Agc Inc.

Keishi Tsukiyama

Toshiyuki Uno

Daijiro Akagi

Hirotomo Kawahara

Michinori Suehara

Hiroaki Iwaoka

Hiroshi Hanekawa

Takuma Kato

Sadatatsu Ikeda

Ryusuke Oishi

Chikako Hanzawa

Yukihiro Iwata

The present invention relates to a reflective mask blank for EUV lithography, including: a substrate, a multilayer reflective film reflecting EUV light, and a phase shift film shifting a phase of the EUV light, in which the substrate, the multilayer reflective film, and the phase shift film are formed in this order, the phase shift film includes a layerincluding ruthenium (Ru) and nitrogen (N), and the layerhas an absolute value of a film stress of 1,000 MPa or less.

Reflective mask blank for EUV lithography, reflective mask for EUV lithography, and method for manufacturing same

A reflective mask blank includes a substrate, a multilayered reflection film configured to reflect EUV rays, a protection film configured to protect the multilayered reflection film, and an absorption film configured to absorb the EUV rays in this order. The protection film contains Rh as a main component. The multilayered reflection film includes an uppermost layer that is closest to the protection film in the multilayered reflection film and contains Si and N. In the uppermost layer, an element ratio (N/Si) of N to Si is greater than 0.00 and less than 1.50, and an element ratio (O/Si) of O to Si is 0.00 or greater and less than 0.44.

Reflective mask blank and reflective mask

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Tokyo, Japan

Keishi Tsukiyama