Fujitsu Corporation

Nitto Chemical Industry Co., Ltd.

Keiko Yano

Takashi Maruyama

Keiji Watanabe

Tomio Nakamura

Shigeru Shimizu

Takashi Saitoh

Yasuhiro Yoneda

Ei Yano

Koichi Kobayashi

Takahisa Namiki

Miwa Igarashi

Hiroyuki Kanata

Tatsuo Chijimatsu

Eiichi Hoshino

Masashi Uzawa

Masami Ishikawa

Yoko Kuramitsu

Masafumi Nakaishi

Kotaro Shirabe

In the production of semiconductor devices, a pattern-wise exposed resist coating is developed with a developer to form a resist pattern corresponding to the pattern of exposure radiation on an article to be fabricated. The development being carried out with a developer consisting of one or more organic solvents, in at least two stages and in each stage of the development, the development is interrupted when a substantial permeation of the developer of a surface portion of the pattern-forming area of the resist pattern in which the resist pattern remains is completed, and the developed resist coating is dried between this stage and the following development stages. The development of the exposed resist coating is carried out by using a developing apparatus which comprises at least one set of developer-supplying system and rinsing solution-supplying system, and a conveyor means for guiding the article carrying the resist coating.

Resist developing apparatus used in process for production of

An electroconductive pattern is formed by coating a substrate with a solution comprising 100 parts by weight of a soluble electroconductive polymer containing an organic radical capable of cross-linking with a cross-linking agent, 5 to 1,000 parts by weight of a cross-linking agent, and 100 to 100,000 parts by weight of a solvent; effecting cross-linking of the resultant coated film to obtain a cured electroconductive film having a sheet resistance of 10.sup.10 .OMEGA./.quadrature. or less; forming a pattern as an upper layer on the cured electroconductive layer; and transferring the pattern of the upper layer to the cured electroconductive layer.

Processes for forming resist pattern and for producing semiconductor

A composition for forming a conductivity imparting agent comprising:

Composition for forming conductivity imparting agent and pattern forming

Process for production of semiconductor device and resist developing

A composition for irradiation with an ionizing radiation, characterized by comprising: (a) 0.01 to 30 parts by weight of a soluble aniline polymer which comprises one or both of the repeating units represented by the following general formulae (1) and (2), said repeating units being included at least 80% of the total repeating units, possesses a weight average molecular weight of not less than 10,000, and is solid at room temperature; and (b) 100 parts by weight of a solvent, ##STR1## wherein R.sup.1 to R.sup.4 represent an electron-donating group, Y.sup.1 to Y.sup.4 represent --SO.sub.3 -- or --COO--, and M.sup.1 to M.sup.4 represent a hydrogen ion, an ammonium ion, an a1kyl ammonium ion with 1 to 8 carbon atoms, an aromatic ammonium ion, or a quaternary ion of an aromatic heterocyclic ring.

Ionizing radiation exposure method utilizing water soluble aniline

A composition for forming an electrically conductive layer which is used in patterning of a resist with electric charge beam, which comprises:

Composition for forming an electrically conductive layer to be used in

An electron beam exposure data processing method includes the steps of inputting exposure data relating to a pattern to be written, and determining whether or not the pattern should be subjected to a framing process. The method further includes performing the framing process when it is determined that the pattern should be subjected to the framing process so that the pattern is partitioned into a frame pattern and an inner pattern surrounded by the frame pattern, reducing the inner pattern by a reduction rate to thereby generate a reduced inner pattern, and determining an exposure dose for the frame pattern and an exposure dose for the reduced inner pattern. There are also provided an electron beam exposure method which employs the electron beam exposure data processing method and an apparatus implementing the same.

Electron beam exposure data processing method, electron beam exposure

A pattern-forming method using an electroconductive composition comprising at least one TCNQ complex salt selected from the group consisting of isoquinolinium-TCNQ complex salts, quinolinium-TCNQ complex salts, alkyl pyridinium-TCNQ complex salts, and morpholinium-TCNQ complex salts, a specific polymer, and a solvent are disclosed. This composition gives an electroconductive film having a superior long-term storage stability and electroconductive characteristics. When this electroconductive composition is coated on a resist to form an electroconductive film, and a pattern is formed by an irradiation with charging beams, such as electron beams, an accumulation of charges (charge-up) is prevented and a fine resist pattern in which a misregistration is completely prevented is obtained.

Method of forming pattern by using an electroconductive composition

Growing community of inventors

Kawasaki, Japan

Keiko Yano