Kanegafuchi Kagaku Kogyo Kabushiki Kaisha

Kanegafuchi Chemical Industry Co., Ltd.

Keiko Miki

Yoshihisa Tawada

Hideo Yamagishi

Hitoshi Nishio

Kazunori Tsuge

Akihiko Hiroe

Minori Yamaguchi

Satoru Murakami

Seishiro Mizukami

William A Nevin

Amorphous semiconductor thin film is exposed to an atmosphere of hydrogen radical during or after the formation of thin film, or is subject to light irradiation having a density of not less than 10 W/cm.sup.2 at a wavelength of 300 to 700 nm during the formation of the thin film. The obtained thin film has improved, i.e. small, photo deterioration. The semiconductor device using the above thin film is preferably applied to solar cells or thin film transistors.

Amorphous semiconductor, amorphous semiconductor device using hydrogen

Color sensor having laminated semiconductor layers

An amorphous semiconductor film is prepared by the usual procedure and, then, established by exposing it to sufficient light intermittently to age the same. The degradation of the electrical characteristics of the semiconductor film on prolonged exposure to light is minimized by the above technique. The preferred intermittent light is a pulsed light. The above light treatment may be applied to an individual semiconductor film, a laminated assembly including at least the pin layers, a finished semiconductor device such as a solar cell or a semiconductor device prior to attachment of an electrode.

Method of stabilizing amorphous semiconductors

Growing community of inventors

Kobe, Japan

Keiko Miki