Tokyo Electron Limited

Ckd Corporation

Keiki Ito

Hiroki Endo

Hideki Nagaoka

Tsuyoshi Shimazu

Daisuke Hayashi

Hiroshi Koizumi

Jun Ooyabu

Kenetsu Mizusawa

Masahide Itoh

Jun Hirose

Makoto Hasegawa

Junichi Shimada

Naohiko Okunishi

Tsuyoshi Saito

Taichi Hirano

Takashi Kitazawa

Kazuyuki Miura

Hideaki Amano

Minoru Ito

Hiroki Doi

Takashi Tozawa

Fumihiko Higuchi

Junji Ishibashi

Tatsuya Nakagome

Masaki Nishikawa

Ken Koyanagi

Kunihiro Sato

Tetsujiro Kono

Osamu Katsumata

Kouji Suzuki

Katsunori Naitoh

Provided is a plasma processing apparatus in which an external circuit is electrically connected, via a line, to a predetermined electric member within a processing container thereof, and noises of first and second high frequency waves are attenuated or blocked by a filter provided on the line when the noises enter the line from the electric member toward the external circuit. The filter includes: an air core coil provided at a first stage when viewed from the electric member side; a toroidal coil connected in series with the air core coil; an electroconductive casing configured to accommodate or enclose the air core coil and the toroidal coil; a first condenser electrically connected between a connection point between the air core coil and the toroidal coil and the casing; and a second condenser connected between a terminal of the toroidal coil at the external circuit side and the casing.

Plasma processing apparatus and filter unit

A power supply system includes a high frequency power supply which supplies a high frequency power; a DC power supply which supplies a first negative DC voltage or a second negative DC voltage having an absolute value larger than that of the first DC voltage; and a control unit which performs a power supply control process of repeating a supply and a stop of the supply of the high frequency power alternately; stopping supplies of the first and second DC voltages for a first period, which is a time period from a beginning of the supply of the high frequency power within a period during which the high frequency power is being supplied; supplying the first DC voltage for a second period except the first period within the period; and supplying the second DC voltage for a period during which the supply of the high frequency power is stopped.

Power supply system, plasma processing apparatus and power supply control method

A gas supply unit, for supplying a gas into a processing chamber in which a substrate is processed, includes a plurality of gas supply sources, a mixing line for mixing a plurality of gases supplied from the gas supply sources to make a gaseous mixture, a multiplicity of branch lines for branching the gaseous mixture to be supplied to a multiplicity of places in the processing chamber, and an additional gas supply unit for supplying a specified additional gas to a gaseous mixture flowing in at least one branch line. The gas supply unit also includes pressure gauges and valves for adjusting gas flow rates in the branch lines, respectively, and a pressure ratio controller for controlling that gaseous mixtures branched into the branch lines to have a specified pressure ratio by adjusting opening degrees of the valves based on measurement results obtained by using the pressure gauges.

Gas supply unit, substrate processing apparatus and supply gas setting method

A partial pressure control systemincludes two valveswhich are branched from an operation gas supply pipeand which variably control operation gas, pressure sensorswhich are respectively connected to the each valvesin series and which detect pressure of the operation gas, and a controllerwhich proportionally controls the operation of the valvesbased on detection result of the pressure sensors, thereby relatively controlling pressures Pand Pof the two valves. With this configuration, it is possible to reduce wastefull consumption of the operation gas, and to enhance the responsivity with respect to change of setting and the like.

Flow rate control system and shower plate used for partial pressure control system

Partial pressure control system, flow rate control system and shower plate used for partial pressure control system

Provided is a relative pressure control system has a simple configuration, but enables accurate regulation of a division ratio of an operation gas, and concurrently makes it possible to securely drain the operation gas from an operation gas pipeline in case of emergency. The system includes a plurality of air operated valves of a normally open type that are connected to an operation gas pipeline supplied with an operation gas; pressure sensors that are series connected to the respective air operated valves and that detect output pressures of the respective air operated valves; a controller that controls operation pressures of the respective air operated valves in accordance with the pressures detected by the pressure sensors; and a hard interlock solenoid valve that correlates the plurality of air operated valves to one another so that at least one of the plurality of air operated valves is normally opened. In the configuration, an opening of a specified one of the plurality of air operated valves is regulated, the operation gas is output at a predetermined division ratio.

Relative pressure control system and relative flow control system

A magnetron plasma etching system has a plurality of processing chambers connected to a common transfer chamber. Each processing chamber has a pair of counter electrodes for generating an electric field and a magnet mechanism for generating a magnetic field having an N-S axis crossing the electric field. All magnetic fields are rotated in the same plane. The rotation of the magnetic fields is controlled by a controller. When one of the magnetic fields is rotated, the other magnetic fields are rotated at equal speed such that the directions of N-S axes thereof are parallel and identical to that of the one of the magnetic fields.

Magnetron plasma processing system

Growing community of inventors

Nirasaki, Japan

Keiki Ito