost stream side of the collective pipe.

Gas supply apparatus, vacuum processing apparatus, and gas supply method

To provide a plasma processing apparatus or an operating method of a plasma processing apparatus with improved yield. The plasma processing apparatus includes: a sample stage disposed in the processing chamber in a vacuum container; a plasma forming space in which plasma for processing a wafer is formed above the sample stage and a lower space communicated with the plasma forming space below; an exhaust port disposed at a bottom portion of the lower space; a heater for heating a lower portion of the vacuum container surrounding the lower space; a first vacuum gauge that detects a pressure in the processing chamber during the processing of the wafer; a second vacuum gauge for calibration communicated with an opening disposed in an inner wall of the processing chamber surrounding an outer periphery of the lower space below the first vacuum gauge; and a correction unit that is configured to correct an output of the first vacuum gauge by using outputs of the first and second vacuum gauges when a pressure in the processing chamber is at a pressure value regarded as 0 and at a plurality of pressure values higher than the pressure value.

Growing community of inventors

Tokyo, Japan

Keisuke Akinaga